KR102716890B1 - 정전 척 - Google Patents

정전 척 Download PDF

Info

Publication number
KR102716890B1
KR102716890B1 KR1020230014667A KR20230014667A KR102716890B1 KR 102716890 B1 KR102716890 B1 KR 102716890B1 KR 1020230014667 A KR1020230014667 A KR 1020230014667A KR 20230014667 A KR20230014667 A KR 20230014667A KR 102716890 B1 KR102716890 B1 KR 102716890B1
Authority
KR
South Korea
Prior art keywords
sub
power supply
zone
zones
heater element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020230014667A
Other languages
English (en)
Korean (ko)
Other versions
KR20230140356A (ko
Inventor
아키히토 오노
테츠로 이토야마
토모키 우메츠
준페이 우에후지
Original Assignee
토토 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 토토 가부시키가이샤 filed Critical 토토 가부시키가이샤
Publication of KR20230140356A publication Critical patent/KR20230140356A/ko
Application granted granted Critical
Publication of KR102716890B1 publication Critical patent/KR102716890B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/67103—
    • H01L21/67109—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Resistance Heating (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Heating Bodies (AREA)
KR1020230014667A 2022-03-29 2023-02-03 정전 척 Active KR102716890B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2022-053876 2022-03-29
JP2022053876 2022-03-29
JP2022154960A JP7829838B2 (ja) 2022-03-29 2022-09-28 静電チャック
JPJP-P-2022-154960 2022-09-28

Publications (2)

Publication Number Publication Date
KR20230140356A KR20230140356A (ko) 2023-10-06
KR102716890B1 true KR102716890B1 (ko) 2024-10-16

Family

ID=88193581

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020230014667A Active KR102716890B1 (ko) 2022-03-29 2023-02-03 정전 척

Country Status (4)

Country Link
US (2) US12341050B2 (cg-RX-API-DMAC10.html)
JP (2) JP7829838B2 (cg-RX-API-DMAC10.html)
KR (1) KR102716890B1 (cg-RX-API-DMAC10.html)
CN (1) CN116895591A (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2026000821A (ja) * 2024-06-18 2026-01-06 Toto株式会社 静電チャック

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160020128A1 (en) 2014-07-16 2016-01-21 Taiwan Semiconductor Manufacturing Co., Ltd Wafer chuck
WO2017115758A1 (ja) 2015-12-28 2017-07-06 日本碍子株式会社 円板状ヒータ及びヒータ冷却板アセンブリ
JP2017157617A (ja) 2016-02-29 2017-09-07 日本特殊陶業株式会社 加熱部材及び静電チャック
JP2017228649A (ja) 2016-06-22 2017-12-28 日本特殊陶業株式会社 保持装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2844915B2 (ja) * 1990-11-21 1999-01-13 富士電機株式会社 薄膜形成用基板加熱装置
JP4505169B2 (ja) 1999-09-29 2010-07-21 東京エレクトロン株式会社 多重領域抵抗ヒータ
US9666466B2 (en) 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US11158526B2 (en) 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
JP6219229B2 (ja) 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
US10079165B2 (en) * 2014-05-20 2018-09-18 Applied Materials, Inc. Electrostatic chuck with independent zone cooling and reduced crosstalk
CN107004626B (zh) 2014-11-20 2019-02-05 住友大阪水泥股份有限公司 静电卡盘装置
JP6341457B1 (ja) 2017-03-29 2018-06-13 Toto株式会社 静電チャック
JP6762432B2 (ja) * 2018-02-16 2020-09-30 日本特殊陶業株式会社 保持装置
JP6918042B2 (ja) 2019-03-26 2021-08-11 日本碍子株式会社 ウエハ載置装置
JP7411383B2 (ja) * 2019-11-05 2024-01-11 日本特殊陶業株式会社 加熱装置
KR102776505B1 (ko) 2020-07-09 2025-03-07 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160020128A1 (en) 2014-07-16 2016-01-21 Taiwan Semiconductor Manufacturing Co., Ltd Wafer chuck
WO2017115758A1 (ja) 2015-12-28 2017-07-06 日本碍子株式会社 円板状ヒータ及びヒータ冷却板アセンブリ
JP2017157617A (ja) 2016-02-29 2017-09-07 日本特殊陶業株式会社 加熱部材及び静電チャック
JP2017228649A (ja) 2016-06-22 2017-12-28 日本特殊陶業株式会社 保持装置

Also Published As

Publication number Publication date
US12341050B2 (en) 2025-06-24
US20230317495A1 (en) 2023-10-05
US20250293071A1 (en) 2025-09-18
KR20230140356A (ko) 2023-10-06
JP7829838B2 (ja) 2026-03-16
JP2026090573A (ja) 2026-06-02
CN116895591A (zh) 2023-10-17
JP2023147159A (ja) 2023-10-12

Similar Documents

Publication Publication Date Title
JP7720024B2 (ja) 静電チャック及び半導体製造装置
JP2016192566A (ja) 静電チャック
JP7183527B2 (ja) 静電チャック及び半導体製造装置
US11776836B2 (en) Electrostatic chuck and semiconductor manufacturing apparatus
US20260027666A1 (en) Electrostatic chuck
JP2023147157A (ja) 静電チャック
TWI787463B (zh) 保持裝置
JP7780131B2 (ja) 静電チャック
US20250293071A1 (en) Electrostatic chuck
JP7672625B2 (ja) 静電チャック及び半導体製造装置
US11756820B2 (en) Electrostatic chuck and semiconductor manufacturing apparatus
JP2025172177A (ja) 静電チャック
JP2024048766A (ja) 静電チャック
US20220102184A1 (en) Electrostatic chuck and semiconductor manufacturing apparatus
JP2022055291A (ja) 静電チャック及び半導体製造装置
KR102806214B1 (ko) 정전 척
JP2024048721A (ja) 静電チャック
JP2026076311A (ja) 静電チャック
JP2026076312A (ja) 静電チャック
KR20220043038A (ko) 정전 척 및 반도체 제조 장치

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000