JP7702479B2 - ガス供給システム、基板処理装置、及びガス供給システムの運用方法 - Google Patents

ガス供給システム、基板処理装置、及びガス供給システムの運用方法 Download PDF

Info

Publication number
JP7702479B2
JP7702479B2 JP2023515432A JP2023515432A JP7702479B2 JP 7702479 B2 JP7702479 B2 JP 7702479B2 JP 2023515432 A JP2023515432 A JP 2023515432A JP 2023515432 A JP2023515432 A JP 2023515432A JP 7702479 B2 JP7702479 B2 JP 7702479B2
Authority
JP
Japan
Prior art keywords
gas
gas supply
heat transfer
pressure
pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023515432A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022224887A1 (https=
JPWO2022224887A5 (https=
Inventor
栄一 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2022224887A1 publication Critical patent/JPWO2022224887A1/ja
Publication of JPWO2022224887A5 publication Critical patent/JPWO2022224887A5/ja
Application granted granted Critical
Publication of JP7702479B2 publication Critical patent/JP7702479B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
JP2023515432A 2021-04-21 2022-04-13 ガス供給システム、基板処理装置、及びガス供給システムの運用方法 Active JP7702479B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021071667 2021-04-21
JP2021071667 2021-04-21
PCT/JP2022/017694 WO2022224887A1 (ja) 2021-04-21 2022-04-13 ガス供給システム、基板処理装置、及びガス供給システムの運用方法

Publications (3)

Publication Number Publication Date
JPWO2022224887A1 JPWO2022224887A1 (https=) 2022-10-27
JPWO2022224887A5 JPWO2022224887A5 (https=) 2024-03-26
JP7702479B2 true JP7702479B2 (ja) 2025-07-03

Family

ID=83722937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023515432A Active JP7702479B2 (ja) 2021-04-21 2022-04-13 ガス供給システム、基板処理装置、及びガス供給システムの運用方法

Country Status (5)

Country Link
US (1) US12553132B2 (https=)
JP (1) JP7702479B2 (https=)
KR (1) KR20230171955A (https=)
CN (1) CN117121171A (https=)
WO (1) WO2022224887A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025250431A1 (en) * 2024-05-31 2025-12-04 Lam Research Corporation Dual backside gas supply system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347283A (ja) 2002-05-30 2003-12-05 Tokyo Electron Ltd 真空処理装置
JP2006303144A (ja) 2005-04-20 2006-11-02 Hitachi High-Technologies Corp 真空処理装置及び試料の真空処理方法
JP2013153171A (ja) 2013-02-15 2013-08-08 Panasonic Corp プラズマ処理装置及びプラズマ処理方法
JP2017530545A (ja) 2014-09-12 2017-10-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 静電チャックのためのガス効率の向上

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3055847B2 (ja) * 1993-07-02 2000-06-26 東京エレクトロン株式会社 減圧処理装置
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JPH10240356A (ja) * 1997-02-21 1998-09-11 Anelva Corp 基板処理装置の基板温度制御法と基板温度制御性判定法
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US7041224B2 (en) * 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
JP5714449B2 (ja) * 2011-08-25 2015-05-07 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
JP5912439B2 (ja) 2011-11-15 2016-04-27 東京エレクトロン株式会社 温度制御システム、半導体製造装置及び温度制御方法
US10553463B2 (en) * 2011-11-15 2020-02-04 Tokyo Electron Limited Temperature control system, semiconductor manufacturing device, and temperature control method
JP6689020B2 (ja) 2013-08-21 2020-04-28 東京エレクトロン株式会社 プラズマ処理装置
GB2592022A (en) * 2020-02-12 2021-08-18 Edwards Vacuum Llc A pressure regulated semiconductor wafer cooling apparatus and method and a pressure regulating apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347283A (ja) 2002-05-30 2003-12-05 Tokyo Electron Ltd 真空処理装置
JP2006303144A (ja) 2005-04-20 2006-11-02 Hitachi High-Technologies Corp 真空処理装置及び試料の真空処理方法
JP2013153171A (ja) 2013-02-15 2013-08-08 Panasonic Corp プラズマ処理装置及びプラズマ処理方法
JP2017530545A (ja) 2014-09-12 2017-10-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 静電チャックのためのガス効率の向上

Also Published As

Publication number Publication date
JPWO2022224887A1 (https=) 2022-10-27
US20240191356A1 (en) 2024-06-13
KR20230171955A (ko) 2023-12-21
TW202247282A (zh) 2022-12-01
WO2022224887A1 (ja) 2022-10-27
US12553132B2 (en) 2026-02-17
CN117121171A (zh) 2023-11-24

Similar Documents

Publication Publication Date Title
JP2023001473A (ja) プラズマ処理装置及びプラズマ処理方法
JP7702479B2 (ja) ガス供給システム、基板処理装置、及びガス供給システムの運用方法
JP2024004893A (ja) プラズマ処理システムおよびプラズマ処理方法
TW202425051A (zh) 蝕刻方法及電漿處理裝置
JPWO2022224887A5 (https=)
TWI913455B (zh) 氣體供給系統、基板處理裝置及氣體供給系統之運用方法
JP7378668B2 (ja) 静電チャックおよび基板処理装置
US20220392748A1 (en) Plasma processing apparatus and plasma processing method
WO2023157682A1 (ja) エッジリングの消耗量を求める方法、プラズマ処理装置、及び基板処理システム
JP2024134515A (ja) プラズマ処理装置
US20240321559A1 (en) Plasma processing apparatus
JP2022078719A (ja) 基板処理装置及び基板処理方法
JP7582749B2 (ja) 温度制御方法及び温度制御装置
US20250343027A1 (en) Plasma-processing apparatus and plasma-processing method
WO2025182632A1 (ja) プラズマ処理装置
TW202542996A (zh) 基板處理方法及基板處理裝置
WO2024048461A1 (ja) 温度制御装置、基板処理装置及び温度制御方法
JP2024098586A (ja) プラズマ処理装置及び制御方法
JP2025064037A (ja) 静電チャック、基板支持器、及びプラズマ処理装置
WO2024070580A1 (ja) プラズマ処理装置及び電源システム
JP2024119243A (ja) プラズマ処理装置、電源システム、及びプラズマ処理方法
JP2024134938A (ja) プラズマ処理装置
WO2025253941A1 (ja) プラズマ処理装置
JP2024053875A (ja) プラズマ処理装置及びプラズマ処理装置の制御方法
WO2025142138A1 (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240312

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240312

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250212

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250318

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250527

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250623

R150 Certificate of patent or registration of utility model

Ref document number: 7702479

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150