JP7829838B2 - 静電チャック - Google Patents

静電チャック

Info

Publication number
JP7829838B2
JP7829838B2 JP2022154960A JP2022154960A JP7829838B2 JP 7829838 B2 JP7829838 B2 JP 7829838B2 JP 2022154960 A JP2022154960 A JP 2022154960A JP 2022154960 A JP2022154960 A JP 2022154960A JP 7829838 B2 JP7829838 B2 JP 7829838B2
Authority
JP
Japan
Prior art keywords
power supply
supply terminals
heater element
zones
annular portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022154960A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023147159A5 (cg-RX-API-DMAC10.html
JP2023147159A (ja
Inventor
瑛人 小野
哲朗 糸山
智樹 梅津
淳平 上藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toto Ltd
Original Assignee
Toto Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toto Ltd filed Critical Toto Ltd
Priority to JP2022154960A priority Critical patent/JP7829838B2/ja
Priority to KR1020230014667A priority patent/KR102716890B1/ko
Priority to US18/121,627 priority patent/US12341050B2/en
Priority to CN202310302696.2A priority patent/CN116895591A/zh
Publication of JP2023147159A publication Critical patent/JP2023147159A/ja
Priority to US19/223,387 priority patent/US20250293071A1/en
Publication of JP2023147159A5 publication Critical patent/JP2023147159A5/ja
Priority to JP2026033413A priority patent/JP2026090573A/ja
Application granted granted Critical
Publication of JP7829838B2 publication Critical patent/JP7829838B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Resistance Heating (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Heating Bodies (AREA)
JP2022154960A 2022-03-29 2022-09-28 静電チャック Active JP7829838B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022154960A JP7829838B2 (ja) 2022-03-29 2022-09-28 静電チャック
KR1020230014667A KR102716890B1 (ko) 2022-03-29 2023-02-03 정전 척
US18/121,627 US12341050B2 (en) 2022-03-29 2023-03-15 Electrostatic chuck
CN202310302696.2A CN116895591A (zh) 2022-03-29 2023-03-27 静电吸盘
US19/223,387 US20250293071A1 (en) 2022-03-29 2025-05-30 Electrostatic chuck
JP2026033413A JP2026090573A (ja) 2022-03-29 2026-03-03 静電チャック

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022053876 2022-03-29
JP2022053876 2022-03-29
JP2022154960A JP7829838B2 (ja) 2022-03-29 2022-09-28 静電チャック

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2026033413A Division JP2026090573A (ja) 2022-03-29 2026-03-03 静電チャック

Publications (3)

Publication Number Publication Date
JP2023147159A JP2023147159A (ja) 2023-10-12
JP2023147159A5 JP2023147159A5 (cg-RX-API-DMAC10.html) 2025-07-22
JP7829838B2 true JP7829838B2 (ja) 2026-03-16

Family

ID=88193581

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022154960A Active JP7829838B2 (ja) 2022-03-29 2022-09-28 静電チャック
JP2026033413A Pending JP2026090573A (ja) 2022-03-29 2026-03-03 静電チャック

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2026033413A Pending JP2026090573A (ja) 2022-03-29 2026-03-03 静電チャック

Country Status (4)

Country Link
US (2) US12341050B2 (cg-RX-API-DMAC10.html)
JP (2) JP7829838B2 (cg-RX-API-DMAC10.html)
KR (1) KR102716890B1 (cg-RX-API-DMAC10.html)
CN (1) CN116895591A (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2026000821A (ja) * 2024-06-18 2026-01-06 Toto株式会社 静電チャック

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003524885A (ja) 1999-09-29 2003-08-19 東京エレクトロン株式会社 多重領域抵抗ヒータ
JP2016526289A (ja) 2013-05-07 2016-09-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック
JP2017163157A (ja) 2014-11-20 2017-09-14 住友大阪セメント株式会社 静電チャック装置
JP2018170501A (ja) 2017-03-29 2018-11-01 Toto株式会社 静電チャック

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2844915B2 (ja) * 1990-11-21 1999-01-13 富士電機株式会社 薄膜形成用基板加熱装置
US11158526B2 (en) 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
JP6219229B2 (ja) 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
US10079165B2 (en) * 2014-05-20 2018-09-18 Applied Materials, Inc. Electrostatic chuck with independent zone cooling and reduced crosstalk
US9786539B2 (en) * 2014-07-16 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd Wafer chuck
CN108475656B (zh) * 2015-12-28 2023-09-05 日本碍子株式会社 圆盘状加热器以及加热器冷却板组件
JP6530333B2 (ja) * 2016-02-29 2019-06-12 日本特殊陶業株式会社 加熱部材及び静電チャック
JP6730861B2 (ja) * 2016-06-22 2020-07-29 日本特殊陶業株式会社 保持装置
JP6762432B2 (ja) * 2018-02-16 2020-09-30 日本特殊陶業株式会社 保持装置
JP6918042B2 (ja) 2019-03-26 2021-08-11 日本碍子株式会社 ウエハ載置装置
JP7411383B2 (ja) * 2019-11-05 2024-01-11 日本特殊陶業株式会社 加熱装置
KR102776505B1 (ko) 2020-07-09 2025-03-07 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003524885A (ja) 1999-09-29 2003-08-19 東京エレクトロン株式会社 多重領域抵抗ヒータ
JP2016526289A (ja) 2013-05-07 2016-09-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック
JP2017163157A (ja) 2014-11-20 2017-09-14 住友大阪セメント株式会社 静電チャック装置
JP2018170501A (ja) 2017-03-29 2018-11-01 Toto株式会社 静電チャック

Also Published As

Publication number Publication date
US12341050B2 (en) 2025-06-24
US20230317495A1 (en) 2023-10-05
US20250293071A1 (en) 2025-09-18
KR20230140356A (ko) 2023-10-06
JP2026090573A (ja) 2026-06-02
CN116895591A (zh) 2023-10-17
KR102716890B1 (ko) 2024-10-16
JP2023147159A (ja) 2023-10-12

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