JPH01216568A - Mos type semiconductor device - Google Patents

Abstract

PURPOSE:To eliminate an external mounting high resistance element and to reduce the size and cost of a MOS type semiconductor device when an analog circuit is associated in a gate array by realizing the high resistance element with the gate electrode of a basic cell in the array. CONSTITUTION:With P-type polysilicon gate electrodes 101, 102 as gate electrodes P-type MOSFETs 103, 104 are formed, and with N-type polysilicon gate electrodes 105, 106 as gate electrodes N-type MOSFETs 107, 108 are formed. The electrodes 101, 102 are respectively brought into contact with the electrodes 102, 106, thereby forming the basic cell of a gate array. Further, contact holes 109-112 and terminal leads of aluminum 113-116 are respectively formed at the electrodes 101, 102, 105, 106, the terminal leads formed of the aluminums 115, 116 and the holes 111, 112 are connected by aluminum 117, thereby forming a high resistance element by utilizing diode reverse characteristic.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to realizing a high resistance element in a gate array using the gate electrode of a basic cell inside the gate array.

[Conventional technology]

In conventional gate arrays, high resistance elements are not incorporated inside the gate array, and the high resistance elements are connected to the outside of the gate array.

[Problem to be solved by the invention]

Nowadays, there is a remarkable tendency to incorporate not only digital circuits but also analog circuits inside gate arrays, and analog circuits require high-resistance elements. However, in conventional technology, high-resistance elements are Since it is connected to the outside of the device, it has the problem that it cannot be miniaturized.

SUMMARY OF THE INVENTION The present invention was developed in view of the various circumstances described above, and its purpose is to realize a high-resistance element using the gate electrodes of basic cells inside a gate array.

[Means to solve the problem]

The MOS type semiconductor device of the present invention includes: 'a) In a gate array using MOSFETs,
b) P-type MO using P-type polysilicon as the gate electrode material
SFET, and an N-type MOSFET using N-type polysilicon as a gate electrode material, and the P-type MOSFET
C) has a basic cell in which the gate tS of the T and the gate electrode of the N-type MOSFET are in contact with each other; d) and at least one of the P-type MOSFETs is connected to the terminal outlet of the gate electrode of at least one of the N-type MOSFETs and the other of the N-type MOSFETs is provided with a terminal outlet;
It is characterized in that it is connected to the terminal outlet of the gate electrode of the ET.

〔Example〕

As a basic first embodiment of the present invention, a plan view is shown in FIG.
Figure 2 shows an equivalent circuit diagram.

In FIG. 1, 101.
102 is a P-type polysilicon gate electrode; 103.
104 is a P-type M using the above 101 and 102 as the gate electrode.
1 forming an OSFET and indicated by a crosshatch
05.106 is an N-type polysilicon gate electrode, and 1
07.108 forms an N-type MOSFET using 105.106 as the gate electrode. 101 and 105.1 above
A basic cell of a gate array is formed by connecting cells 02 and 106. Furthermore, the above 101.102.
105.106 and 109.110.111. respectively.
112 contact holes and 113.114.115.
116 aluminum to provide a terminal outlet, and
By connecting the terminal outlet formed by 15, 111, 112 and 116 with aluminum 117, a high resistance element is realized using the diode reverse characteristics, as shown in the equivalent circuit diagram in Figure 2. can.

As a basic second embodiment of the present invention, a plan view is shown in FIG.
Figure 4 shows an equivalent circuit diagram.

Basically, the structure of the basic cell is the same as that of the first embodiment, and the terminal outlet formed by 109 and 113, 110 and 114 in FIG. 1 is replaced by 118 as shown in FIG.
By connecting with aluminum, a high resistance element can be realized as shown in the equivalent circuit diagram of FIG.

Although the basic embodiments have been described above, the wood material of the present invention is a high-resistance element that utilizes the reverse characteristics of a diode formed of polysilicon by applying the above-mentioned basic cell to a gate array. Various high resistance elements can be realized by changing the aluminum wiring 107 in FIG. 1 or the aluminum wiring 108 in FIG. The same thing can be said about polysilicon used for wiring as well, by applying polysilicon in which P-type polysilicon and N-type polysilicon are in contact.

〔Effect of the invention〕

As described above, according to the present invention, a high resistance element can be realized by the gate electrode of the basic cell inside the gate array, so when incorporating an analog circuit inside the gate array, an external high resistance element is not required. It is possible to downsize and reduce costs, and since the gate electrode of the basic cell is used, aluminum wiring can be easily done, and various high-resistance elements can be realized by simply changing the aluminum wiring.
This has the effect that there is no increase in chip area.

[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a plan view showing a basic first embodiment of the present invention, FIG. 2 is an equivalent circuit diagram showing the basic first embodiment of the present invention, FIG. 3 is a plan view showing a second basic embodiment of the invention, and FIG. 4 is an equivalent circuit diagram showing the second basic embodiment of the invention. 101.102...P-type polysilicon gate as pole (diagonal hatch part) 103.104...P-type MOSFET105.106
...N-type polysilicon gate electrode (crosshatch part) 107.108...N-type MOSFET109.110
．． 111.112 ・・・Contact hole 113.114.115.116 ・・・Aluminum 107・・・・・・Aluminum 108・・・・・・Cars made of aluminum or higher Figure 11

Claims (1)

[Claims] (1) a) Insulated gate field effect transistor (hereinafter MO
b) P-type MO using P-type polysilicon as the gate electrode material
SFET, and an N-type MOSFET using N-type polysilicon as a gate electrode material, and the P-type MOSFET
c) has a basic cell in which the gate electrode of the T-type MOSFET and the gate electrode of the N-type MOSFET are in contact with each other; a terminal outlet for the gate electrode of at least one of the P-type MOSFETs and a terminal outlet for the gate electrode of the other P-type MOSFET;
The terminal outlet of the gate electrode of T is connected, or
A terminal outlet of the gate electrode of at least one of the N-type MOSFETs is connected to a terminal outlet of the gate electrode of the other N-type MOSFET.
OS type semiconductor device.