JPH01160900A - 半導体結晶の液相エピタキシャル成長法及び成長装置 - Google Patents
半導体結晶の液相エピタキシャル成長法及び成長装置Info
- Publication number
- JPH01160900A JPH01160900A JP31979287A JP31979287A JPH01160900A JP H01160900 A JPH01160900 A JP H01160900A JP 31979287 A JP31979287 A JP 31979287A JP 31979287 A JP31979287 A JP 31979287A JP H01160900 A JPH01160900 A JP H01160900A
- Authority
- JP
- Japan
- Prior art keywords
- quartz tube
- crystal
- growth
- epitaxial growth
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C44/00—Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles
- B29C44/02—Shaping by internal pressure generated in the material, e.g. swelling or foaming ; Producing porous or cellular expanded plastics articles for articles of definite length, i.e. discrete articles
- B29C44/12—Incorporating or moulding on preformed parts, e.g. inserts or reinforcements
- B29C44/18—Filling preformed cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R13/00—Elements for body-finishing, identifying, or decorating; Arrangements or adaptations for advertising purposes
- B60R13/08—Insulating elements, e.g. for sound insulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
- B62D—MOTOR VEHICLES; TRAILERS
- B62D29/00—Superstructures, understructures, or sub-units thereof, characterised by the material thereof
- B62D29/001—Superstructures, understructures, or sub-units thereof, characterised by the material thereof characterised by combining metal and synthetic material
- B62D29/002—Superstructures, understructures, or sub-units thereof, characterised by the material thereof characterised by combining metal and synthetic material a foamable synthetic material or metal being added in situ
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/0061—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof characterized by the use of several polymeric components
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/04—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent
- C08J9/06—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a chemical blowing agent
- C08J9/10—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a chemical blowing agent developing nitrogen, the blowing agent being a compound containing a nitrogen-to-nitrogen bond
- C08J9/104—Hydrazines; Hydrazides; Semicarbazides; Semicarbazones; Hydrazones; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2433/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Transportation (AREA)
- Architecture (AREA)
- Combustion & Propulsion (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- General Chemical & Material Sciences (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31979287A JPH01160900A (ja) | 1987-12-17 | 1987-12-17 | 半導体結晶の液相エピタキシャル成長法及び成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31979287A JPH01160900A (ja) | 1987-12-17 | 1987-12-17 | 半導体結晶の液相エピタキシャル成長法及び成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01160900A true JPH01160900A (ja) | 1989-06-23 |
JPH0362680B2 JPH0362680B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-09-26 |
Family
ID=18114233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31979287A Granted JPH01160900A (ja) | 1987-12-17 | 1987-12-17 | 半導体結晶の液相エピタキシャル成長法及び成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01160900A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1987
- 1987-12-17 JP JP31979287A patent/JPH01160900A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0362680B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5131975A (en) | Controlled growth of semiconductor crystals | |
TW200307066A (en) | CdTe single crystal and cdTe polycrystal, and method for producing the same | |
JP3109659B2 (ja) | 結晶成長方法および装置 | |
JPS6345198A (ja) | 多元系結晶の製造方法 | |
US4923561A (en) | Crystal growth method | |
CN110114519B (zh) | 磷化铟单结晶体和磷化铟单结晶衬底 | |
JP3087065B1 (ja) | 単結晶SiCの液相育成方法 | |
JPH01160900A (ja) | 半導体結晶の液相エピタキシャル成長法及び成長装置 | |
US5047112A (en) | Method for preparing homogeneous single crystal ternary III-V alloys | |
JPS60264390A (ja) | 単結晶の育成方法 | |
JPS60176995A (ja) | 単結晶の製造方法 | |
JPS59102891A (ja) | シリコン単結晶の製造方法 | |
JP2003146791A (ja) | 化合物半導体単結晶の製造方法 | |
JPH05270995A (ja) | カドミウム−テルル系単結晶の製造方法 | |
JP2000095599A (ja) | 半導体結晶の作製方法 | |
JP2000191400A (ja) | 半導体結晶の作製方法 | |
JPH11180792A (ja) | 化合物半導体単結晶の製造方法 | |
JP2003267794A (ja) | 結晶成長方法及び結晶成長装置 | |
JPS5930800A (ja) | PbTeSe単結晶の液相エピタキシヤル成長方法 | |
JPS58151391A (ja) | 半導体結晶製造用アンプル | |
JPH01249687A (ja) | 単結晶の成長方法 | |
JPH0456128A (ja) | 2―6族間化合物半導体装置の製造方法 | |
JP2001048700A (ja) | 宇宙における結晶成長方法 | |
JPH0712030B2 (ja) | ▲ii▼―▲vi▼族化合物半導体結晶成長装置 | |
JPS60195082A (ja) | 半導体結晶の製造装置 |