JPH0115153B2 - - Google Patents

Info

Publication number
JPH0115153B2
JPH0115153B2 JP56146866A JP14686681A JPH0115153B2 JP H0115153 B2 JPH0115153 B2 JP H0115153B2 JP 56146866 A JP56146866 A JP 56146866A JP 14686681 A JP14686681 A JP 14686681A JP H0115153 B2 JPH0115153 B2 JP H0115153B2
Authority
JP
Japan
Prior art keywords
aluminum
circuit
copper
foil
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56146866A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5848432A (ja
Inventor
Shinichiro Asai
Kazuo Kato
Tatsuo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP56146866A priority Critical patent/JPS5848432A/ja
Publication of JPS5848432A publication Critical patent/JPS5848432A/ja
Publication of JPH0115153B2 publication Critical patent/JPH0115153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/484—Connecting portions
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/85424—Aluminium (Al) as principal constituent
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Wire Bonding (AREA)
JP56146866A 1981-09-17 1981-09-17 混成集積回路の製法 Granted JPS5848432A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56146866A JPS5848432A (ja) 1981-09-17 1981-09-17 混成集積回路の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56146866A JPS5848432A (ja) 1981-09-17 1981-09-17 混成集積回路の製法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62079790A Division JPS62271442A (ja) 1987-04-02 1987-04-02 混成集積回路

Publications (2)

Publication Number Publication Date
JPS5848432A JPS5848432A (ja) 1983-03-22
JPH0115153B2 true JPH0115153B2 (enrdf_load_stackoverflow) 1989-03-15

Family

ID=15417333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56146866A Granted JPS5848432A (ja) 1981-09-17 1981-09-17 混成集積回路の製法

Country Status (1)

Country Link
JP (1) JPS5848432A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140730U (enrdf_load_stackoverflow) * 1986-02-28 1987-09-05
JPS62271442A (ja) * 1987-04-02 1987-11-25 Denki Kagaku Kogyo Kk 混成集積回路
JPS63250164A (ja) * 1987-04-07 1988-10-18 Denki Kagaku Kogyo Kk ハイパワ−用混成集積回路基板とその集積回路
JPH0783163B2 (ja) * 1987-05-15 1995-09-06 キヤノン株式会社 素子配線電極及びその製造方法
JP2564487B2 (ja) * 1987-06-02 1996-12-18 電気化学工業株式会社 回路基板及びその混成集積回路
JP2608980B2 (ja) * 1990-09-11 1997-05-14 電気化学工業株式会社 金属板ベース多層回路基板
MY139405A (en) 1998-09-28 2009-09-30 Ibiden Co Ltd Printed circuit board and method for its production

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635038B2 (enrdf_load_stackoverflow) * 1972-12-11 1981-08-14
JPS5716516B2 (enrdf_load_stackoverflow) * 1974-03-29 1982-04-05
JPS5128662A (en) * 1974-09-02 1976-03-11 Sanyo Electric Co Riidosaisen no kochakuhoho
JPS5143571A (ja) * 1974-10-09 1976-04-14 Hiroki Katsuki Keesuisosochi
JPS52378A (en) * 1975-06-23 1977-01-05 Oki Electric Ind Co Ltd Method of forming printed wiring
JPS523461A (en) * 1975-06-25 1977-01-11 Kazutami Saito Measuring, detecting and alarming device of land subsidence under a bu ilding
JPS5259855A (en) * 1975-11-13 1977-05-17 Matsushita Electric Works Ltd Method of producing multiilayer printed circuit substrate
JPS5317747A (en) * 1976-08-02 1978-02-18 Sasaki Mooru Kk Natural light inlet tube
JPS5591896A (en) * 1978-12-28 1980-07-11 Fuji Electric Co Ltd Circuit board
JPS5662388A (en) * 1979-10-26 1981-05-28 Tokyo Shibaura Electric Co Hybrid integrated circuit board

Also Published As

Publication number Publication date
JPS5848432A (ja) 1983-03-22

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