JPH01133345A - 半導体集積回路及びその製造方法 - Google Patents
半導体集積回路及びその製造方法Info
- Publication number
- JPH01133345A JPH01133345A JP29240787A JP29240787A JPH01133345A JP H01133345 A JPH01133345 A JP H01133345A JP 29240787 A JP29240787 A JP 29240787A JP 29240787 A JP29240787 A JP 29240787A JP H01133345 A JPH01133345 A JP H01133345A
- Authority
- JP
- Japan
- Prior art keywords
- region
- lower electrode
- conductivity type
- forming
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims abstract description 25
- 238000002955 isolation Methods 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 29
- 239000003990 capacitor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 22
- 238000010438 heat treatment Methods 0.000 abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052796 boron Inorganic materials 0.000 abstract description 6
- 230000003321 amplification Effects 0.000 abstract description 3
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 3
- 238000005121 nitriding Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29240787A JPH01133345A (ja) | 1987-11-19 | 1987-11-19 | 半導体集積回路及びその製造方法 |
| KR1019880015179A KR910009784B1 (ko) | 1987-11-17 | 1988-11-17 | 반도체집적회로의제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29240787A JPH01133345A (ja) | 1987-11-19 | 1987-11-19 | 半導体集積回路及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01133345A true JPH01133345A (ja) | 1989-05-25 |
| JPH0583192B2 JPH0583192B2 (enExample) | 1993-11-25 |
Family
ID=17781384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29240787A Granted JPH01133345A (ja) | 1987-11-17 | 1987-11-19 | 半導体集積回路及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01133345A (enExample) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54109388A (en) * | 1978-02-15 | 1979-08-27 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
| JPS621259A (ja) * | 1985-06-26 | 1987-01-07 | Sharp Corp | 半導体抵抗素子の形成方法 |
-
1987
- 1987-11-19 JP JP29240787A patent/JPH01133345A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54109388A (en) * | 1978-02-15 | 1979-08-27 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
| JPS621259A (ja) * | 1985-06-26 | 1987-01-07 | Sharp Corp | 半導体抵抗素子の形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0583192B2 (enExample) | 1993-11-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |