JPH01140677A - Manufacture of thin film solar cell - Google Patents
Manufacture of thin film solar cellInfo
- Publication number
- JPH01140677A JPH01140677A JP62300555A JP30055587A JPH01140677A JP H01140677 A JPH01140677 A JP H01140677A JP 62300555 A JP62300555 A JP 62300555A JP 30055587 A JP30055587 A JP 30055587A JP H01140677 A JPH01140677 A JP H01140677A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous semiconductor
- laser beam
- solar cell
- thin film
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000004020 conductor Substances 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 238000002425 crystallisation Methods 0.000 abstract description 2
- 230000008025 crystallization Effects 0.000 abstract description 2
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は薄膜太陽電池に関し、特に直列接続型太陽電
池の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to thin film solar cells, and particularly to a method for manufacturing series-connected solar cells.
［従来の技術］
近年非晶質シリコン等の薄膜太陽電池を大量に製造する
場合の製造方式として、レーザースクライブを用いて形
成される直列接続型太陽電池の開発が盛んに行われてい
る。第２図は例えば特開昭５９−２２０９７９号公報に
示された従来の薄膜太陽電池を示す断面図である０図に
示すように透明ガラスを用いた透光性絶縁基板（１）の
上には５ｎ０２からなる透明な第１電ｆ４ｉ層（２）が
形成され、第１電極層（２）の上にはＰＩＮ接合を有す
るアモルファスシリコン等のアモルファス半導体からな
る光半導体層（３）が形成されている。さらに薄膜状光
半導体層（３）の上には前記光半導体層（３）とオーミ
ック接触する第２ＴＬ極層（４）が形成されている。こ
の第２電極層（４）はアルミニウム等のオーミック層と
チタニウム等の導電加工層とで構成されている。このよ
うな直列接続型太陽電池はまず透光性絶縁基板（１）上
全面に透明な第１電極層を被着したのち第１電極層の所
定の位置にレーザービームを照射して隣接間隔部Ｌｌｊ
−除去し第１ＴＬ極層（２）を分離形成する８次に第１
電極層（２）の表面を含んで絶縁基板（１）上全面にＰ
ＩＮ接合を含むアモルファスシリコン光半導体層（３）
を被着したのち、アモルファスシリコン光半導体層上の
所定の位置にレーザービームを照射して隣接間隔部Ｌ２
を除去し個別の光半導体層（３）を分離形成する０次に
第１電極層の露出部及び光半導体層の各表面を含んで絶
縁基板（１）上全面に第２電極層（４）を被着したのち
、第２電１ｆｌＦＪ上の所定の位置にレーザービームを
照射して隣接間隔部Ｌ３を除去し、個別の第２ｉ！極層
（４）を分離形成する。その結果各光電変換領域（５ａ
）、（５ｂ）、（５Ｃ）が電気的に直列接続される。[Prior Art] In recent years, series-connected solar cells formed using laser scribing have been actively developed as a manufacturing method for manufacturing thin-film solar cells made of amorphous silicon or the like in large quantities. Figure 2 is a cross-sectional view showing a conventional thin film solar cell disclosed in, for example, Japanese Patent Application Laid-Open No. 59-220979. A transparent first electrode layer (2) made of 5n02 is formed, and an optical semiconductor layer (3) made of an amorphous semiconductor such as amorphous silicon having a PIN junction is formed on the first electrode layer (2). ing. Further, a second TL pole layer (4) is formed on the thin-film optical semiconductor layer (3) and is in ohmic contact with the optical semiconductor layer (3). This second electrode layer (4) is composed of an ohmic layer made of aluminum or the like and a conductive layer made of titanium or the like. Such series-connected solar cells are manufactured by first depositing a transparent first electrode layer on the entire surface of a transparent insulating substrate (1), and then irradiating a laser beam onto a predetermined position of the first electrode layer to separate adjacent spaces. Llj
- removing and separating the first TL pole layer (2);
P is applied to the entire surface of the insulating substrate (1) including the surface of the electrode layer (2).
Amorphous silicon optical semiconductor layer including IN junction (3)
After depositing the amorphous silicon photosemiconductor layer, a laser beam is irradiated to a predetermined position on the amorphous silicon photosemiconductor layer to form an adjacent space L2.
A second electrode layer (4) is formed over the entire surface of the insulating substrate (1), including the exposed portion of the first electrode layer and each surface of the optical semiconductor layer. is deposited, a laser beam is irradiated to a predetermined position on the second electrode 1flFJ to remove the adjacent spacing portion L3, and the individual 2i-th! A polar layer (4) is formed separately. As a result, each photoelectric conversion area (5a
), (5b), and (5C) are electrically connected in series.
［発明が解決しようとする問題点］
太陽電池の光発電効率を左右する要因の１つは、光発電
領域間の漏れ電流の有無及びその大小であり、太陽電池
の発電効率を向上させるためには漏れ電流を小さくする
必要がある。しかしながら上記のようにレーザービーム
加工により製造された太陽電池は、製造の最終工程にお
いてレーザービームが照射されたアモルファスシリコン
光半導体層の加工面（３０）がレーザービームの熱影響
によって多結晶化または微結晶化する。アモルファスシ
リコンが熱影響によって結晶化するとその結晶の電気伝
導度は、もとのアモルファスシリコンの電気伝導度に比
べて約１００００倍も高いため、第１電極（２）と第２
電極（４）の間で上記加工面（３０）の結晶下層を通っ
て漏れ電流が流れ光電変換効率を低下させる原因になる
という問題点があった。[Problems to be Solved by the Invention] One of the factors that influences the photovoltaic efficiency of solar cells is the presence or absence of leakage current between photovoltaic regions and its magnitude. It is necessary to reduce leakage current. However, in the solar cell manufactured by laser beam processing as described above, the processed surface (30) of the amorphous silicon photosemiconductor layer irradiated with the laser beam becomes polycrystalline or microcrystalline due to the thermal influence of the laser beam in the final manufacturing process. crystallize. When amorphous silicon crystallizes under the influence of heat, the electrical conductivity of the crystal is about 10,000 times higher than that of the original amorphous silicon.
There is a problem in that a leakage current flows between the electrodes (4) through the lower crystal layer of the processed surface (30), causing a decrease in photoelectric conversion efficiency.
−ご
この発明は上記のような問題点を解消するためになされ
たものでレーザービーム加工によるアモルファス半導体
の結晶化を防止する太陽電池の製造方法を提供すること
を目的としている。- This invention was made to solve the above-mentioned problems, and its object is to provide a method for manufacturing a solar cell that prevents crystallization of an amorphous semiconductor due to laser beam processing.
［問題点を解決するための手段］
この発明に係る薄膜太陽電池の製造方法においては、ア
モルファス半導体のレーザービーム加工部を加工後に急
冷するようにしている。[Means for Solving the Problems] In the method for manufacturing a thin film solar cell according to the present invention, the laser beam processed portion of the amorphous semiconductor is rapidly cooled after processing.
［作用］
この発明における薄膜太陽電池の製造方法は、最終工程
におけるアモルファスシリコンのレーザービーム加工部
を加工後に急冷するようにしたのでレーザービームの熱
影響によって溶融したアモルファス半導体が結晶化する
ことなく、凝固後もアモルファス状態を維持する。[Function] In the method for manufacturing a thin film solar cell according to the present invention, the laser beam processed portion of the amorphous silicon in the final step is rapidly cooled after processing, so that the amorphous semiconductor melted by the thermal influence of the laser beam does not crystallize. Remains amorphous even after solidification.
［発明の実施例］ 以下、この発明の一実施例を図にもとづいて説明する。[Embodiments of the invention] Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図に示すようにこの発明の一実施例に係る太陽電池
においては厚さ１〜３ ｍｍのガラス板からなる透光性
の絶縁基板（１１）の上には厚さ６０００Ａの５ｎ０２
からなる透明？４極（１２）が形成され、その上にはさ
らにＰＩＮ接合を有するアモルファスシリコンの半導体
層（１３）が形成される。前記半導体、ＩＩ （１３）
上には前記半導体層（１３）とオーミック接触するアル
ミニウムからなる裏面型１ｆＩ（１４）が形成される。As shown in FIG. 1, in a solar cell according to an embodiment of the present invention, a 5N02 film with a thickness of 6000 A is placed on a transparent insulating substrate (11) made of a glass plate with a thickness of 1 to 3 mm.
Transparent consisting of? A quadrupole (12) is formed, and an amorphous silicon semiconductor layer (13) having a PIN junction is further formed thereon. The semiconductor, II (13)
A back-type 1fI (14) made of aluminum and in ohmic contact with the semiconductor layer (13) is formed thereon.
この発明による薄膜太陽電池の製造方法について以下に
説明する。絶縁基板（１１）上全面に熱ＣＶＤ法により
透明型ｔｆＩ（１２）として厚さ６０００ＡのＳｎＯ２
膜を成膜する。その後、波長１．０６μｍのＮｄ ：
ＹＡＧレーザーを用い前記の５ｎ０２膜を７ 、５ ＋
ｗ間隔にスクライブし複数の透明型ｆｆｉ （１２）に
分割した。スクライブ幅（Ｌｌｌ）は５０μｍである０
次に透明電極（１２）の表面を含んで絶縁基板（１１）
上全面にＰＩＮ接合を有するアモルファスシリコン半導
体膜を多室分離型プラズマＣＶＤ装置を用いてＰＭ、
ＩＷｌ、 Ｎ層の順に成膜する。その後、波長０．５３
μｍＬ：Ｉ）Ｎｄ ： ＹＡＧレーザーの第２高調波
を用い前記のアモルファスシリコン膜の所定の位置をス
クライブし複数のアモルファス半導体層（１３）に分割
する。スクライブ幅（Ｌ１２）は１００μｍである０次
に透明電極（１２）の露出部およびアモルファス半導体
層（１３）の各表面を含む絶縁基板（１１）上全面にス
パッタ装置によってアルミニウム膜を成膜し裏面電極（
１４）を形成する。裏面電極（１４）はその後、波長１
．０６μｍのＮｄ ： ＹＡＧレーザ−ビームを前記の
裏面型ｆｆｉ （１４）上に照射して、所定の位置の裏
面電極（１４）および裏面電極（１４）直下のアモルフ
ァス半導体層（１３）の一部を蒸発除去すると共に、レ
ーザービーム加工後直ちに加工部（１３０）をフロン１
１３や液体窒素等の冷媒によって急冷する。A method for manufacturing a thin film solar cell according to the present invention will be described below. SnO2 with a thickness of 6000A is deposited on the entire surface of the insulating substrate (11) as a transparent tfI (12) by thermal CVD.
Deposit a film. After that, Nd with a wavelength of 1.06 μm:
Using a YAG laser, the 5n02 film was 7,5+
It was scribed at w intervals and divided into a plurality of transparent ffi (12). The scribe width (Lll) is 50 μm.
Next, the insulating substrate (11) including the surface of the transparent electrode (12)
An amorphous silicon semiconductor film having a PIN junction on the entire upper surface is PM-treated using a multi-chamber separation type plasma CVD equipment.
The IWl and N layers are deposited in this order. After that, wavelength 0.53
μmL:I)Nd: Using the second harmonic of a YAG laser, the amorphous silicon film is scribed at a predetermined position and divided into a plurality of amorphous semiconductor layers (13). The scribe width (L12) is 100 μm. An aluminum film is deposited on the entire surface of the insulating substrate (11), including the exposed portion of the zero-order transparent electrode (12) and each surface of the amorphous semiconductor layer (13), using a sputtering device. electrode(
14). The back electrode (14) then
．． A 0.6 μm Nd:YAG laser beam is irradiated onto the back surface type ffi (14) to remove the back electrode (14) at a predetermined position and a part of the amorphous semiconductor layer (13) directly under the back electrode (14). In addition to evaporation removal, immediately after laser beam processing, the processing area (130) is
13 or liquid nitrogen.
レーザースクライブ幅（Ｌ１３）は５０μｍである。前
記のレーザースクライブによって裏面ｔ ｆｆｉ （１
４）は複数に分割され、各光電変換領域（１５ａ）、（
１５ｂ）、（１５ｃ）が電気的に直列接続された薄膜太
陽電池が得られる。前記太陽電池のアモルファス半導体
層（１３）のレーザービーム加工部（１３０）は、レー
ザービーム照射時にアモルファスシリコンの一部が溶融
状態となるが、加工後にレーザーラマン分光分析を用い
て調べたところ、アモルファス状を呈しており、加工部
（１３０）の電気伝導度は１０−９〜１Ｏ−ＩＱｓ／ｃ
ａｎであり高抵抗に保持されていた。The laser scribe width (L13) is 50 μm. The back surface t ffi (1
4) is divided into a plurality of parts, and each photoelectric conversion area (15a), (
A thin film solar cell in which 15b) and 15c are electrically connected in series is obtained. In the laser beam processed portion (130) of the amorphous semiconductor layer (13) of the solar cell, part of the amorphous silicon becomes molten during laser beam irradiation, but when examined using laser Raman spectroscopy after processing, it was found that the amorphous silicon The electrical conductivity of the processed portion (130) is 10-9 to 1O-IQs/c.
an, and was maintained at a high resistance.
なお上記実施例では、透光性の絶縁基板（１１）上に透
明電極（１２）、アモルファス半導体（１３）、裏面電
極（１４）の順に形成された薄膜太陽電池について述べ
たが、各構成要素の形成順序を変えた場合、例えば絶縁
基板上に裏面’を極、アモルファス半導体、透明電極の
順に形成される薄膜太陽電池に対しても、この発明にお
ける製造方法を適用することができる。またアモルファ
ス半導体としてアモルファスシリコン半導体を用いる場
合に限らず他の半導体を用いる場合にもこの発明を適用
することができる。In the above example, a thin film solar cell was described in which a transparent electrode (12), an amorphous semiconductor (13), and a back electrode (14) were formed in this order on a transparent insulating substrate (11). When the order of formation is changed, for example, the manufacturing method of the present invention can also be applied to a thin film solar cell in which a pole is formed on the back surface, an amorphous semiconductor, and a transparent electrode are formed in this order on an insulating substrate. Further, the present invention can be applied not only to the case where an amorphous silicon semiconductor is used as the amorphous semiconductor but also to the case where other semiconductors are used.
［発明の効果］
以上のようにこの発明によればレーザービーム加工の最
終工程においてアモルファス半導体層の加工部を加工後
、直ちに急冷しアモルファス半導体が熱影響によって多
結晶または微結晶に変化するのを防止するようにしたの
で、アモルファス半導体のレーザービーム加工面を高抵
抗に保持することかで゛きる。その結果透明電極と裏面
電極の間の漏れ電流がほとんどない高性能の薄膜太陽電
池を製造することが可能になる。[Effects of the Invention] As described above, according to the present invention, in the final step of laser beam processing, the processed portion of the amorphous semiconductor layer is rapidly cooled immediately after processing to prevent the amorphous semiconductor from changing into polycrystals or microcrystals due to thermal effects. Since this is prevented, it is possible to maintain a high resistance on the laser beam processed surface of the amorphous semiconductor. As a result, it becomes possible to manufacture a high-performance thin-film solar cell with almost no leakage current between the transparent electrode and the back electrode.
第１図は、この発明の実施例による薄膜太陽型Ｂ’ｌ、
の製造方法によって製作された直列接続型太陽電池の断
面図、第２図は従来法によって製造された直列接続型太
陽電池の断面図である。図において（１１）は絶縁基板
、（１２）は透明電極、（１３）はアモルファス半導体
層、（１４）は裏面電極、（１３０）はアモルファス半
導体の加工部である。
代理人 大 岩 ｆｉｌｌ 雄
第ｕ図
１４： ｐｈ電抄
手続補正書（自発）FIG. 1 shows a thin film solar type B'l according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a series-connected solar cell manufactured by the conventional method. In the figure, (11) is an insulating substrate, (12) is a transparent electrode, (13) is an amorphous semiconductor layer, (14) is a back electrode, and (130) is a processed portion of the amorphous semiconductor. Agent Oiwa Fill Yu Figure U14: PH Densho Procedures Amendment (Spontaneous)
Claims (1)
導体膜をレーザービームによって順次分割し、電気的に
直列接続された複数の光電変換領域を形成する工程と、 レーザービームによる加工後、上記アモルファス半導体
膜の加工面を急冷させる工程と を備えていることを特徴とする薄膜太陽電池の製造方法
。(1) A step of sequentially dividing a conductor and an amorphous semiconductor film formed on an insulating substrate with a laser beam to form a plurality of photoelectric conversion regions electrically connected in series; and after processing with the laser beam, the amorphous semiconductor A method for producing a thin film solar cell, comprising the step of rapidly cooling a processed surface of the film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62300555A JPH01140677A (en) | 1987-11-26 | 1987-11-26 | Manufacture of thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62300555A JPH01140677A (en) | 1987-11-26 | 1987-11-26 | Manufacture of thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01140677A true JPH01140677A (en) | 1989-06-01 |
Family
ID=17886241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62300555A Pending JPH01140677A (en) | 1987-11-26 | 1987-11-26 | Manufacture of thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01140677A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274446A (en) * | 2000-03-23 | 2001-10-05 | Kanegafuchi Chem Ind Co Ltd | Method of manufacturing integrated hybrid thin film solar battery |
| DE112009005060T5 (en) | 2009-07-10 | 2012-07-12 | Mitsubishi Electric Corp. | Laser processing method and laser processing apparatus |
-
1987
- 1987-11-26 JP JP62300555A patent/JPH01140677A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274446A (en) * | 2000-03-23 | 2001-10-05 | Kanegafuchi Chem Ind Co Ltd | Method of manufacturing integrated hybrid thin film solar battery |
| DE112009005060T5 (en) | 2009-07-10 | 2012-07-12 | Mitsubishi Electric Corp. | Laser processing method and laser processing apparatus |
| CN102470481B (en) * | 2009-07-10 | 2015-04-29 | 三菱电机株式会社 | Laser processing method and apparatus |
| DE112009005060B4 (en) | 2009-07-10 | 2017-10-19 | Mitsubishi Electric Corp. | Laser processing method and laser processing apparatus |
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