JPH01107557A - 配線の形成方法 - Google Patents
配線の形成方法Info
- Publication number
- JPH01107557A JPH01107557A JP62263721A JP26372187A JPH01107557A JP H01107557 A JPH01107557 A JP H01107557A JP 62263721 A JP62263721 A JP 62263721A JP 26372187 A JP26372187 A JP 26372187A JP H01107557 A JPH01107557 A JP H01107557A
- Authority
- JP
- Japan
- Prior art keywords
- film
- hole
- deposited
- target
- molybdenum silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62263721A JPH01107557A (ja) | 1987-10-21 | 1987-10-21 | 配線の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62263721A JPH01107557A (ja) | 1987-10-21 | 1987-10-21 | 配線の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01107557A true JPH01107557A (ja) | 1989-04-25 |
| JPH0552057B2 JPH0552057B2 (enExample) | 1993-08-04 |
Family
ID=17393386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62263721A Granted JPH01107557A (ja) | 1987-10-21 | 1987-10-21 | 配線の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01107557A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6119883A (en) * | 1998-12-07 | 2000-09-19 | Owens-Illinois Closure Inc. | Tamper-indicating closure and method of manufacture |
| US6152316A (en) * | 1999-05-17 | 2000-11-28 | Owens-Illinois Closure Inc. | Tamper-indicating closure and method of manufacture |
| US6382443B1 (en) | 1999-04-28 | 2002-05-07 | Owens-Illinois Closure Inc. | Tamper-indicating closure with lugs on a stop flange for spacing the flange from the finish of a container |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60189241A (ja) * | 1984-03-08 | 1985-09-26 | Agency Of Ind Science & Technol | 段差の被覆方法 |
| JPS60193336A (ja) * | 1984-03-15 | 1985-10-01 | Nec Corp | コンタクト電極の形成方法 |
-
1987
- 1987-10-21 JP JP62263721A patent/JPH01107557A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60189241A (ja) * | 1984-03-08 | 1985-09-26 | Agency Of Ind Science & Technol | 段差の被覆方法 |
| JPS60193336A (ja) * | 1984-03-15 | 1985-10-01 | Nec Corp | コンタクト電極の形成方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6119883A (en) * | 1998-12-07 | 2000-09-19 | Owens-Illinois Closure Inc. | Tamper-indicating closure and method of manufacture |
| US6382443B1 (en) | 1999-04-28 | 2002-05-07 | Owens-Illinois Closure Inc. | Tamper-indicating closure with lugs on a stop flange for spacing the flange from the finish of a container |
| US6152316A (en) * | 1999-05-17 | 2000-11-28 | Owens-Illinois Closure Inc. | Tamper-indicating closure and method of manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0552057B2 (enExample) | 1993-08-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3287392B2 (ja) | 半導体装置およびその製造方法 | |
| US5081064A (en) | Method of forming electrical contact between interconnection layers located at different layer levels | |
| JPS6110256A (ja) | 集積回路の接点孔への相互接続線の自動位置決め方法 | |
| JP2959758B2 (ja) | コンタクトホール内の導電性プラグ形成方法 | |
| JP3408463B2 (ja) | 半導体装置の製造方法 | |
| KR900007682B1 (ko) | 반도체기판의 단차부 매립방법 | |
| JPH0552057B2 (enExample) | ||
| US5940730A (en) | Method of forming a contact hole of a semiconductor device | |
| JP3119198B2 (ja) | 半導体装置の製造方法 | |
| JPH01107559A (ja) | 配線の形成方法 | |
| KR100197669B1 (ko) | 반도체 소자의 금속배선 형성방법 | |
| KR100257154B1 (ko) | 반도체 소자의 금속 배선 형성 방법 | |
| KR100260522B1 (ko) | 반도체소자의콘택홀매립방법 | |
| JPH0569294B2 (enExample) | ||
| JPH06236928A (ja) | 半導体装置およびその製造方法 | |
| KR100236095B1 (ko) | 반도체 소자의 금속배선 형성방법 | |
| JPS61179532A (ja) | コンタクト電極の形成方法 | |
| JPS61172327A (ja) | 導体膜の堆積方法 | |
| JP3254763B2 (ja) | 多層配線形成方法 | |
| JP2841457B2 (ja) | アルミニウム膜の形成方法 | |
| JPH03263833A (ja) | テーパエツチング方法 | |
| JPH03108721A (ja) | 配線の形成方法 | |
| JPS61117829A (ja) | コンタクト電極の形成方法 | |
| JPS61120417A (ja) | コンタクト電極の形成方法 | |
| JPS6351659A (ja) | 配線の形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |