JP7809651B2 - 太陽電池の電極構造および製造方法 - Google Patents

太陽電池の電極構造および製造方法

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Publication number
JP7809651B2
JP7809651B2 JP2022571485A JP2022571485A JP7809651B2 JP 7809651 B2 JP7809651 B2 JP 7809651B2 JP 2022571485 A JP2022571485 A JP 2022571485A JP 2022571485 A JP2022571485 A JP 2022571485A JP 7809651 B2 JP7809651 B2 JP 7809651B2
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JP
Japan
Prior art keywords
layer
solar cell
wiring member
electrode structure
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022571485A
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English (en)
Japanese (ja)
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JPWO2022138619A1 (https=
Inventor
善秀 宮川
一仁 深澤
幹雄 濱野
恭平 堀口
幸士 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
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Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Publication of JPWO2022138619A1 publication Critical patent/JPWO2022138619A1/ja
Application granted granted Critical
Publication of JP7809651B2 publication Critical patent/JP7809651B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/906—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/939—Output lead wires or elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
JP2022571485A 2020-12-21 2021-12-21 太陽電池の電極構造および製造方法 Active JP7809651B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020211746 2020-12-21
JP2020211746 2020-12-21
PCT/JP2021/047243 WO2022138619A1 (ja) 2020-12-21 2021-12-21 太陽電池の電極構造および製造方法

Publications (2)

Publication Number Publication Date
JPWO2022138619A1 JPWO2022138619A1 (https=) 2022-06-30
JP7809651B2 true JP7809651B2 (ja) 2026-02-02

Family

ID=82159339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022571485A Active JP7809651B2 (ja) 2020-12-21 2021-12-21 太陽電池の電極構造および製造方法

Country Status (5)

Country Link
US (1) US20240038910A1 (https=)
EP (1) EP4266375A4 (https=)
JP (1) JP7809651B2 (https=)
CN (1) CN116636019A (https=)
WO (1) WO2022138619A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12100776B2 (en) * 2022-09-30 2024-09-24 Zhejiang Jinko Solar Co., Ltd. Photovoltaic module and method for producing the same

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007059760A (ja) 2005-08-26 2007-03-08 Victor Co Of Japan Ltd 素子の接合方法
JP2011077229A (ja) 2009-09-30 2011-04-14 Fujifilm Corp 光電変換装置
JP2012256881A (ja) 2011-06-07 2012-12-27 Korea Electronics Telecommun 太陽電池モジュールの製造方法
JP2013074117A (ja) 2011-09-28 2013-04-22 Kyocera Corp 光電変換モジュール
US20140102529A1 (en) 2012-10-17 2014-04-17 Emcore Solar Power, Inc. Solar cell interconnect assembly and method for manufacturing the same
JP2014225666A (ja) 2013-05-14 2014-12-04 三星エスディアイ株式会社Ｓａｍｓｕｎｇ ＳＤＩ Ｃｏ．，Ｌｔｄ． 太陽電池
JP2014237170A (ja) 2013-06-10 2014-12-18 三菱電機株式会社 超音波はんだ接合用鉛フリーはんだ合金及びそれを用いた超音波はんだ接合方法
JP2015162482A (ja) 2014-02-26 2015-09-07 京セラ株式会社 太陽電池モジュール
JP2019176307A (ja) 2018-03-28 2019-10-10 日本電波工業株式会社 発振器
US20200027999A1 (en) 2015-08-17 2020-01-23 Solaero Technologies Corp. Multijunction solar cell and solar cell assemblies for space applications
WO2020027104A1 (ja) 2018-07-30 2020-02-06 出光興産株式会社 光電変換モジュール
JP2020057694A (ja) 2018-10-02 2020-04-09 パナソニック株式会社 太陽電池セル
CN111299802A (zh) 2018-12-11 2020-06-19 华夏易能(海南)新能源科技有限公司 扁平电缆与钼层的连接方法、焊接结构件和cigs太阳能电池

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6255963A (ja) 1985-09-04 1987-03-11 Mitsubishi Electric Corp ＧａＡｓ半導体装置
JPH04251676A (ja) * 1991-01-28 1992-09-08 Nisshin Steel Co Ltd 鋼材とアルミニウム系材料との抵抗溶接方法
JPH0671092B2 (ja) * 1992-07-15 1994-09-07 株式会社半導体エネルギー研究所 薄膜太陽電池
JP3842356B2 (ja) * 1996-12-18 2006-11-08 ローム株式会社 半導体装置、およびその製造方法
JP2000004034A (ja) 1998-06-16 2000-01-07 Yazaki Corp 太陽電池モジュールにおけるバスバーの接続方法
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
JP4993916B2 (ja) 2006-01-31 2012-08-08 昭和シェル石油株式会社 Ｉｎハンダ被覆銅箔リボン導線及びその接続方法
JP5064107B2 (ja) * 2007-05-09 2012-10-31 昭和シェル石油株式会社 電子部品モジュール又はｃｉｓ系薄膜太陽電池モジュールのリボンワイヤの接続方法
EP2146404A1 (en) * 2007-05-09 2010-01-20 Hitachi Chemical Company, Ltd. Method for connecting conductor, member for connecting conductor, connecting structure and solar cell module
JP4974301B2 (ja) 2008-04-04 2012-07-11 昭和シェル石油株式会社 太陽電池モジュールの製造方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007059760A (ja) 2005-08-26 2007-03-08 Victor Co Of Japan Ltd 素子の接合方法
JP2011077229A (ja) 2009-09-30 2011-04-14 Fujifilm Corp 光電変換装置
JP2012256881A (ja) 2011-06-07 2012-12-27 Korea Electronics Telecommun 太陽電池モジュールの製造方法
JP2013074117A (ja) 2011-09-28 2013-04-22 Kyocera Corp 光電変換モジュール
US20140102529A1 (en) 2012-10-17 2014-04-17 Emcore Solar Power, Inc. Solar cell interconnect assembly and method for manufacturing the same
JP2014225666A (ja) 2013-05-14 2014-12-04 三星エスディアイ株式会社Ｓａｍｓｕｎｇ ＳＤＩ Ｃｏ．，Ｌｔｄ． 太陽電池
JP2014237170A (ja) 2013-06-10 2014-12-18 三菱電機株式会社 超音波はんだ接合用鉛フリーはんだ合金及びそれを用いた超音波はんだ接合方法
JP2015162482A (ja) 2014-02-26 2015-09-07 京セラ株式会社 太陽電池モジュール
US20200027999A1 (en) 2015-08-17 2020-01-23 Solaero Technologies Corp. Multijunction solar cell and solar cell assemblies for space applications
JP2019176307A (ja) 2018-03-28 2019-10-10 日本電波工業株式会社 発振器
WO2020027104A1 (ja) 2018-07-30 2020-02-06 出光興産株式会社 光電変換モジュール
JP2020057694A (ja) 2018-10-02 2020-04-09 パナソニック株式会社 太陽電池セル
CN111299802A (zh) 2018-12-11 2020-06-19 华夏易能(海南)新能源科技有限公司 扁平电缆与钼层的连接方法、焊接结构件和cigs太阳能电池

Also Published As

Publication number Publication date
JPWO2022138619A1 (https=) 2022-06-30
WO2022138619A1 (ja) 2022-06-30
EP4266375A1 (en) 2023-10-25
US20240038910A1 (en) 2024-02-01
EP4266375A4 (en) 2024-12-18
CN116636019A (zh) 2023-08-22

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