JPH01261291A - レーザアニール方法 - Google Patents

レーザアニール方法

Info

Publication number
JPH01261291A
JPH01261291A JP63089299A JP8929988A JPH01261291A JP H01261291 A JPH01261291 A JP H01261291A JP 63089299 A JP63089299 A JP 63089299A JP 8929988 A JP8929988 A JP 8929988A JP H01261291 A JPH01261291 A JP H01261291A
Authority
JP
Japan
Prior art keywords
substrate
orientation
polycrystalline
laser beam
direction perpendicular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63089299A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0569076B2 (enrdf_load_stackoverflow
Inventor
Atsushi Ogura
厚志 小椋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP63089299A priority Critical patent/JPH01261291A/ja
Publication of JPH01261291A publication Critical patent/JPH01261291A/ja
Publication of JPH0569076B2 publication Critical patent/JPH0569076B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP63089299A 1988-04-13 1988-04-13 レーザアニール方法 Granted JPH01261291A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63089299A JPH01261291A (ja) 1988-04-13 1988-04-13 レーザアニール方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63089299A JPH01261291A (ja) 1988-04-13 1988-04-13 レーザアニール方法

Publications (2)

Publication Number Publication Date
JPH01261291A true JPH01261291A (ja) 1989-10-18
JPH0569076B2 JPH0569076B2 (enrdf_load_stackoverflow) 1993-09-30

Family

ID=13966793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63089299A Granted JPH01261291A (ja) 1988-04-13 1988-04-13 レーザアニール方法

Country Status (1)

Country Link
JP (1) JPH01261291A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077235A (en) * 1989-01-24 1991-12-31 Ricoh Comany, Ltd. Method of manufacturing a semiconductor integrated circuit device having SOI structure
JP2003168645A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 半導体薄膜装置、その製造方法及び画像表示装置
SG112888A1 (en) * 2002-08-22 2005-07-28 Sony Corp Method of producing crystalline semiconductor material and method of fabricating semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077235A (en) * 1989-01-24 1991-12-31 Ricoh Comany, Ltd. Method of manufacturing a semiconductor integrated circuit device having SOI structure
JP2003168645A (ja) * 2001-12-03 2003-06-13 Hitachi Ltd 半導体薄膜装置、その製造方法及び画像表示装置
KR100918337B1 (ko) * 2001-12-03 2009-09-22 가부시키가이샤 히타치세이사쿠쇼 반도체 박막 장치, 그 제조 방법 및 화상 표시 장치
SG112888A1 (en) * 2002-08-22 2005-07-28 Sony Corp Method of producing crystalline semiconductor material and method of fabricating semiconductor device

Also Published As

Publication number Publication date
JPH0569076B2 (enrdf_load_stackoverflow) 1993-09-30

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term