JPWO2021131967A1 - - Google Patents
Info
- Publication number
- JPWO2021131967A1 JPWO2021131967A1 JP2021567342A JP2021567342A JPWO2021131967A1 JP WO2021131967 A1 JPWO2021131967 A1 JP WO2021131967A1 JP 2021567342 A JP2021567342 A JP 2021567342A JP 2021567342 A JP2021567342 A JP 2021567342A JP WO2021131967 A1 JPWO2021131967 A1 JP WO2021131967A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019231910 | 2019-12-23 | ||
| JP2019231910 | 2019-12-23 | ||
| PCT/JP2020/046972 WO2021131967A1 (ja) | 2019-12-23 | 2020-12-16 | AlN積層板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021131967A1 true JPWO2021131967A1 (https=) | 2021-07-01 |
| JPWO2021131967A5 JPWO2021131967A5 (https=) | 2022-08-19 |
| JP7700051B2 JP7700051B2 (ja) | 2025-06-30 |
Family
ID=76575915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021567342A Active JP7700051B2 (ja) | 2019-12-23 | 2020-12-16 | AlN積層板 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7700051B2 (https=) |
| WO (1) | WO2021131967A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009190960A (ja) * | 2008-01-16 | 2009-08-27 | Tokyo Univ Of Agriculture & Technology | 積層体およびその製造方法 |
| JP2010010613A (ja) * | 2008-06-30 | 2010-01-14 | Tokuyama Corp | 積層体、自立基板製造用基板、自立基板およびこれらの製造方法 |
| JP2010254499A (ja) * | 2009-04-22 | 2010-11-11 | Tokuyama Corp | Iii族窒化物結晶基板の製造方法 |
| JP2011020900A (ja) * | 2009-07-16 | 2011-02-03 | Tokuyama Corp | 窒化アルミニウム単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いた窒化アルミニウム単結晶基板の製造方法、および、窒化アルミニウム単結晶基板 |
| JP2016175816A (ja) * | 2015-03-23 | 2016-10-06 | Tdk株式会社 | アルミナ基板 |
-
2020
- 2020-12-16 WO PCT/JP2020/046972 patent/WO2021131967A1/ja not_active Ceased
- 2020-12-16 JP JP2021567342A patent/JP7700051B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009190960A (ja) * | 2008-01-16 | 2009-08-27 | Tokyo Univ Of Agriculture & Technology | 積層体およびその製造方法 |
| JP2010010613A (ja) * | 2008-06-30 | 2010-01-14 | Tokuyama Corp | 積層体、自立基板製造用基板、自立基板およびこれらの製造方法 |
| JP2010254499A (ja) * | 2009-04-22 | 2010-11-11 | Tokuyama Corp | Iii族窒化物結晶基板の製造方法 |
| JP2011020900A (ja) * | 2009-07-16 | 2011-02-03 | Tokuyama Corp | 窒化アルミニウム単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いた窒化アルミニウム単結晶基板の製造方法、および、窒化アルミニウム単結晶基板 |
| JP2016175816A (ja) * | 2015-03-23 | 2016-10-06 | Tdk株式会社 | アルミナ基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021131967A1 (ja) | 2021-07-01 |
| JP7700051B2 (ja) | 2025-06-30 |
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