JPH01122997A - ＧａＡｓフイルムの分子ビームエピタキシャル成長法 - Google Patents

ＧａＡｓフイルムの分子ビームエピタキシャル成長法

Info

Publication number
JPH01122997A
JPH01122997A JP63245853A JP24585388A JPH01122997A JP H01122997 A JPH01122997 A JP H01122997A JP 63245853 A JP63245853 A JP 63245853A JP 24585388 A JP24585388 A JP 24585388A JP H01122997 A JPH01122997 A JP H01122997A
Authority
JP
Japan
Prior art keywords
gaas
substrate
growth
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63245853A
Other languages
English (en)
Japanese (ja)
Inventor
Markus Pessa
マルクス　ペッサ
Harry Asonen
ハリー　アソネン
Jukka Varrio
ユッカ　バリオ
Arto Salokatve
アルト　サロカトベ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Oyj
Original Assignee
Nokia Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Oyj filed Critical Nokia Oyj
Publication of JPH01122997A publication Critical patent/JPH01122997A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/035—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP63245853A 1987-09-29 1988-09-29 ＧａＡｓフイルムの分子ビームエピタキシャル成長法 Pending JPH01122997A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI874260A FI81926C (fi) 1987-09-29 1987-09-29 Foerfarande foer uppbyggning av gaas-filmer pao si- och gaas-substrater.
FI874260 1987-09-29

Publications (1)

Publication Number Publication Date
JPH01122997A true JPH01122997A (ja) 1989-05-16

Family

ID=8525143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63245853A Pending JPH01122997A (ja) 1987-09-29 1988-09-29 ＧａＡｓフイルムの分子ビームエピタキシャル成長法

Country Status (6)

Country Link
US (1) US4876218A (enExample)
JP (1) JPH01122997A (enExample)
DE (1) DE3832902A1 (enExample)
FI (1) FI81926C (enExample)
FR (1) FR2621171B1 (enExample)
GB (1) GB2210502B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02305437A (ja) * 1989-05-19 1990-12-19 Mitsubishi Electric Corp 半導体装置の製造方法

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US5183779A (en) * 1991-05-03 1993-02-02 The United States Of America As Represented By The Secretary Of The Navy Method for doping GaAs with high vapor pressure elements
US5170226A (en) * 1991-05-17 1992-12-08 International Business Machines Corporation Fabrication of quantum devices in compound semiconductor layers and resulting structures
US6001669A (en) * 1991-09-09 1999-12-14 Philips Electronics North America Corporation Method for producing II-VI compound semiconductor epitaxial layers having low defects
US5356509A (en) * 1992-10-16 1994-10-18 Astropower, Inc. Hetero-epitaxial growth of non-lattice matched semiconductors
JP2576766B2 (ja) * 1993-07-08 1997-01-29 日本電気株式会社 半導体基板の製造方法
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JP3272532B2 (ja) * 1993-12-27 2002-04-08 富士通株式会社 半導体装置の製造方法
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CN102618922A (zh) * 2012-04-06 2012-08-01 中国科学院合肥物质科学研究院 一种在Si基片上外延生长GaAs薄膜的方法
CN103147038B (zh) * 2012-12-19 2014-10-29 常州星海电子有限公司 一种制备GaAs薄膜材料的方法
US9368670B2 (en) 2014-04-21 2016-06-14 University Of Oregon GaAs thin films and methods of making and using the same
CN105632965B (zh) * 2016-03-24 2018-05-08 中国科学院上海微系统与信息技术研究所 GaAs分子束外延生长过程中As原子最高结合率的测量方法
CN113739949B (zh) * 2021-09-06 2024-11-08 中国工程物理研究院激光聚变研究中心 一种基于多层量子阱结构的深低温温度传感器及其制备方法

Citations (1)

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JPS62219614A (ja) * 1986-03-20 1987-09-26 Oki Electric Ind Co Ltd 化合物半導体の成長方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02305437A (ja) * 1989-05-19 1990-12-19 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2621171B1 (fr) 1994-03-04
FI874260A0 (fi) 1987-09-29
FI874260A7 (fi) 1989-03-30
FI81926B (fi) 1990-08-31
GB8822689D0 (en) 1988-11-02
GB2210502A (en) 1989-06-07
US4876218A (en) 1989-10-24
FR2621171A1 (fr) 1989-03-31
FI81926C (fi) 1990-12-10
DE3832902A1 (de) 1989-04-13
DE3832902C2 (enExample) 1991-10-24
GB2210502B (en) 1990-08-29

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