JP7853228B2 - ゲートドライバ、絶縁モジュール、低圧回路ユニット、および高圧回路ユニット - Google Patents

ゲートドライバ、絶縁モジュール、低圧回路ユニット、および高圧回路ユニット

Info

Publication number
JP7853228B2
JP7853228B2 JP2022579463A JP2022579463A JP7853228B2 JP 7853228 B2 JP7853228 B2 JP 7853228B2 JP 2022579463 A JP2022579463 A JP 2022579463A JP 2022579463 A JP2022579463 A JP 2022579463A JP 7853228 B2 JP7853228 B2 JP 7853228B2
Authority
JP
Japan
Prior art keywords
voltage
transformer
low
voltage circuit
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022579463A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022168674A1 (https=
Inventor
恵治 和田
文悟 田中
光生 長田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of JPWO2022168674A1 publication Critical patent/JPWO2022168674A1/ja
Application granted granted Critical
Publication of JP7853228B2 publication Critical patent/JP7853228B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00—Fixed transformers or mutual inductances of the signal type
    • H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/468—Circuit boards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00—Fixed transformers or mutual inductances of the signal type
    • H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
    • H01F19/08—Transformers having magnetic bias, e.g. for handling pulses
    • H01F2019/085—Transformer for galvanic isolation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Power Conversion In General (AREA)
JP2022579463A 2021-02-03 2022-01-25 ゲートドライバ、絶縁モジュール、低圧回路ユニット、および高圧回路ユニット Active JP7853228B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021015944 2021-02-03
JP2021015944 2021-02-03
PCT/JP2022/002654 WO2022168674A1 (ja) 2021-02-03 2022-01-25 ゲートドライバ、絶縁モジュール、低圧回路ユニット、および高圧回路ユニット

Publications (2)

Publication Number Publication Date
JPWO2022168674A1 JPWO2022168674A1 (https=) 2022-08-11
JP7853228B2 true JP7853228B2 (ja) 2026-04-28

Family

ID=82741289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022579463A Active JP7853228B2 (ja) 2021-02-03 2022-01-25 ゲートドライバ、絶縁モジュール、低圧回路ユニット、および高圧回路ユニット

Country Status (5)

Country Link
US (2) US12407347B2 (https=)
JP (1) JP7853228B2 (https=)
CN (1) CN116830439A (https=)
DE (1) DE112022000474T5 (https=)
WO (1) WO2022168674A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250266831A1 (en) * 2024-02-15 2025-08-21 Littelfuse, Inc. Isolation device having inductive and capacitive isolation circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002111463A (ja) 2000-10-04 2002-04-12 Nagano Japan Radio Co Ｆｅｔの駆動回路およびスイッチング装置
JP2002320376A (ja) 2001-04-20 2002-10-31 Shindengen Electric Mfg Co Ltd パワースイッチ素子の駆動方法
JP2009232637A (ja) 2008-03-25 2009-10-08 Rohm Co Ltd スイッチ制御装置及びこれを用いたモータ駆動装置
JP2014522561A (ja) 2012-05-29 2014-09-04 富士電機株式会社 アイソレータおよびアイソレータの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6399424U (https=) * 1986-12-19 1988-06-28
JPH02151261A (ja) * 1988-11-29 1990-06-11 Shimadzu Corp パルス幅変調駆動回路
JPH04114232U (ja) * 1991-03-25 1992-10-07 新神戸電機株式会社 絶縁ゲート電圧駆動形半導体素子のゲート駆動回路
JPH04128435U (ja) * 1991-05-16 1992-11-24 三菱電機株式会社 パワーｍｏｓ ｆｅｔ用絶縁形ドライブ回路
JPH06164352A (ja) * 1992-11-18 1994-06-10 Matsushita Electric Works Ltd パルストランス駆動回路
JPH06243982A (ja) * 1993-02-15 1994-09-02 Matsushita Electric Works Ltd 放電灯点灯装置
JPH1169777A (ja) * 1997-08-26 1999-03-09 Matsushita Electric Works Ltd 電源装置
JP5714455B2 (ja) 2011-08-31 2015-05-07 ルネサスエレクトロニクス株式会社 半導体集積回路
US9337905B2 (en) * 2013-07-01 2016-05-10 Texas Instruments Incorporated Inductive structures with reduced emissions and interference
ITUB20156047A1 (it) * 2015-12-01 2017-06-01 St Microelectronics Srl Sistema di isolamento galvanico, apparecchiatura e procedimento
JP7051649B2 (ja) * 2018-09-07 2022-04-11 株式会社東芝 磁気結合装置及び通信システム
US11533027B2 (en) * 2019-10-18 2022-12-20 Analog Devices, Inc. Low power receiver circuit for isolated data communications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002111463A (ja) 2000-10-04 2002-04-12 Nagano Japan Radio Co Ｆｅｔの駆動回路およびスイッチング装置
JP2002320376A (ja) 2001-04-20 2002-10-31 Shindengen Electric Mfg Co Ltd パワースイッチ素子の駆動方法
JP2009232637A (ja) 2008-03-25 2009-10-08 Rohm Co Ltd スイッチ制御装置及びこれを用いたモータ駆動装置
JP2014522561A (ja) 2012-05-29 2014-09-04 富士電機株式会社 アイソレータおよびアイソレータの製造方法

Also Published As

Publication number Publication date
WO2022168674A1 (ja) 2022-08-11
US12407347B2 (en) 2025-09-02
CN116830439A (zh) 2023-09-29
US20250364991A1 (en) 2025-11-27
US20230370064A1 (en) 2023-11-16
JPWO2022168674A1 (https=) 2022-08-11
DE112022000474T5 (de) 2023-11-02

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