JPH01166536A - Mos type semiconductor device - Google Patents

Abstract

PURPOSE:To realize a diode element with the gate electrode of a basic cell of a gate array of a semiconductor integrated circuit by providing terminal leading port at the gate electrodes of P- and N-type MOSFETs in contact with one another. CONSTITUTION:The P-type polysilicon gate electrode 101 of a P-type MOSFET 102 is brought into contact with the N-type polysilicon gate electrode 103 of an N-type MOSFET 104, thereby forming the basic cell of the gate array of a semiconductor integrated circuit. Further, contact holes 105 and terminal leading ports 106 made of aluminum are formed at the electrodes 101, 103. Thus, since the gate electrodes 101, 103 are surrounded by an insulator, a pure diode element having no parasitic diode is realized, and it is effective to associate an analog circuit in the gate array.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an MO8 type semiconductor device, and particularly to the realization of a diode element in a gate electrode of a basic cell of a gate array of a semiconductor integrated circuit.

[Conventional technology]

No conventional basic cell of a gate array of a semiconductor integrated circuit incorporates a pure diode element without a parasitic diode. In addition, most of the basic cells of gate arrays of conventional semiconductor integrated circuits are P-type MO3? whose gate electrodes are made of polysilicon with the same polarity as the gate electrode material. ET and N type M''
It was composed of osFFXT.

[Problem that the invention seeks to solve]

Today, in gate arrays of semiconductor integrated circuits, there is a remarkable tendency to incorporate analog circuits inside the gate array, and in addition, diode elements have become essential in most of the analog circuits. There is an increasing need to incorporate By extension, the basic cells inside the gate array)? If it is possible to realize a diode element using 4 as a pole,
Since the gate electrode is surrounded by an insulator, it can be used purely as a diode element without problems such as parasitic diodes.

However, the P-type M stone 5 uses polysilisine of the same polarity as the gate electrode material of the conventional gate electrode described above.
IFI! In a basic cell of a gate array of a semiconductor integrated circuit, which is constituted by tT and N-type M10,000SvET, a diode element cannot be constituted by the gate electrode.

SUMMARY OF THE INVENTION The present invention was developed in view of the various circumstances described above, and its object is to realize a diode element in a gate electrode of a basic cell of a gate array of a semiconductor integrated circuit.

[Means for solving problems]

The MOS type semiconductor device of the present invention includes α) a gate array of a semiconductor integrated circuit, b) a P-type MO3IFE using P-type polysilicon as a gate electrode material;
T, and N-type M whose gate electrode material is N-type polysilicon.
5FETs, and the P-type M15IFI! i
C) and in at least one of the basic cells, the gate electrode of the P-type M5IFKT is in contact with the gate electrode of the N-type MO8IFKT; Said N
It is characterized by providing a terminal outlet at the gate electrode of the MO8IFET.

〔Example〕

FIG. 1 shows a plan view of a basic embodiment of an MO8 type semiconductor device of the present invention.

101 indicated by the diagonal hatch is a P-type polysilicon gate electrode, and 1o2 is a P-type M18? with 101 as the gate electrode. ]! form f'l'. Reference numeral 103 indicated by a crosshatch is an N-type polysilicon gate electrode, and reference numeral 104 forms a 0-type MO871T using the above-mentioned 104 as a gate electrode. By touching 101 of 102 and 103 of 104, a basic cell of a gate array of a semiconductor integrated circuit is formed. Furthermore, the above 1
A terminal outlet is provided at 101 of 02 and 103 of 104 by a contact hole 105 and aluminum 106.

As a result, a diode element can be realized using the gate electrode of a basic cell in a gate array of a semiconductor integrated circuit.

The basic embodiments have been explained above, but the same applies not only to the above embodiments but also when the shape of the basic cell is changed.Furthermore, the same applies to polysilicon used for wiring other than gate electrodes. , P-type polysilicon and N
The same thing can be said by applying polysilicon in contact with mold polysilicon and providing a terminal outlet.

〔Effect of the invention〕

The effect of the present invention is that by applying the above-described sophisticated basic cell to a gate array of a semiconductor integrated circuit and providing a terminal outlet in the gate electrode, a diode element can be realized with the gate electrode of the basic cell. As a result, the gate electrode is surrounded by an insulator, so
A pure diode element without any parasitic diodes can be realized, and the diode element becomes effective when incorporating an analog circuit inside a gate array.

[Brief explanation of the drawing]

FIG. 1 is a plan view showing a basic embodiment of the MOB type semiconductor device of the present invention. 101...P-type polysilicon gate electrode (diagonal hatch part) 102...P-type MO8? ET 103...N-type polysilicon gate 'Di pole (
Cross hatch part) 104... N type MO5PET 105... Contact hole 106... Aluminum or above Applicant Seiko Epson Corporation Figure 1

Claims (1)

[Claims] (1) a) In a gate array of a semiconductor integrated circuit, b) P-type M@ with P-type polysilicon as the gate electrode material
O@STET and N-type M@O@SFET using N-type polysilicon as a gate electrode material, and the P-type M
The gate electrode of @O@SFET and the N-type M@O@SF
c) and in at least one of the basic cells, the gate electrode of the P-type M@O@SFET and the N-type M@O@SFET are in contact with each other; An M@O@S type semiconductor device characterized in that a terminal outlet is provided at the gate electrode of an SFET.