JP2016526289A - 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック - Google Patents
最小限のクロストークで熱的に分離されたゾーンを有する静電チャック Download PDFInfo
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- 239000012212 insulator Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000000919 ceramic Substances 0.000 claims abstract description 25
- 238000002955 isolation Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 19
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 31
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 14
- 239000002131 composite material Substances 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 239000012530 fluid Substances 0.000 description 8
- 229910052734 helium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 239000001307 helium Substances 0.000 description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 239000011800 void material Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910026551 ZrC Inorganic materials 0.000 description 2
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 2
- -1 acrylic compound Chemical class 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 229910017109 AlON Inorganic materials 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 240000005523 Peganum harmala Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910000946 Y alloy Inorganic materials 0.000 description 1
- CYKMNKXPYXUVPR-UHFFFAOYSA-N [C].[Ti] Chemical compound [C].[Ti] CYKMNKXPYXUVPR-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (15)
- セラミックスパックと、
セラミックスパックの下面に接合された上面を有する熱伝導性ベースであって、
複数の熱ゾーンと、
熱伝導性ベースの上面から熱伝導性ベースの下面に向かって延びる複数の熱絶縁体であって、複数の熱絶縁体の各々は、熱伝導性ベースの上面に複数の熱ゾーンのうちの2つの間である程度の熱的分離を提供する複数の熱絶縁体を含む熱伝導性ベースを含む基板支持アセンブリ。 - 複数の熱絶縁体のうちの少なくとも1つは不連続である、請求項1記載の基板支持アセンブリ。
- 複数の熱絶縁体は、変化する深さを有する、請求項1記載の基板支持アセンブリ。
- 熱伝導性ベースは取付穴を有し、複数の熱絶縁体のうちの取付穴に近接する1以上の熱絶縁体は、複数の熱絶縁体のうちの取付穴に近接していない他の熱絶縁体よりも浅い深さを有する、請求項3記載の基板支持アセンブリ。
- 熱伝導性ベースの側面を被覆する耐プラズマ層を含む、請求項1記載の基板支持アセンブリ。
- 複数の熱ゾーンは4つの熱ゾーンを含み、複数の熱絶縁体は3つの熱絶縁体を含む、請求項1記載の基板支持アセンブリ。
- 複数の熱絶縁体のうちの第1熱絶縁体は、基板支持アセンブリの中心から20〜40mmであり、複数の熱絶縁体のうちの第2熱絶縁体は、基板支持アセンブリの中心から80〜100mmであり、複数の熱絶縁体のうちの第3熱絶縁体は、基板支持アセンブリの中心から120〜140mmである、請求項6記載の基板支持アセンブリ。
- 複数の熱絶縁体は、複数のボイドを含み、複数のボイドは、シリコーンで充填される、真空下にある、又は大気に通気される、請求項1記載の基板支持アセンブリ。
- 複数の熱絶縁体の上に、複数の熱絶縁体の形状にほぼ合致する複数の導電膜を含み、複数の導電膜は、低い熱伝導率を有する、請求項1記載の基板支持アセンブリ。
- 複数の熱ゾーンの各々は、別個の設定点のチラーに結合された少なくとも1つの導管を含む、請求項1記載の基板支持アセンブリ。
- 熱伝導性ベースの下面に機械的に取り付けられたプラスチックプレートと、
プラスチックプレートの下面に機械的に取り付けられたファシリティプレートと、
カソードベースプレートを含み、ファシリティプレートは、ファシリティプレートを貫通してカソードベースプレート内へと延びるボルトを介してカソードベースプレートにボルト締めされる、請求項1記載の基板支持アセンブリ。 - 熱伝導性ベース内に埋め込まれ、第1方向及び第2方向に沿って異なる熱伝導特性を有する熱的管理された材料を含む、請求項1記載の基板支持アセンブリ。
- セラミックスパックは、AlNを含み、約1〜5mmの厚さを有し、約6〜8.4mmのクロストーク長さを有する、請求項1記載の基板支持アセンブリ。
- 静電チャックの製造方法であって、
複数の導管を有する熱伝導性ベースを形成する工程と、
熱導電性ベース内に複数の熱絶縁体を形成する工程であって、複数の熱絶縁体は、熱導電性ベースの上面から熱導電性ベースの下面に向かって延び、複数の絶縁体は、熱導電性ベース内に複数の熱ゾーンを画定し、複数の熱絶縁体の各々は、複数の導管のうちの隣接する導管間にある工程と、
熱伝導性ベースの上面を静電パックに接合する工程を含む方法。 - 複数の熱絶縁体を形成する工程は、複数のボイドを形成し、複数のボイドを有機結合材料で充填する工程を含む、請求項14記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361820596P | 2013-05-07 | 2013-05-07 | |
US61/820,596 | 2013-05-07 | ||
US14/268,994 | 2014-05-02 | ||
US14/268,994 US9666466B2 (en) | 2013-05-07 | 2014-05-02 | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
PCT/US2014/036989 WO2014182711A1 (en) | 2013-05-07 | 2014-05-06 | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017173724A Division JP6470807B2 (ja) | 2013-05-07 | 2017-09-11 | 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック |
Publications (2)
Publication Number | Publication Date |
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JP2016526289A true JP2016526289A (ja) | 2016-09-01 |
JP6890418B2 JP6890418B2 (ja) | 2021-06-18 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2016513019A Active JP6890418B2 (ja) | 2013-05-07 | 2014-05-06 | 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック |
JP2017173724A Active JP6470807B2 (ja) | 2013-05-07 | 2017-09-11 | 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック |
JP2019006489A Pending JP2019083331A (ja) | 2013-05-07 | 2019-01-18 | 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック |
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JP2017173724A Active JP6470807B2 (ja) | 2013-05-07 | 2017-09-11 | 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック |
JP2019006489A Pending JP2019083331A (ja) | 2013-05-07 | 2019-01-18 | 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック |
Country Status (6)
Country | Link |
---|---|
US (4) | US9666466B2 (ja) |
JP (3) | JP6890418B2 (ja) |
KR (3) | KR102295684B1 (ja) |
CN (3) | CN107527842B (ja) |
TW (4) | TWI689039B (ja) |
WO (1) | WO2014182711A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019096650A (ja) * | 2017-11-17 | 2019-06-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2021072386A (ja) * | 2019-10-31 | 2021-05-06 | 京セラ株式会社 | 静電チャック装置 |
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US9708713B2 (en) | 2013-05-24 | 2017-07-18 | Applied Materials, Inc. | Aerosol deposition coating for semiconductor chamber components |
KR101385950B1 (ko) * | 2013-09-16 | 2014-04-16 | 주식회사 펨빅스 | 정전척 및 정전척 제조 방법 |
US9440886B2 (en) | 2013-11-12 | 2016-09-13 | Applied Materials, Inc. | Rare-earth oxide based monolithic chamber material |
US10008404B2 (en) | 2014-10-17 | 2018-06-26 | Applied Materials, Inc. | Electrostatic chuck assembly for high temperature processes |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US10008399B2 (en) | 2015-05-19 | 2018-06-26 | Applied Materials, Inc. | Electrostatic puck assembly with metal bonded backing plate for high temperature processes |
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