JPS5835970A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5835970A
JPS5835970A JP56135154A JP13515481A JPS5835970A JP S5835970 A JPS5835970 A JP S5835970A JP 56135154 A JP56135154 A JP 56135154A JP 13515481 A JP13515481 A JP 13515481A JP S5835970 A JPS5835970 A JP S5835970A
Authority
JP
Japan
Prior art keywords
region
film
base
layer
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56135154A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0126185B2 (enrdf_load_stackoverflow
Inventor
Osamu Hataishi
畑石 治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56135154A priority Critical patent/JPS5835970A/ja
Publication of JPS5835970A publication Critical patent/JPS5835970A/ja
Publication of JPH0126185B2 publication Critical patent/JPH0126185B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP56135154A 1981-08-28 1981-08-28 半導体装置の製造方法 Granted JPS5835970A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56135154A JPS5835970A (ja) 1981-08-28 1981-08-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56135154A JPS5835970A (ja) 1981-08-28 1981-08-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5835970A true JPS5835970A (ja) 1983-03-02
JPH0126185B2 JPH0126185B2 (enrdf_load_stackoverflow) 1989-05-22

Family

ID=15145074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56135154A Granted JPS5835970A (ja) 1981-08-28 1981-08-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5835970A (enrdf_load_stackoverflow)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419675A (en) * 1977-07-15 1979-02-14 Hitachi Ltd Production of semiconductor devices
JPS559425A (en) * 1978-07-07 1980-01-23 Oki Electric Ind Co Ltd Manufacturing method for semiconductor device
JPS56126961A (en) * 1980-03-03 1981-10-05 Ibm Semiconductor device
JPS56157042A (en) * 1980-05-06 1981-12-04 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419675A (en) * 1977-07-15 1979-02-14 Hitachi Ltd Production of semiconductor devices
JPS559425A (en) * 1978-07-07 1980-01-23 Oki Electric Ind Co Ltd Manufacturing method for semiconductor device
JPS56126961A (en) * 1980-03-03 1981-10-05 Ibm Semiconductor device
JPS56157042A (en) * 1980-05-06 1981-12-04 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0126185B2 (enrdf_load_stackoverflow) 1989-05-22

Similar Documents

Publication Publication Date Title
US4102733A (en) Two and three mask process for IGFET fabrication
JPH0228902B2 (enrdf_load_stackoverflow)
JPH0628266B2 (ja) 半導体装置の製造方法
US4210993A (en) Method for fabricating a field effect transistor
JPS58175846A (ja) 半導体装置の製造方法
JPH05206451A (ja) Mosfetおよびその製造方法
JPH0325972A (ja) 半導体記憶装置とその製造方法
US3967364A (en) Method of manufacturing semiconductor devices
JPS5835970A (ja) 半導体装置の製造方法
JPS5818784B2 (ja) ハンドウタイソシ ノ デンキヨクハイセンコウゾウ
JPS5940571A (ja) 半導体装置
JPH0127589B2 (enrdf_load_stackoverflow)
JP2707536B2 (ja) 半導体装置の製造方法
JPS61225851A (ja) 半導体装置及びその製造方法
JPS603157A (ja) 半導体装置の製造方法
JPH05226466A (ja) 半導体装置の製造方法
JP2621607B2 (ja) 半導体装置の製造方法
JP2890550B2 (ja) 半導体装置の製造方法
JPH1126756A (ja) 半導体装置の製造方法
JPS6117144B2 (enrdf_load_stackoverflow)
JPS613470A (ja) 半導体装置
JPH04162631A (ja) 半導体装置の製造方法
JPH0519810B2 (enrdf_load_stackoverflow)
JPS61147575A (ja) 半導体装置の製造方法
JPS6317558A (ja) 半導体装置の製造方法