JP7799651B2 - 半導体装置および機器 - Google Patents

半導体装置および機器

Info

Publication number
JP7799651B2
JP7799651B2 JP2023066474A JP2023066474A JP7799651B2 JP 7799651 B2 JP7799651 B2 JP 7799651B2 JP 2023066474 A JP2023066474 A JP 2023066474A JP 2023066474 A JP2023066474 A JP 2023066474A JP 7799651 B2 JP7799651 B2 JP 7799651B2
Authority
JP
Japan
Prior art keywords
circuit
voltage
semiconductor device
wiring
connection portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023066474A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024152342A (ja
Inventor
秀央 小林
雄二 中島
和宏 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2023066474A priority Critical patent/JP7799651B2/ja
Priority to US18/626,184 priority patent/US20240347556A1/en
Priority to TW113112940A priority patent/TW202508037A/zh
Priority to DE102024110254.3A priority patent/DE102024110254A1/de
Priority to CN202410442122.XA priority patent/CN118803451A/zh
Publication of JP2024152342A publication Critical patent/JP2024152342A/ja
Priority to JP2025282406A priority patent/JP2026040707A/ja
Application granted granted Critical
Publication of JP7799651B2 publication Critical patent/JP7799651B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2023066474A 2023-04-14 2023-04-14 半導体装置および機器 Active JP7799651B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2023066474A JP7799651B2 (ja) 2023-04-14 2023-04-14 半導体装置および機器
US18/626,184 US20240347556A1 (en) 2023-04-14 2024-04-03 Semiconductor apparatus and equipment
TW113112940A TW202508037A (zh) 2023-04-14 2024-04-08 半導體設備和器材
DE102024110254.3A DE102024110254A1 (de) 2023-04-14 2024-04-12 Halbleitervorrichtung und Gerät
CN202410442122.XA CN118803451A (zh) 2023-04-14 2024-04-12 半导体设备和器材
JP2025282406A JP2026040707A (ja) 2023-04-14 2025-12-25 半導体装置および機器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023066474A JP7799651B2 (ja) 2023-04-14 2023-04-14 半導体装置および機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025282406A Division JP2026040707A (ja) 2023-04-14 2025-12-25 半導体装置および機器

Publications (2)

Publication Number Publication Date
JP2024152342A JP2024152342A (ja) 2024-10-25
JP7799651B2 true JP7799651B2 (ja) 2026-01-15

Family

ID=92908561

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023066474A Active JP7799651B2 (ja) 2023-04-14 2023-04-14 半導体装置および機器
JP2025282406A Pending JP2026040707A (ja) 2023-04-14 2025-12-25 半導体装置および機器

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025282406A Pending JP2026040707A (ja) 2023-04-14 2025-12-25 半導体装置および機器

Country Status (5)

Country Link
US (1) US20240347556A1 (https=)
JP (2) JP7799651B2 (https=)
CN (1) CN118803451A (https=)
DE (1) DE102024110254A1 (https=)
TW (1) TW202508037A (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003225199A (ja) 2002-02-01 2003-08-12 Pentax Corp 電子内視鏡装置のビデオスコープ
JP2004361722A (ja) 2003-06-05 2004-12-24 Advanced Display Inc 表示装置
JP2007173483A (ja) 2005-12-21 2007-07-05 Sanyo Electric Co Ltd 半導体装置及びその製造方法、カメラモジュール
JP2010217009A (ja) 2009-03-17 2010-09-30 Mitsubishi Electric Corp 赤外線固体撮像素子
WO2013099266A1 (ja) 2011-12-28 2013-07-04 株式会社ニコン 撮像装置
JP2014078869A (ja) 2012-10-11 2014-05-01 Fujifilm Corp 固体撮像素子および撮像装置並びに固体撮像素子の駆動制御方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022023639A (ja) 2020-07-27 2022-02-08 ソニーセミコンダクタソリューションズ株式会社 撮像装置およびその駆動方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003225199A (ja) 2002-02-01 2003-08-12 Pentax Corp 電子内視鏡装置のビデオスコープ
JP2004361722A (ja) 2003-06-05 2004-12-24 Advanced Display Inc 表示装置
JP2007173483A (ja) 2005-12-21 2007-07-05 Sanyo Electric Co Ltd 半導体装置及びその製造方法、カメラモジュール
JP2010217009A (ja) 2009-03-17 2010-09-30 Mitsubishi Electric Corp 赤外線固体撮像素子
WO2013099266A1 (ja) 2011-12-28 2013-07-04 株式会社ニコン 撮像装置
JP2014078869A (ja) 2012-10-11 2014-05-01 Fujifilm Corp 固体撮像素子および撮像装置並びに固体撮像素子の駆動制御方法

Also Published As

Publication number Publication date
TW202508037A (zh) 2025-02-16
US20240347556A1 (en) 2024-10-17
JP2026040707A (ja) 2026-03-09
JP2024152342A (ja) 2024-10-25
DE102024110254A1 (de) 2024-10-17
CN118803451A (zh) 2024-10-18

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