JPH0118149B2 - - Google Patents
Info
- Publication number
- JPH0118149B2 JPH0118149B2 JP61252369A JP25236986A JPH0118149B2 JP H0118149 B2 JPH0118149 B2 JP H0118149B2 JP 61252369 A JP61252369 A JP 61252369A JP 25236986 A JP25236986 A JP 25236986A JP H0118149 B2 JPH0118149 B2 JP H0118149B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- gas
- low
- insulating film
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 23
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 15
- 239000012495 reaction gas Substances 0.000 description 15
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25236986A JPS63105970A (ja) | 1986-10-23 | 1986-10-23 | 気相成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25236986A JPS63105970A (ja) | 1986-10-23 | 1986-10-23 | 気相成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63105970A JPS63105970A (ja) | 1988-05-11 |
| JPH0118149B2 true JPH0118149B2 (ko) | 1989-04-04 |
Family
ID=17236342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25236986A Granted JPS63105970A (ja) | 1986-10-23 | 1986-10-23 | 気相成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63105970A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697158A (ja) * | 1991-09-12 | 1994-04-08 | Semiconductor Energy Lab Co Ltd | 光気相反応方法 |
| CN100483651C (zh) | 1992-08-27 | 2009-04-29 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
| JP3065825B2 (ja) | 1992-10-21 | 2000-07-17 | 株式会社半導体エネルギー研究所 | レーザー処理方法 |
| JP3455171B2 (ja) | 2000-08-30 | 2003-10-14 | 宮崎沖電気株式会社 | 真空紫外光ｃｖｄによる層間絶縁膜の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6028235A (ja) * | 1983-07-26 | 1985-02-13 | Nec Corp | 半導体装置の製造方法 |
| JPS61163633A (ja) * | 1985-01-16 | 1986-07-24 | Ushio Inc | 放電灯による表面処理方法 |
| JPS61163634A (ja) * | 1985-01-16 | 1986-07-24 | Ushio Inc | 放電灯による表面処理方法 |
-
1986
- 1986-10-23 JP JP25236986A patent/JPS63105970A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6028235A (ja) * | 1983-07-26 | 1985-02-13 | Nec Corp | 半導体装置の製造方法 |
| JPS61163633A (ja) * | 1985-01-16 | 1986-07-24 | Ushio Inc | 放電灯による表面処理方法 |
| JPS61163634A (ja) * | 1985-01-16 | 1986-07-24 | Ushio Inc | 放電灯による表面処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63105970A (ja) | 1988-05-11 |
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