JP7852860B2 - 面発光レーザ素子の製造方法 - Google Patents

面発光レーザ素子の製造方法

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Publication number
JP7852860B2
JP7852860B2 JP2022085274A JP2022085274A JP7852860B2 JP 7852860 B2 JP7852860 B2 JP 7852860B2 JP 2022085274 A JP2022085274 A JP 2022085274A JP 2022085274 A JP2022085274 A JP 2022085274A JP 7852860 B2 JP7852860 B2 JP 7852860B2
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JP
Japan
Prior art keywords
layer
light
photonic crystal
thickness
emitting laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022085274A
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English (en)
Japanese (ja)
Other versions
JP2023173193A5 (https=
JP2023173193A (ja
Inventor
進 野田
渓 江本
朋朗 小泉
泰司 小谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Kyoto University NUC
Original Assignee
Stanley Electric Co Ltd
Kyoto University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd, Kyoto University NUC filed Critical Stanley Electric Co Ltd
Priority to JP2022085274A priority Critical patent/JP7852860B2/ja
Priority to TW112117343A priority patent/TWI853563B/zh
Priority to US18/196,541 priority patent/US20230387659A1/en
Priority to EP23174040.8A priority patent/EP4283804B1/en
Priority to CN202310572937.5A priority patent/CN117134185A/zh
Publication of JP2023173193A publication Critical patent/JP2023173193A/ja
Publication of JP2023173193A5 publication Critical patent/JP2023173193A5/ja
Application granted granted Critical
Publication of JP7852860B2 publication Critical patent/JP7852860B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2022085274A 2022-05-25 2022-05-25 面発光レーザ素子の製造方法 Active JP7852860B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022085274A JP7852860B2 (ja) 2022-05-25 2022-05-25 面発光レーザ素子の製造方法
TW112117343A TWI853563B (zh) 2022-05-25 2023-05-10 面發光雷射元件的製造方法
US18/196,541 US20230387659A1 (en) 2022-05-25 2023-05-12 Method of manufacturing surface-emitting laser element
EP23174040.8A EP4283804B1 (en) 2022-05-25 2023-05-17 Method of manufacturing a photonic crystal surface-emitting laser element
CN202310572937.5A CN117134185A (zh) 2022-05-25 2023-05-19 面发光激光元件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022085274A JP7852860B2 (ja) 2022-05-25 2022-05-25 面発光レーザ素子の製造方法

Publications (3)

Publication Number Publication Date
JP2023173193A JP2023173193A (ja) 2023-12-07
JP2023173193A5 JP2023173193A5 (https=) 2025-04-21
JP7852860B2 true JP7852860B2 (ja) 2026-04-28

Family

ID=86386940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022085274A Active JP7852860B2 (ja) 2022-05-25 2022-05-25 面発光レーザ素子の製造方法

Country Status (5)

Country Link
US (1) US20230387659A1 (https=)
EP (1) EP4283804B1 (https=)
JP (1) JP7852860B2 (https=)
CN (1) CN117134185A (https=)
TW (1) TWI853563B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7831760B2 (ja) * 2022-02-03 2026-03-17 国立大学法人京都大学 フォトニック結晶面発光レーザ素子
JP2023182186A (ja) * 2022-06-14 2023-12-26 国立大学法人京都大学 面発光レーザ素子
CN118073962B (zh) * 2024-02-27 2025-03-14 中国科学院长春光学精密机械与物理研究所 一种二维光子晶体面发射激光器
WO2025254090A1 (ja) * 2024-06-07 2025-12-11 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子、及び、半導体レーザ素子の製造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029538A1 (ja) 2005-09-02 2007-03-15 Kyoto University ２次元フォトニック結晶面発光レーザ光源
JP2014197659A (ja) 2013-03-04 2014-10-16 国立大学法人京都大学 半導体レーザ素子
JP2015149403A (ja) 2014-02-06 2015-08-20 国立大学法人京都大学 半導体レーザモジュール
WO2016158785A1 (ja) 2015-03-29 2016-10-06 住友化学株式会社 積層基板の測定方法、積層基板および測定装置
JP2017011138A (ja) 2015-06-24 2017-01-12 キヤノン株式会社 面発光レーザ、および面発光レーザ製造方法
US10340659B1 (en) 2018-06-14 2019-07-02 Conary Enterprise Co., Ltd. Electronically pumped surface-emitting photonic crystal laser
JP2019201065A (ja) 2018-05-15 2019-11-21 浜松ホトニクス株式会社 発光デバイス
WO2020045453A1 (ja) 2018-08-27 2020-03-05 浜松ホトニクス株式会社 発光装置
JP2020068330A (ja) 2018-10-25 2020-04-30 浜松ホトニクス株式会社 発光素子及び発光装置
WO2021186965A1 (ja) 2020-03-16 2021-09-23 国立大学法人京都大学 面発光レーザ素子及び面発光レーザ素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5015641B2 (ja) * 2007-03-26 2012-08-29 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
JP4902682B2 (ja) * 2009-03-27 2012-03-21 キヤノン株式会社 窒化物半導体レーザ
CN112272906B (zh) * 2018-06-08 2024-03-15 浜松光子学株式会社 发光元件
US20250226639A1 (en) * 2022-03-24 2025-07-10 Sony Group Corporation Surface emitting laser, surface emitting laser array, and electronic device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029538A1 (ja) 2005-09-02 2007-03-15 Kyoto University ２次元フォトニック結晶面発光レーザ光源
JP2014197659A (ja) 2013-03-04 2014-10-16 国立大学法人京都大学 半導体レーザ素子
JP2015149403A (ja) 2014-02-06 2015-08-20 国立大学法人京都大学 半導体レーザモジュール
WO2016158785A1 (ja) 2015-03-29 2016-10-06 住友化学株式会社 積層基板の測定方法、積層基板および測定装置
JP2017011138A (ja) 2015-06-24 2017-01-12 キヤノン株式会社 面発光レーザ、および面発光レーザ製造方法
JP2019201065A (ja) 2018-05-15 2019-11-21 浜松ホトニクス株式会社 発光デバイス
US10340659B1 (en) 2018-06-14 2019-07-02 Conary Enterprise Co., Ltd. Electronically pumped surface-emitting photonic crystal laser
WO2020045453A1 (ja) 2018-08-27 2020-03-05 浜松ホトニクス株式会社 発光装置
JP2020068330A (ja) 2018-10-25 2020-04-30 浜松ホトニクス株式会社 発光素子及び発光装置
WO2021186965A1 (ja) 2020-03-16 2021-09-23 国立大学法人京都大学 面発光レーザ素子及び面発光レーザ素子の製造方法

Also Published As

Publication number Publication date
TW202401935A (zh) 2024-01-01
US20230387659A1 (en) 2023-11-30
EP4283804A1 (en) 2023-11-29
JP2023173193A (ja) 2023-12-07
EP4283804B1 (en) 2026-01-28
TWI853563B (zh) 2024-08-21
CN117134185A (zh) 2023-11-28

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