JPH01142453U - - Google Patents
Info
- Publication number
- JPH01142453U JPH01142453U JP3739888U JP3739888U JPH01142453U JP H01142453 U JPH01142453 U JP H01142453U JP 3739888 U JP3739888 U JP 3739888U JP 3739888 U JP3739888 U JP 3739888U JP H01142453 U JPH01142453 U JP H01142453U
- Authority
- JP
- Japan
- Prior art keywords
- target
- substrate
- vacuum container
- insulated
- power source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図はこの考案の一実施例を示す概略構成図
、第２図Ａ，Ｂ，Ｃは第１図の実施例の動作説明
図、第３図は基板のバイアス電圧対膜形成速度の
特性図、第４図Ａ，Ｂ，Ｃはこの考案の装置を用
いて形成された基板の金属組織を示す顕微鏡写真
、第５図は従来例の概略構成図である。
１…チヤンバ、２…ターゲツト、３…基板ホル
ダ、４…基板、５…シヤツタ、７…高周波電源、
８…絶縁物、９…直流電源、１０…シヤツタ可動
棒。
Figure 1 is a schematic configuration diagram showing an embodiment of this invention, Figures 2A, B, and C are explanatory diagrams of the operation of the embodiment of Figure 1, and Figure 3 is the characteristic of substrate bias voltage versus film formation rate. 4A, B, and C are micrographs showing the metallographic structure of a substrate formed using the apparatus of this invention, and FIG. 5 is a schematic diagram of a conventional example. 1...Chamber, 2...Target, 3...Substrate holder, 4...Substrate, 5...Shutter, 7...High frequency power supply,
8...Insulator, 9...DC power supply, 10...Shutter movable rod.
Claims (1)
物質を有するターゲツトと、このターゲツトと対
向して設けられ、真空容器から絶縁されて設けら
れた基板と、この基板とターゲツトとの間に回動
自在かつ上下動自在に配設され、基板あるいはタ
ーゲツトに不要物質が付着しないように上下動さ
せるとともにスパツタ時には回動されるシヤツタ
と、ターゲツトと真空容器間に接続される高周波
電源および基板に負極側が接続され、真空容器に
正極側が接続される直流電源とを備えたスパツタ
リング装置。 A target having a vapor deposition substance provided in a vacuum container and insulated from the container, a substrate provided opposite to this target and insulated from the vacuum container, and a rotary structure between the substrate and the target. A shutter is arranged to be freely movable up and down, and is moved up and down to prevent unwanted substances from adhering to the substrate or target, and is also rotated during sputtering, a high frequency power source connected between the target and the vacuum container, and a negative electrode connected to the substrate. A sputtering device that is connected to a DC power source and has a positive electrode side connected to a vacuum container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3739888U JPH01142453U (en) | 1988-03-22 | 1988-03-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3739888U JPH01142453U (en) | 1988-03-22 | 1988-03-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01142453U true JPH01142453U (en) | 1989-09-29 |
Family
ID=31263979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3739888U Pending JPH01142453U (en) | 1988-03-22 | 1988-03-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01142453U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002356769A (en) * | 2001-05-30 | 2002-12-13 | Matsushita Electric Ind Co Ltd | Method and apparatus for plasma treatment |
-
1988
- 1988-03-22 JP JP3739888U patent/JPH01142453U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002356769A (en) * | 2001-05-30 | 2002-12-13 | Matsushita Electric Ind Co Ltd | Method and apparatus for plasma treatment |