JPH01160900A - 半導体結晶の液相エピタキシャル成長法及び成長装置 - Google Patents

半導体結晶の液相エピタキシャル成長法及び成長装置

Info

Publication number
JPH01160900A
JPH01160900A JP31979287A JP31979287A JPH01160900A JP H01160900 A JPH01160900 A JP H01160900A JP 31979287 A JP31979287 A JP 31979287A JP 31979287 A JP31979287 A JP 31979287A JP H01160900 A JPH01160900 A JP H01160900A
Authority
JP
Japan
Prior art keywords
quartz tube
crystal
growth
epitaxial growth
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP31979287A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0362680B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Takahiro Kanba
神庭 孝浩
Hiroyuki Kato
裕幸 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP31979287A priority Critical patent/JPH01160900A/ja
Publication of JPH01160900A publication Critical patent/JPH01160900A/ja
Publication of JPH0362680B2 publication Critical patent/JPH0362680B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C44/00Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles
    • B29C44/02Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles for articles of definite length, i.e. discrete articles
    • B29C44/12Incorporating or moulding on preformed parts, e.g. inserts or reinforcements
    • B29C44/18Filling preformed cavities
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60RVEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
    • B60R13/00Elements for body-finishing, identifying, or decorating; Arrangements or adaptations for advertising purposes
    • B60R13/08Insulating elements, e.g. for sound insulation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B62LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62DMOTOR VEHICLES; TRAILERS
    • B62D29/00Superstructures, understructures, or sub-units thereof, characterised by the material thereof
    • B62D29/001Superstructures, understructures, or sub-units thereof, characterised by the material thereof characterised by combining metal and synthetic material
    • B62D29/002Superstructures, understructures, or sub-units thereof, characterised by the material thereof characterised by combining metal and synthetic material a foamable synthetic material or metal being added in situ
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • C08J9/0061Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof characterized by the use of several polymeric components
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J9/00Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
    • C08J9/04Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent
    • C08J9/06Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a chemical blowing agent
    • C08J9/10Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a chemical blowing agent developing nitrogen, the blowing agent being a compound containing a nitrogen-to-nitrogen bond
    • C08J9/104Hydrazines; Hydrazides; Semicarbazides; Semicarbazones; Hydrazones; Derivatives thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2363/00Characterised by the use of epoxy resins; Derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2433/00Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Transportation (AREA)
  • Architecture (AREA)
  • Combustion & Propulsion (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • General Chemical & Material Sciences (AREA)
JP31979287A 1987-12-17 1987-12-17 半導体結晶の液相エピタキシャル成長法及び成長装置 Granted JPH01160900A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31979287A JPH01160900A (ja) 1987-12-17 1987-12-17 半導体結晶の液相エピタキシャル成長法及び成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31979287A JPH01160900A (ja) 1987-12-17 1987-12-17 半導体結晶の液相エピタキシャル成長法及び成長装置

Publications (2)

Publication Number Publication Date
JPH01160900A true JPH01160900A (ja) 1989-06-23
JPH0362680B2 JPH0362680B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-09-26

Family

ID=18114233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31979287A Granted JPH01160900A (ja) 1987-12-17 1987-12-17 半導体結晶の液相エピタキシャル成長法及び成長装置

Country Status (1)

Country Link
JP (1) JPH01160900A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPH0362680B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-09-26

Similar Documents

Publication Publication Date Title
US5131975A (en) Controlled growth of semiconductor crystals
TW200307066A (en) CdTe single crystal and cdTe polycrystal, and method for producing the same
JP3109659B2 (ja) 結晶成長方法および装置
JPS6345198A (ja) 多元系結晶の製造方法
US4923561A (en) Crystal growth method
CN110114519B (zh) 磷化铟单结晶体和磷化铟单结晶衬底
JP3087065B1 (ja) 単結晶SiCの液相育成方法
JPH01160900A (ja) 半導体結晶の液相エピタキシャル成長法及び成長装置
US5047112A (en) Method for preparing homogeneous single crystal ternary III-V alloys
JPS60264390A (ja) 単結晶の育成方法
JPS60176995A (ja) 単結晶の製造方法
JPS59102891A (ja) シリコン単結晶の製造方法
JP2003146791A (ja) 化合物半導体単結晶の製造方法
JPH05270995A (ja) カドミウム−テルル系単結晶の製造方法
JP2000095599A (ja) 半導体結晶の作製方法
JP2000191400A (ja) 半導体結晶の作製方法
JPH11180792A (ja) 化合物半導体単結晶の製造方法
JP2003267794A (ja) 結晶成長方法及び結晶成長装置
JPS5930800A (ja) PbTeSe単結晶の液相エピタキシヤル成長方法
JPS58151391A (ja) 半導体結晶製造用アンプル
JPH01249687A (ja) 単結晶の成長方法
JPH0456128A (ja) 2―6族間化合物半導体装置の製造方法
JP2001048700A (ja) 宇宙における結晶成長方法
JPH0712030B2 (ja) ▲ii▼―▲vi▼族化合物半導体結晶成長装置
JPS60195082A (ja) 半導体結晶の製造装置