JP7736696B2 - 半導体発光装置及び光源装置 - Google Patents

半導体発光装置及び光源装置

Info

Publication number
JP7736696B2
JP7736696B2 JP2022544463A JP2022544463A JP7736696B2 JP 7736696 B2 JP7736696 B2 JP 7736696B2 JP 2022544463 A JP2022544463 A JP 2022544463A JP 2022544463 A JP2022544463 A JP 2022544463A JP 7736696 B2 JP7736696 B2 JP 7736696B2
Authority
JP
Japan
Prior art keywords
semiconductor light
metal layer
light emitting
emitting device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022544463A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022044865A5 (https=
JPWO2022044865A1 (https=
Inventor
一彦 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of JPWO2022044865A1 publication Critical patent/JPWO2022044865A1/ja
Publication of JPWO2022044865A5 publication Critical patent/JPWO2022044865A5/ja
Application granted granted Critical
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Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0064—Anti-reflection components, e.g. optical isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
JP2022544463A 2020-08-25 2021-08-16 半導体発光装置及び光源装置 Active JP7736696B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020141924 2020-08-25
JP2020141924 2020-08-25
PCT/JP2021/029884 WO2022044865A1 (ja) 2020-08-25 2021-08-16 半導体発光装置及び光源装置

Publications (3)

Publication Number Publication Date
JPWO2022044865A1 JPWO2022044865A1 (https=) 2022-03-03
JPWO2022044865A5 JPWO2022044865A5 (https=) 2023-05-12
JP7736696B2 true JP7736696B2 (ja) 2025-09-09

Family

ID=80354205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022544463A Active JP7736696B2 (ja) 2020-08-25 2021-08-16 半導体発光装置及び光源装置

Country Status (3)

Country Link
US (1) US20230198221A1 (https=)
JP (1) JP7736696B2 (https=)
WO (1) WO2022044865A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230238770A1 (en) * 2022-01-24 2023-07-27 Materion Corporation Semiconductor package for an edge emitting laser diode
WO2025183158A1 (ja) * 2024-02-28 2025-09-04 京セラ株式会社 光素子搭載用パッケージ及び発光装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087543A (ja) 2002-08-23 2004-03-18 Furukawa Electric Co Ltd:The 光モジュール
US20050275075A1 (en) 2004-06-11 2005-12-15 Suk-Kee Hong Micro-electro-mechanical system (MEMS) package with spacer for sealing and method of manufacturing the same
JP2011112737A (ja) 2009-11-25 2011-06-09 Oki Data Corp 表示パネル、表示パネルの製造方法、及び表示装置
WO2011142059A1 (ja) 2010-05-12 2011-11-17 パナソニック株式会社 半導体装置及びその製造方法
JP2013157364A (ja) 2012-01-27 2013-08-15 Oki Data Corp 発光パネル、及びそれを備えたヘッドアップディスプレイ
JP2013156556A (ja) 2012-01-31 2013-08-15 Oki Data Corp 表示パネル、表示パネルの製造方法、及び表示装置
JP2018106973A (ja) 2016-12-27 2018-07-05 大日本印刷株式会社 Ｌｅｄバックライト装置およびｌｅｄ画像表示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005505A (ja) * 2005-06-23 2007-01-11 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2009088066A (ja) * 2007-09-28 2009-04-23 Panasonic Corp 半導体装置
JP5127594B2 (ja) * 2008-06-26 2013-01-23 三菱電機株式会社 半導体パッケージ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087543A (ja) 2002-08-23 2004-03-18 Furukawa Electric Co Ltd:The 光モジュール
US20050275075A1 (en) 2004-06-11 2005-12-15 Suk-Kee Hong Micro-electro-mechanical system (MEMS) package with spacer for sealing and method of manufacturing the same
JP2011112737A (ja) 2009-11-25 2011-06-09 Oki Data Corp 表示パネル、表示パネルの製造方法、及び表示装置
WO2011142059A1 (ja) 2010-05-12 2011-11-17 パナソニック株式会社 半導体装置及びその製造方法
JP2013157364A (ja) 2012-01-27 2013-08-15 Oki Data Corp 発光パネル、及びそれを備えたヘッドアップディスプレイ
JP2013156556A (ja) 2012-01-31 2013-08-15 Oki Data Corp 表示パネル、表示パネルの製造方法、及び表示装置
JP2018106973A (ja) 2016-12-27 2018-07-05 大日本印刷株式会社 Ｌｅｄバックライト装置およびｌｅｄ画像表示装置

Also Published As

Publication number Publication date
US20230198221A1 (en) 2023-06-22
WO2022044865A1 (ja) 2022-03-03
JPWO2022044865A1 (https=) 2022-03-03

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