JPH0114715B2 - - Google Patents
Info
- Publication number
- JPH0114715B2 JPH0114715B2 JP59013477A JP1347784A JPH0114715B2 JP H0114715 B2 JPH0114715 B2 JP H0114715B2 JP 59013477 A JP59013477 A JP 59013477A JP 1347784 A JP1347784 A JP 1347784A JP H0114715 B2 JPH0114715 B2 JP H0114715B2
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- film
- electrode
- layer
- lsi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 239000010953 base metal Substances 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/81—Containers; Mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59013477A JPS60160186A (ja) | 1984-01-30 | 1984-01-30 | 超電導集積回路の端子電極 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59013477A JPS60160186A (ja) | 1984-01-30 | 1984-01-30 | 超電導集積回路の端子電極 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60160186A JPS60160186A (ja) | 1985-08-21 |
| JPH0114715B2 true JPH0114715B2 (enrdf_load_stackoverflow) | 1989-03-14 |
Family
ID=11834201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59013477A Granted JPS60160186A (ja) | 1984-01-30 | 1984-01-30 | 超電導集積回路の端子電極 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60160186A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5843520A (en) * | 1997-01-13 | 1998-12-01 | Vanguard International Semiconductor Corporation | Substrate clamp design for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers |
| CN111969102B (zh) * | 2020-09-11 | 2023-10-27 | 中国科学院紫金山天文台 | 一种改善超导钛-铌薄膜接触电极的制备方法 |
-
1984
- 1984-01-30 JP JP59013477A patent/JPS60160186A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60160186A (ja) | 1985-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4360142A (en) | Method of forming a solder interconnection capable of sustained high power levels between a semiconductor device and a supporting substrate | |
| US3461357A (en) | Multilevel terminal metallurgy for semiconductor devices | |
| US4290079A (en) | Improved solder interconnection between a semiconductor device and a supporting substrate | |
| JPH0199242A (ja) | 超伝導体相互接続を有する半導体デバイス | |
| CA1142264A (en) | Contact technique for electrical circuitry | |
| US3290565A (en) | Glass enclosed, passivated semiconductor with contact means of alternate layers of chromium, silver and chromium | |
| JPH0158875B2 (enrdf_load_stackoverflow) | ||
| KR100863388B1 (ko) | 전자 소자 및 그 제조방법 | |
| JPH0114715B2 (enrdf_load_stackoverflow) | ||
| JPS59107586A (ja) | 超伝導フリツプチツプボンデイング方法 | |
| JPS6260836B2 (enrdf_load_stackoverflow) | ||
| JPS5936425B2 (ja) | 中間層を有するリ−ドフレ−ム構造 | |
| CA1153128A (en) | Electrical circuit assemblies | |
| JPH09252026A (ja) | 超伝導装置 | |
| JPS5897880A (ja) | 超電導薄膜機能素子の接続端子用突起電極 | |
| US5227361A (en) | Oxide superconducting lead for interconnecting device component with a semiconductor substrate via at least one buffer layer | |
| JPS5897881A (ja) | 超電導薄膜機能素子の接続端子用突起電極 | |
| JPH0334236B2 (enrdf_load_stackoverflow) | ||
| JPS61181136A (ja) | ダイボンデイング方法 | |
| JPS58147085A (ja) | ジヨセフソン集積装置 | |
| JP2604470B2 (ja) | 半導体装置 | |
| JPS5873136A (ja) | 半導体デバイスの製造方法 | |
| JPS5877266A (ja) | 超電導薄膜機能素子の接続端子用突起電極とその製造方法 | |
| JPH04236469A (ja) | 超伝導集積回路実装用半田バンプ形成方法 | |
| JP2742686B2 (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |