JPH0120553B2 - - Google Patents
Info
- Publication number
- JPH0120553B2 JPH0120553B2 JP60035678A JP3567885A JPH0120553B2 JP H0120553 B2 JPH0120553 B2 JP H0120553B2 JP 60035678 A JP60035678 A JP 60035678A JP 3567885 A JP3567885 A JP 3567885A JP H0120553 B2 JPH0120553 B2 JP H0120553B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- floating gate
- information
- control gate
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 239000000969 carrier Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60035678A JPS61194875A (ja) | 1985-02-25 | 1985-02-25 | 情報の再書換え可能な読み出し専用半導体メモリ及びその製造方法 |
| US06/832,580 US4754320A (en) | 1985-02-25 | 1986-02-24 | EEPROM with sidewall control gate |
| EP86102405A EP0193841B1 (en) | 1985-02-25 | 1986-02-25 | Semiconductor device and method of manufacturing the same |
| DE8686102405T DE3679087D1 (de) | 1985-02-25 | 1986-02-25 | Halbleitervorrichtung und verfahren zu seiner herstellung. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60035678A JPS61194875A (ja) | 1985-02-25 | 1985-02-25 | 情報の再書換え可能な読み出し専用半導体メモリ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61194875A JPS61194875A (ja) | 1986-08-29 |
| JPH0120553B2 true JPH0120553B2 (US20100223739A1-20100909-C00025.png) | 1989-04-17 |
Family
ID=12448539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60035678A Granted JPS61194875A (ja) | 1985-02-25 | 1985-02-25 | 情報の再書換え可能な読み出し専用半導体メモリ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61194875A (US20100223739A1-20100909-C00025.png) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910000139B1 (ko) * | 1986-10-27 | 1991-01-21 | 가부시키가이샤 도시바 | 불휘발성 반도체기억장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915381A (US20100223739A1-20100909-C00025.png) * | 1972-05-18 | 1974-02-09 | ||
| JPS5632464B2 (US20100223739A1-20100909-C00025.png) * | 1977-10-03 | 1981-07-28 | ||
| JPS5764965A (en) * | 1980-10-08 | 1982-04-20 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632464U (US20100223739A1-20100909-C00025.png) * | 1979-08-17 | 1981-03-30 |
-
1985
- 1985-02-25 JP JP60035678A patent/JPS61194875A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915381A (US20100223739A1-20100909-C00025.png) * | 1972-05-18 | 1974-02-09 | ||
| JPS5632464B2 (US20100223739A1-20100909-C00025.png) * | 1977-10-03 | 1981-07-28 | ||
| JPS5764965A (en) * | 1980-10-08 | 1982-04-20 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61194875A (ja) | 1986-08-29 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |