CN116636019A - 太阳能电池的电极结构和制造方法 - Google Patents

太阳能电池的电极结构和制造方法 Download PDF

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Publication number
CN116636019A
CN116636019A CN202180085865.0A CN202180085865A CN116636019A CN 116636019 A CN116636019 A CN 116636019A CN 202180085865 A CN202180085865 A CN 202180085865A CN 116636019 A CN116636019 A CN 116636019A
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CN
China
Prior art keywords
layer
solar cell
bonding layer
electrode structure
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180085865.0A
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English (en)
Chinese (zh)
Inventor
宫川善秀
深泽一仁
滨野干雄
堀口恭平
山口幸士
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Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Publication of CN116636019A publication Critical patent/CN116636019A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/906—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/939—Output lead wires or elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
CN202180085865.0A 2020-12-21 2021-12-21 太阳能电池的电极结构和制造方法 Pending CN116636019A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-211746 2020-12-21
JP2020211746 2020-12-21
PCT/JP2021/047243 WO2022138619A1 (ja) 2020-12-21 2021-12-21 太陽電池の電極構造および製造方法

Publications (1)

Publication Number Publication Date
CN116636019A true CN116636019A (zh) 2023-08-22

Family

ID=82159339

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180085865.0A Pending CN116636019A (zh) 2020-12-21 2021-12-21 太阳能电池的电极结构和制造方法

Country Status (5)

Country Link
US (1) US20240038910A1 (https=)
EP (1) EP4266375A4 (https=)
JP (1) JP7809651B2 (https=)
CN (1) CN116636019A (https=)
WO (1) WO2022138619A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12100776B2 (en) * 2022-09-30 2024-09-24 Zhejiang Jinko Solar Co., Ltd. Photovoltaic module and method for producing the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
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JPS6255963A (ja) 1985-09-04 1987-03-11 Mitsubishi Electric Corp ＧａＡｓ半導体装置
JPH04251676A (ja) * 1991-01-28 1992-09-08 Nisshin Steel Co Ltd 鋼材とアルミニウム系材料との抵抗溶接方法
JPH0671092B2 (ja) * 1992-07-15 1994-09-07 株式会社半導体エネルギー研究所 薄膜太陽電池
JP3842356B2 (ja) * 1996-12-18 2006-11-08 ローム株式会社 半導体装置、およびその製造方法
JP2000004034A (ja) 1998-06-16 2000-01-07 Yazaki Corp 太陽電池モジュールにおけるバスバーの接続方法
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
JP2007059760A (ja) * 2005-08-26 2007-03-08 Victor Co Of Japan Ltd 素子の接合方法
JP4993916B2 (ja) 2006-01-31 2012-08-08 昭和シェル石油株式会社 Ｉｎハンダ被覆銅箔リボン導線及びその接続方法
JP5064107B2 (ja) * 2007-05-09 2012-10-31 昭和シェル石油株式会社 電子部品モジュール又はｃｉｓ系薄膜太陽電池モジュールのリボンワイヤの接続方法
EP2146404A1 (en) * 2007-05-09 2010-01-20 Hitachi Chemical Company, Ltd. Method for connecting conductor, member for connecting conductor, connecting structure and solar cell module
JP4974301B2 (ja) 2008-04-04 2012-07-11 昭和シェル石油株式会社 太陽電池モジュールの製造方法
JP2011077229A (ja) * 2009-09-30 2011-04-14 Fujifilm Corp 光電変換装置
JP2012256881A (ja) * 2011-06-07 2012-12-27 Korea Electronics Telecommun 太陽電池モジュールの製造方法
JP2013074117A (ja) * 2011-09-28 2013-04-22 Kyocera Corp 光電変換モジュール
US20140102529A1 (en) * 2012-10-17 2014-04-17 Emcore Solar Power, Inc. Solar cell interconnect assembly and method for manufacturing the same
US20140338737A1 (en) * 2013-05-14 2014-11-20 Samsung Sdi Co., Ltd. Solar cell
JP2014237170A (ja) * 2013-06-10 2014-12-18 三菱電機株式会社 超音波はんだ接合用鉛フリーはんだ合金及びそれを用いた超音波はんだ接合方法
JP2015162482A (ja) * 2014-02-26 2015-09-07 京セラ株式会社 太陽電池モジュール
US20200027999A1 (en) * 2015-08-17 2020-01-23 Solaero Technologies Corp. Multijunction solar cell and solar cell assemblies for space applications
JP2019176307A (ja) * 2018-03-28 2019-10-10 日本電波工業株式会社 発振器
JPWO2020027104A1 (ja) * 2018-07-30 2021-08-02 出光興産株式会社 光電変換モジュール
JP2020057694A (ja) * 2018-10-02 2020-04-09 パナソニック株式会社 太陽電池セル
CN111299802A (zh) * 2018-12-11 2020-06-19 华夏易能(海南)新能源科技有限公司 扁平电缆与钼层的连接方法、焊接结构件和cigs太阳能电池

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Publication number Publication date
JPWO2022138619A1 (https=) 2022-06-30
WO2022138619A1 (ja) 2022-06-30
EP4266375A1 (en) 2023-10-25
JP7809651B2 (ja) 2026-02-02
US20240038910A1 (en) 2024-02-01
EP4266375A4 (en) 2024-12-18

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