JPH0110927Y2 - - Google Patents
Info
- Publication number
- JPH0110927Y2 JPH0110927Y2 JP3469082U JP3469082U JPH0110927Y2 JP H0110927 Y2 JPH0110927 Y2 JP H0110927Y2 JP 3469082 U JP3469082 U JP 3469082U JP 3469082 U JP3469082 U JP 3469082U JP H0110927 Y2 JPH0110927 Y2 JP H0110927Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafer holder
- wafers
- cassette carrier
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 73
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3469082U JPS58138334U (ja) | 1982-03-12 | 1982-03-12 | ウエハ自動給材機構 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3469082U JPS58138334U (ja) | 1982-03-12 | 1982-03-12 | ウエハ自動給材機構 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58138334U JPS58138334U (ja) | 1983-09-17 |
JPH0110927Y2 true JPH0110927Y2 (en, 2012) | 1989-03-29 |
Family
ID=30046179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3469082U Granted JPS58138334U (ja) | 1982-03-12 | 1982-03-12 | ウエハ自動給材機構 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58138334U (en, 2012) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0630342B2 (ja) * | 1984-12-25 | 1994-04-20 | 富士通株式会社 | 縦型炉 |
JPH0539624Y2 (en, 2012) * | 1985-01-18 | 1993-10-07 |
-
1982
- 1982-03-12 JP JP3469082U patent/JPS58138334U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58138334U (ja) | 1983-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5445491A (en) | Method for multichamber sheet-after-sheet type treatment | |
KR100698352B1 (ko) | 기판처리장치 및 기판처리방법 | |
US4282825A (en) | Surface treatment device | |
TWI719534B (zh) | 基板對準方法、基板對準裝置、基板處理方法、及基板處理裝置 | |
JP3926890B2 (ja) | 処理システム | |
JP4342745B2 (ja) | 基板処理方法および半導体装置の製造方法 | |
JPH0110927Y2 (en, 2012) | ||
JPH0536597A (ja) | 処理方法 | |
JP2679158B2 (ja) | 半導体装置の製造装置 | |
JP2003037147A (ja) | 基板搬送装置及び熱処理方法 | |
JPH0870033A (ja) | 半導体製造装置のウェーハ移載機 | |
JP3710979B2 (ja) | 基板処理装置 | |
JP5031960B2 (ja) | 基板処理装置および半導体装置の製造方法 | |
JP3130630B2 (ja) | 処理装置 | |
JP2003142552A (ja) | 基板処理装置 | |
JP4283973B2 (ja) | 基板処理装置および半導体装置の製造方法 | |
JPS5980927A (ja) | エピタキシヤル成長装置 | |
JPH09181060A (ja) | 薄膜成膜装置 | |
JPS6220347A (ja) | 処理装置 | |
JP4224192B2 (ja) | 半導体装置の製造方法 | |
JP2650445B2 (ja) | 薄膜形成装置 | |
JPH1041368A (ja) | 基板搬送装置 | |
CN120530476A (zh) | 基片运送方法、基片处理装置和程序 | |
JPS58220423A (ja) | 半導体基板の連続熱処理方法および装置 | |
JPH0423434A (ja) | 半導体ウェファの熱処理装置 |