JPH0362680B2 - - Google Patents

Info

Publication number
JPH0362680B2
JPH0362680B2 JP31979287A JP31979287A JPH0362680B2 JP H0362680 B2 JPH0362680 B2 JP H0362680B2 JP 31979287 A JP31979287 A JP 31979287A JP 31979287 A JP31979287 A JP 31979287A JP H0362680 B2 JPH0362680 B2 JP H0362680B2
Authority
JP
Japan
Prior art keywords
crystal
quartz tube
growth
melt
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP31979287A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01160900A (ja
Inventor
Takahiro Kanba
Hiroyuki Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP31979287A priority Critical patent/JPH01160900A/ja
Publication of JPH01160900A publication Critical patent/JPH01160900A/ja
Publication of JPH0362680B2 publication Critical patent/JPH0362680B2/ja
Granted legal-status Critical Current

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Transportation (AREA)
  • Architecture (AREA)
  • Combustion & Propulsion (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • General Chemical & Material Sciences (AREA)
JP31979287A 1987-12-17 1987-12-17 半導体結晶の液相エピタキシャル成長法及び成長装置 Granted JPH01160900A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31979287A JPH01160900A (ja) 1987-12-17 1987-12-17 半導体結晶の液相エピタキシャル成長法及び成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31979287A JPH01160900A (ja) 1987-12-17 1987-12-17 半導体結晶の液相エピタキシャル成長法及び成長装置

Publications (2)

Publication Number Publication Date
JPH01160900A JPH01160900A (ja) 1989-06-23
JPH0362680B2 true JPH0362680B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-09-26

Family

ID=18114233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31979287A Granted JPH01160900A (ja) 1987-12-17 1987-12-17 半導体結晶の液相エピタキシャル成長法及び成長装置

Country Status (1)

Country Link
JP (1) JPH01160900A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPH01160900A (ja) 1989-06-23

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