JP7700051B2 - ＡｌＮ積層板 - Google Patents

ＡｌＮ積層板 Download PDF

Info

Publication number
JP7700051B2
JP7700051B2 JP2021567342A JP2021567342A JP7700051B2 JP 7700051 B2 JP7700051 B2 JP 7700051B2 JP 2021567342 A JP2021567342 A JP 2021567342A JP 2021567342 A JP2021567342 A JP 2021567342A JP 7700051 B2 JP7700051 B2 JP 7700051B2
Authority
JP
Japan
Prior art keywords
aln
layer
single crystal
void
containing region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021567342A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021131967A5 (https=
JPWO2021131967A1 (https=
Inventor
博久 小川
義政 小林
和希 飯田
宏之 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2021131967A1 publication Critical patent/JPWO2021131967A1/ja
Publication of JPWO2021131967A5 publication Critical patent/JPWO2021131967A5/ja
Application granted granted Critical
Publication of JP7700051B2 publication Critical patent/JP7700051B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2021567342A 2019-12-23 2020-12-16 ＡｌＮ積層板 Active JP7700051B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019231910 2019-12-23
JP2019231910 2019-12-23
PCT/JP2020/046972 WO2021131967A1 (ja) 2019-12-23 2020-12-16 ＡｌＮ積層板

Publications (3)

Publication Number Publication Date
JPWO2021131967A1 JPWO2021131967A1 (https=) 2021-07-01
JPWO2021131967A5 JPWO2021131967A5 (https=) 2022-08-19
JP7700051B2 true JP7700051B2 (ja) 2025-06-30

Family

ID=76575915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021567342A Active JP7700051B2 (ja) 2019-12-23 2020-12-16 ＡｌＮ積層板

Country Status (2)

Country Link
JP (1) JP7700051B2 (https=)
WO (1) WO2021131967A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009190960A (ja) 2008-01-16 2009-08-27 Tokyo Univ Of Agriculture & Technology 積層体およびその製造方法
JP2010254499A (ja) 2009-04-22 2010-11-11 Tokuyama Corp Ｉｉｉ族窒化物結晶基板の製造方法
JP2016175816A (ja) 2015-03-23 2016-10-06 Tdk株式会社 アルミナ基板

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010613A (ja) * 2008-06-30 2010-01-14 Tokuyama Corp 積層体、自立基板製造用基板、自立基板およびこれらの製造方法
JP4707755B2 (ja) * 2009-07-16 2011-06-22 株式会社トクヤマ 窒化アルミニウム単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いた窒化アルミニウム単結晶基板の製造方法、および、窒化アルミニウム単結晶基板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009190960A (ja) 2008-01-16 2009-08-27 Tokyo Univ Of Agriculture & Technology 積層体およびその製造方法
JP2010254499A (ja) 2009-04-22 2010-11-11 Tokuyama Corp Ｉｉｉ族窒化物結晶基板の製造方法
JP2016175816A (ja) 2015-03-23 2016-10-06 Tdk株式会社 アルミナ基板

Also Published As

Publication number Publication date
JPWO2021131967A1 (https=) 2021-07-01
WO2021131967A1 (ja) 2021-07-01

Similar Documents

Publication Publication Date Title
TWI489016B (zh) Single crystal substrate, single crystal substrate manufacturing method, multi-layer single-crystal substrate manufacturing method and component manufacturing method
CN102770940B (zh) 带多层膜的单晶衬底、带多层膜的单晶衬底的制造方法以及元件制造方法
JP5631034B2 (ja) 窒化物半導体エピタキシャル基板
WO2017106788A1 (en) Methods for improving wafer planarity and bonded wafer assemblies made from the methods
JP2018514498A (ja) ダイヤモンド−半導体複合基板を製造する方法
JP7262027B2 (ja) Ｉｉｉ族窒化物半導体の製造方法
WO2009084431A1 (ja) 半導体材料、半導体材料の製造方法及び半導体素子
JP5159858B2 (ja) 窒化ガリウム系化合物半導体基板とその製造方法
CN107881557A (zh) 氮化物晶体衬底的制造方法及氮化物晶体层叠体
JP6210415B2 (ja) 紫外線発光素子の製造方法
JP6138974B2 (ja) 半導体基板
JP2020502034A (ja) 合成ダイヤモンド板
WO2017159682A1 (ja) 半導体装置および半導体装置を生産する方法
TWI675355B (zh) 可撓式顯示面板
JP7700051B2 (ja) ＡｌＮ積層板
KR102610099B1 (ko) SiC 기판 및 SiC 에피택셜 웨이퍼
JP7290952B2 (ja) 窒化物半導体基板のアニール方法
KR20100052167A (ko) 웨이퍼 본딩 방법 및 웨이퍼 본딩 장비
JP7620571B2 (ja) ＡｌＮ積層板
JP6029538B2 (ja) 半導体装置
CN114761630B (zh) AlN单晶板
JP2017109877A (ja) ダイヤモンド基板
WO2023119916A1 (ja) 窒化物半導体基板および窒化物半導体基板の製造方法
CN115938911A (zh) 氮化物半导体结构及其制造方法
WO2017022647A1 (ja) ダイヤモンド基板及びダイヤモンド基板の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220421

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230720

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241001

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250304

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250418

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250610

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250618

R150 Certificate of patent or registration of utility model

Ref document number: 7700051

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150