CN118803451A - 半导体设备和器材 - Google Patents
半导体设备和器材 Download PDFInfo
- Publication number
- CN118803451A CN118803451A CN202410442122.XA CN202410442122A CN118803451A CN 118803451 A CN118803451 A CN 118803451A CN 202410442122 A CN202410442122 A CN 202410442122A CN 118803451 A CN118803451 A CN 118803451A
- Authority
- CN
- China
- Prior art keywords
- voltage
- semiconductor device
- circuit
- pixels
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000012545 processing Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 62
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 60
- 238000003384 imaging method Methods 0.000 description 57
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 23
- 230000015556 catabolic process Effects 0.000 description 11
- 238000006731 degradation reaction Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 230000006870 function Effects 0.000 description 8
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 4
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 2
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 101100256578 Homo sapiens SELENOH gene Proteins 0.000 description 1
- 102100023840 Selenoprotein H Human genes 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
- H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/709—Circuitry for control of the power supply
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-066474 | 2023-04-14 | ||
| JP2023066474A JP7799651B2 (ja) | 2023-04-14 | 2023-04-14 | 半導体装置および機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118803451A true CN118803451A (zh) | 2024-10-18 |
Family
ID=92908561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410442122.XA Pending CN118803451A (zh) | 2023-04-14 | 2024-04-12 | 半导体设备和器材 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240347556A1 (https=) |
| JP (2) | JP7799651B2 (https=) |
| CN (1) | CN118803451A (https=) |
| DE (1) | DE102024110254A1 (https=) |
| TW (1) | TW202508037A (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003225199A (ja) * | 2002-02-01 | 2003-08-12 | Pentax Corp | 電子内視鏡装置のビデオスコープ |
| JP4004994B2 (ja) * | 2003-06-05 | 2007-11-07 | 株式会社アドバンスト・ディスプレイ | 表示装置 |
| JP5427337B2 (ja) * | 2005-12-21 | 2014-02-26 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法、カメラモジュール |
| JP4685949B2 (ja) * | 2009-03-17 | 2011-05-18 | 三菱電機株式会社 | 赤外線固体撮像素子 |
| JP5907176B2 (ja) * | 2011-12-28 | 2016-04-26 | 株式会社ニコン | 撮像装置 |
| JP2014078869A (ja) * | 2012-10-11 | 2014-05-01 | Fujifilm Corp | 固体撮像素子および撮像装置並びに固体撮像素子の駆動制御方法 |
| JP2022023639A (ja) | 2020-07-27 | 2022-02-08 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置およびその駆動方法 |
-
2023
- 2023-04-14 JP JP2023066474A patent/JP7799651B2/ja active Active
-
2024
- 2024-04-03 US US18/626,184 patent/US20240347556A1/en active Pending
- 2024-04-08 TW TW113112940A patent/TW202508037A/zh unknown
- 2024-04-12 CN CN202410442122.XA patent/CN118803451A/zh active Pending
- 2024-04-12 DE DE102024110254.3A patent/DE102024110254A1/de active Pending
-
2025
- 2025-12-25 JP JP2025282406A patent/JP2026040707A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202508037A (zh) | 2025-02-16 |
| US20240347556A1 (en) | 2024-10-17 |
| JP2026040707A (ja) | 2026-03-09 |
| JP2024152342A (ja) | 2024-10-25 |
| DE102024110254A1 (de) | 2024-10-17 |
| JP7799651B2 (ja) | 2026-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |