CN116830439A - 栅极驱动器、绝缘模块、低压电路单元以及高压电路单元 - Google Patents

栅极驱动器、绝缘模块、低压电路单元以及高压电路单元 Download PDF

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Publication number
CN116830439A
CN116830439A CN202280012524.5A CN202280012524A CN116830439A CN 116830439 A CN116830439 A CN 116830439A CN 202280012524 A CN202280012524 A CN 202280012524A CN 116830439 A CN116830439 A CN 116830439A
Authority
CN
China
Prior art keywords
voltage
voltage circuit
transformer
low
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280012524.5A
Other languages
English (en)
Chinese (zh)
Inventor
和田惠治
田中文悟
长田光生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN116830439A publication Critical patent/CN116830439A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00—Fixed transformers or mutual inductances of the signal type
    • H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/468—Circuit boards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00—Fixed transformers or mutual inductances of the signal type
    • H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
    • H01F19/08—Transformers having magnetic bias, e.g. for handling pulses
    • H01F2019/085—Transformer for galvanic isolation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Power Conversion In General (AREA)
CN202280012524.5A 2021-02-03 2022-01-25 栅极驱动器、绝缘模块、低压电路单元以及高压电路单元 Pending CN116830439A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021015944 2021-02-03
JP2021-015944 2021-02-03
PCT/JP2022/002654 WO2022168674A1 (ja) 2021-02-03 2022-01-25 ゲートドライバ、絶縁モジュール、低圧回路ユニット、および高圧回路ユニット

Publications (1)

Publication Number Publication Date
CN116830439A true CN116830439A (zh) 2023-09-29

Family

ID=82741289

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280012524.5A Pending CN116830439A (zh) 2021-02-03 2022-01-25 栅极驱动器、绝缘模块、低压电路单元以及高压电路单元

Country Status (5)

Country Link
US (2) US12407347B2 (https=)
JP (1) JP7853228B2 (https=)
CN (1) CN116830439A (https=)
DE (1) DE112022000474T5 (https=)
WO (1) WO2022168674A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250266831A1 (en) * 2024-02-15 2025-08-21 Littelfuse, Inc. Isolation device having inductive and capacitive isolation circuit

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6399424U (https=) * 1986-12-19 1988-06-28
JPH02151261A (ja) * 1988-11-29 1990-06-11 Shimadzu Corp パルス幅変調駆動回路
JPH04114232U (ja) * 1991-03-25 1992-10-07 新神戸電機株式会社 絶縁ゲート電圧駆動形半導体素子のゲート駆動回路
JPH04128435U (ja) * 1991-05-16 1992-11-24 三菱電機株式会社 パワーｍｏｓ ｆｅｔ用絶縁形ドライブ回路
JPH06164352A (ja) * 1992-11-18 1994-06-10 Matsushita Electric Works Ltd パルストランス駆動回路
JPH06243982A (ja) * 1993-02-15 1994-09-02 Matsushita Electric Works Ltd 放電灯点灯装置
JPH1169777A (ja) * 1997-08-26 1999-03-09 Matsushita Electric Works Ltd 電源装置
JP2002111463A (ja) * 2000-10-04 2002-04-12 Nagano Japan Radio Co Ｆｅｔの駆動回路およびスイッチング装置
JP2002320376A (ja) * 2001-04-20 2002-10-31 Shindengen Electric Mfg Co Ltd パワースイッチ素子の駆動方法
JP5303167B2 (ja) * 2008-03-25 2013-10-02 ローム株式会社 スイッチ制御装置及びこれを用いたモータ駆動装置
JP5714455B2 (ja) 2011-08-31 2015-05-07 ルネサスエレクトロニクス株式会社 半導体集積回路
WO2013179333A1 (en) * 2012-05-29 2013-12-05 Fuji Electric Co., Ltd. Isolator and isolator manufacturing method
US9337905B2 (en) * 2013-07-01 2016-05-10 Texas Instruments Incorporated Inductive structures with reduced emissions and interference
ITUB20156047A1 (it) * 2015-12-01 2017-06-01 St Microelectronics Srl Sistema di isolamento galvanico, apparecchiatura e procedimento
JP7051649B2 (ja) * 2018-09-07 2022-04-11 株式会社東芝 磁気結合装置及び通信システム
US11533027B2 (en) * 2019-10-18 2022-12-20 Analog Devices, Inc. Low power receiver circuit for isolated data communications

Also Published As

Publication number Publication date
WO2022168674A1 (ja) 2022-08-11
US12407347B2 (en) 2025-09-02
US20250364991A1 (en) 2025-11-27
US20230370064A1 (en) 2023-11-16
JPWO2022168674A1 (https=) 2022-08-11
DE112022000474T5 (de) 2023-11-02
JP7853228B2 (ja) 2026-04-28

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