TW202508037A - 半導體設備和器材 - Google Patents

半導體設備和器材 Download PDF

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Publication number
TW202508037A
TW202508037A TW113112940A TW113112940A TW202508037A TW 202508037 A TW202508037 A TW 202508037A TW 113112940 A TW113112940 A TW 113112940A TW 113112940 A TW113112940 A TW 113112940A TW 202508037 A TW202508037 A TW 202508037A
Authority
TW
Taiwan
Prior art keywords
voltage
semiconductor device
circuit
pixels
generating circuit
Prior art date
Application number
TW113112940A
Other languages
English (en)
Chinese (zh)
Inventor
小林秀央
中島雄二
斉藤和宏
Original Assignee
日商佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商佳能股份有限公司 filed Critical 日商佳能股份有限公司
Publication of TW202508037A publication Critical patent/TW202508037A/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW113112940A 2023-04-14 2024-04-08 半導體設備和器材 TW202508037A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-066474 2023-04-14
JP2023066474A JP7799651B2 (ja) 2023-04-14 2023-04-14 半導体装置および機器

Publications (1)

Publication Number Publication Date
TW202508037A true TW202508037A (zh) 2025-02-16

Family

ID=92908561

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113112940A TW202508037A (zh) 2023-04-14 2024-04-08 半導體設備和器材

Country Status (5)

Country Link
US (1) US20240347556A1 (https=)
JP (2) JP7799651B2 (https=)
CN (1) CN118803451A (https=)
DE (1) DE102024110254A1 (https=)
TW (1) TW202508037A (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003225199A (ja) * 2002-02-01 2003-08-12 Pentax Corp 電子内視鏡装置のビデオスコープ
JP4004994B2 (ja) * 2003-06-05 2007-11-07 株式会社アドバンスト・ディスプレイ 表示装置
JP5427337B2 (ja) * 2005-12-21 2014-02-26 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置及びその製造方法、カメラモジュール
JP4685949B2 (ja) * 2009-03-17 2011-05-18 三菱電機株式会社 赤外線固体撮像素子
JP5907176B2 (ja) * 2011-12-28 2016-04-26 株式会社ニコン 撮像装置
JP2014078869A (ja) * 2012-10-11 2014-05-01 Fujifilm Corp 固体撮像素子および撮像装置並びに固体撮像素子の駆動制御方法
JP2022023639A (ja) 2020-07-27 2022-02-08 ソニーセミコンダクタソリューションズ株式会社 撮像装置およびその駆動方法

Also Published As

Publication number Publication date
US20240347556A1 (en) 2024-10-17
JP2026040707A (ja) 2026-03-09
JP2024152342A (ja) 2024-10-25
DE102024110254A1 (de) 2024-10-17
JP7799651B2 (ja) 2026-01-15
CN118803451A (zh) 2024-10-18

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