JPH01116442A - 半導体イオンセンサ - Google Patents
半導体イオンセンサInfo
- Publication number
- JPH01116442A JPH01116442A JP62273246A JP27324687A JPH01116442A JP H01116442 A JPH01116442 A JP H01116442A JP 62273246 A JP62273246 A JP 62273246A JP 27324687 A JP27324687 A JP 27324687A JP H01116442 A JPH01116442 A JP H01116442A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- ion
- isfet
- solution
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract 4
- 239000000758 substrate Substances 0.000 claims abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 239000010703 silicon Substances 0.000 claims abstract 2
- 150000002500 ions Chemical class 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 230000005669 field effect Effects 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 2
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62273246A JPH01116442A (ja) | 1987-10-30 | 1987-10-30 | 半導体イオンセンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62273246A JPH01116442A (ja) | 1987-10-30 | 1987-10-30 | 半導体イオンセンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01116442A true JPH01116442A (ja) | 1989-05-09 |
| JPH059741B2 JPH059741B2 (enExample) | 1993-02-05 |
Family
ID=17525160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62273246A Granted JPH01116442A (ja) | 1987-10-30 | 1987-10-30 | 半導体イオンセンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01116442A (enExample) |
-
1987
- 1987-10-30 JP JP62273246A patent/JPH01116442A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH059741B2 (enExample) | 1993-02-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080205 Year of fee payment: 15 |