JP7810142B2 - 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法 - Google Patents

化学増幅ネガ型レジスト組成物及びレジストパターン形成方法

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Publication number
JP7810142B2
JP7810142B2 JP2023057066A JP2023057066A JP7810142B2 JP 7810142 B2 JP7810142 B2 JP 7810142B2 JP 2023057066 A JP2023057066 A JP 2023057066A JP 2023057066 A JP2023057066 A JP 2023057066A JP 7810142 B2 JP7810142 B2 JP 7810142B2
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Prior art keywords
group
carbon atoms
repeating unit
saturated
atom
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JP2023057066A
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English (en)
Japanese (ja)
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JP2024144896A5 (https=
JP2024144896A (ja
Inventor
将大 福島
聡 渡邉
恵一 増永
正晃 小竹
雄太 松澤
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Priority to JP2023057066A priority Critical patent/JP7810142B2/ja
Priority to US18/610,591 priority patent/US20240329522A1/en
Priority to KR1020240040520A priority patent/KR102943535B1/ko
Priority to EP24166719.5A priority patent/EP4443241A3/en
Priority to TW113111370A priority patent/TWI888074B/zh
Priority to CN202410367375.5A priority patent/CN118732395A/zh
Publication of JP2024144896A publication Critical patent/JP2024144896A/ja
Publication of JP2024144896A5 publication Critical patent/JP2024144896A5/ja
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Publication of JP7810142B2 publication Critical patent/JP7810142B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2023057066A 2023-03-31 2023-03-31 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法 Active JP7810142B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2023057066A JP7810142B2 (ja) 2023-03-31 2023-03-31 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法
US18/610,591 US20240329522A1 (en) 2023-03-31 2024-03-20 Chemically amplified negative resist composition and resist pattern forming process
KR1020240040520A KR102943535B1 (ko) 2023-03-31 2024-03-25 화학 증폭 네거티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
TW113111370A TWI888074B (zh) 2023-03-31 2024-03-27 化學增幅負型阻劑組成物及阻劑圖案形成方法
EP24166719.5A EP4443241A3 (en) 2023-03-31 2024-03-27 Chemically amplified negative resist composition and resist pattern forming process
CN202410367375.5A CN118732395A (zh) 2023-03-31 2024-03-28 化学增幅负型抗蚀剂组成物及抗蚀剂图案形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023057066A JP7810142B2 (ja) 2023-03-31 2023-03-31 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法

Publications (3)

Publication Number Publication Date
JP2024144896A JP2024144896A (ja) 2024-10-15
JP2024144896A5 JP2024144896A5 (https=) 2024-12-20
JP7810142B2 true JP7810142B2 (ja) 2026-02-03

Family

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Family Applications (1)

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JP2023057066A Active JP7810142B2 (ja) 2023-03-31 2023-03-31 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法

Country Status (6)

Country Link
US (1) US20240329522A1 (https=)
EP (1) EP4443241A3 (https=)
JP (1) JP7810142B2 (https=)
KR (1) KR102943535B1 (https=)
CN (1) CN118732395A (https=)
TW (1) TWI888074B (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020001770A1 (en) 1998-08-14 2002-01-03 James F. Cameron Photoacid generators and photoresists comprising same
JP2002128758A (ja) 2000-10-23 2002-05-09 Shin Etsu Chem Co Ltd 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法
WO2016121535A1 (ja) 2015-01-27 2016-08-04 富士フイルム株式会社 感放射線性又は感活性光線性組成物、並びに、それを用いた膜、マスクブランクス、レジストパターン形成方法、及び電子デバイスの製造方法
JP2019203103A (ja) 2018-05-25 2019-11-28 信越化学工業株式会社 単量体、ポリマー、ネガ型レジスト組成物、フォトマスクブランク、及びレジストパターン形成方法
JP2019204048A (ja) 2018-05-25 2019-11-28 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234152Y2 (https=) 1985-09-17 1990-09-13
JP3955384B2 (ja) 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
JPH11327143A (ja) 1998-05-13 1999-11-26 Fujitsu Ltd レジスト及びレジストパターンの形成方法
JP3790649B2 (ja) 1999-12-10 2006-06-28 信越化学工業株式会社 レジスト材料
JP4231622B2 (ja) 2000-01-27 2009-03-04 富士フイルム株式会社 ポジ型レジスト組成物
TWI224713B (en) 2000-01-27 2004-12-01 Fuji Photo Film Co Ltd Positive photoresist composition
JP4226803B2 (ja) 2000-08-08 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
EP1179750B1 (en) 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
TWI284779B (en) 2002-06-07 2007-08-01 Fujifilm Corp Photosensitive resin composition
JP4116340B2 (ja) 2002-06-21 2008-07-09 富士フイルム株式会社 感光性樹脂組成物
JP4025162B2 (ja) 2002-09-25 2007-12-19 信越化学工業株式会社 高分子化合物及びポジ型レジスト材料並びにこれを用いたパターン形成方法
JP4396849B2 (ja) 2005-01-21 2010-01-13 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法
JP4478589B2 (ja) 2005-02-02 2010-06-09 富士フイルム株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP4816921B2 (ja) 2005-04-06 2011-11-16 信越化学工業株式会社 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
EP1897869A4 (en) 2005-05-11 2010-05-05 Jsr Corp NOVEL COMPOUND, NOVEL POLYMER, AND NOVEL RADIATION SENSITIVE RESIN COMPOSITION
JP4716037B2 (ja) 2006-04-11 2011-07-06 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜、ケイ素含有膜形成基板及びこれを用いたパターン形成方法
JP2008026500A (ja) 2006-07-20 2008-02-07 Dainippon Printing Co Ltd 高ドライエッチング耐性ポリマー層を付加したフォトマスクブランクスおよびそれを用いたフォトマスクの製造方法
JP4858714B2 (ja) 2006-10-04 2012-01-18 信越化学工業株式会社 高分子化合物、レジスト材料、及びパターン形成方法
KR101116963B1 (ko) 2006-10-04 2012-03-14 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 재료, 및 패턴 형성 방법
JP4784760B2 (ja) 2006-10-20 2011-10-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4355725B2 (ja) 2006-12-25 2009-11-04 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4435196B2 (ja) 2007-03-29 2010-03-17 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP4678383B2 (ja) 2007-03-29 2011-04-27 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
JP4466881B2 (ja) 2007-06-06 2010-05-26 信越化学工業株式会社 フォトマスクブランク、レジストパターンの形成方法、及びフォトマスクの製造方法
JP5201363B2 (ja) 2008-08-28 2013-06-05 信越化学工業株式会社 重合性アニオンを有するスルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法
TWI400226B (zh) 2008-10-17 2013-07-01 Shinetsu Chemical Co 具有聚合性陰離子之鹽及高分子化合物、光阻劑材料及圖案形成方法
JP4813537B2 (ja) 2008-11-07 2011-11-09 信越化学工業株式会社 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
JP5411893B2 (ja) 2011-05-30 2014-02-12 信越化学工業株式会社 スルホニウム塩、高分子化合物、該高分子化合物を用いた化学増幅型レジスト組成物及びレジストパターン形成方法
JP5491450B2 (ja) 2011-05-30 2014-05-14 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料、該化学増幅レジスト材料を用いたパターン形成方法。
JP5812030B2 (ja) 2013-03-13 2015-11-11 信越化学工業株式会社 スルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法
JP6248882B2 (ja) * 2014-09-25 2017-12-20 信越化学工業株式会社 スルホニウム塩、レジスト組成物及びレジストパターン形成方法
US10295904B2 (en) 2016-06-07 2019-05-21 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP6645464B2 (ja) 2017-03-17 2020-02-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7318565B2 (ja) 2020-03-03 2023-08-01 信越化学工業株式会社 反射型マスクブランクの製造方法
JP7838494B2 (ja) * 2023-01-25 2026-04-01 信越化学工業株式会社 オニウム塩、化学増幅ポジ型レジスト組成物及びレジストパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020001770A1 (en) 1998-08-14 2002-01-03 James F. Cameron Photoacid generators and photoresists comprising same
JP2002128758A (ja) 2000-10-23 2002-05-09 Shin Etsu Chem Co Ltd 新規オニウム塩及びレジスト材料用光酸発生剤並びにレジスト材料及びパターン形成方法
WO2016121535A1 (ja) 2015-01-27 2016-08-04 富士フイルム株式会社 感放射線性又は感活性光線性組成物、並びに、それを用いた膜、マスクブランクス、レジストパターン形成方法、及び電子デバイスの製造方法
JP2019203103A (ja) 2018-05-25 2019-11-28 信越化学工業株式会社 単量体、ポリマー、ネガ型レジスト組成物、フォトマスクブランク、及びレジストパターン形成方法
JP2019204048A (ja) 2018-05-25 2019-11-28 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法

Also Published As

Publication number Publication date
CN118732395A (zh) 2024-10-01
TW202448985A (zh) 2024-12-16
US20240329522A1 (en) 2024-10-03
KR102943535B1 (ko) 2026-03-24
TWI888074B (zh) 2025-06-21
EP4443241A3 (en) 2024-11-06
KR20240147531A (ko) 2024-10-08
JP2024144896A (ja) 2024-10-15
EP4443241A2 (en) 2024-10-09

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