JPH01179792A - ＧａＡｌＡｓ液相結晶成長方法 - Google Patents

ＧａＡｌＡｓ液相結晶成長方法

Info

Publication number
JPH01179792A
JPH01179792A JP76288A JP76288A JPH01179792A JP H01179792 A JPH01179792 A JP H01179792A JP 76288 A JP76288 A JP 76288A JP 76288 A JP76288 A JP 76288A JP H01179792 A JPH01179792 A JP H01179792A
Authority
JP
Japan
Prior art keywords
crystal
temperature
melt
growth
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP76288A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0477715B2 (enrdf_load_stackoverflow
Inventor
Ko Takahashi
高橋　香
Masaaki Sakata
雅昭 坂田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP76288A priority Critical patent/JPH01179792A/ja
Publication of JPH01179792A publication Critical patent/JPH01179792A/ja
Publication of JPH0477715B2 publication Critical patent/JPH0477715B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP76288A 1988-01-07 1988-01-07 ＧａＡｌＡｓ液相結晶成長方法 Granted JPH01179792A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP76288A JPH01179792A (ja) 1988-01-07 1988-01-07 ＧａＡｌＡｓ液相結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP76288A JPH01179792A (ja) 1988-01-07 1988-01-07 ＧａＡｌＡｓ液相結晶成長方法

Publications (2)

Publication Number Publication Date
JPH01179792A true JPH01179792A (ja) 1989-07-17
JPH0477715B2 JPH0477715B2 (enrdf_load_stackoverflow) 1992-12-09

Family

ID=11482707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP76288A Granted JPH01179792A (ja) 1988-01-07 1988-01-07 ＧａＡｌＡｓ液相結晶成長方法

Country Status (1)

Country Link
JP (1) JPH01179792A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0477715B2 (enrdf_load_stackoverflow) 1992-12-09

Similar Documents

Publication Publication Date Title
US4619718A (en) Method of manufacturing a Group II-VI semiconductor device having a PN junction
US5068516A (en) Device for liquid-phase thin film epitaxy
JPH01179792A (ja) ＧａＡｌＡｓ液相結晶成長方法
JPH01179793A (ja) ＧａＡｌＡｓの液相結晶成長方法
JPH01179794A (ja) ＧａＡｌＡｓの液相の結晶成長方法
JP2714885B2 (ja) 半導体発光素子とその製造方法
JPS6357398B2 (enrdf_load_stackoverflow)
JP2708866B2 (ja) Ｐ型ＺｎＴｅ単結晶の製造方法
JPH01176299A (ja) Ｇａ↓１↓−↓ｘＡｌ↓ｘＡｓの結晶成長方法
JPH0477713B2 (enrdf_load_stackoverflow)
JP2538009B2 (ja) 液相エピキタシャル成長方法
JP2563781B2 (ja) 化合物半導体薄膜の製造方法
JP3551406B2 (ja) 混晶半導体単結晶の成長方法
JPH02141498A (ja) ＩｎＧａＰ結晶の成長方法
JPH0566914B2 (enrdf_load_stackoverflow)
JP3202405B2 (ja) エピタキシャル成長方法
JPH01164792A (ja) 温度差法液相結晶成長の方法
JPH0566916B2 (enrdf_load_stackoverflow)
JPH08333193A (ja) 半導体結晶の製造方法およびその製造装置
JPH0251223A (ja) 液相エピタキシヤル成長方法
JPH01315174A (ja) 半導体発光装置
JPS6021894A (ja) 液相エピタキシヤル成長方法
JPS6034253B2 (ja) 液相エピタキシヤル成長方法
JPS63271982A (ja) 発光素子及びその製造法
JPH04254321A (ja) 液相エピタキシャル成長方法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees