JP7688816B2 - 半導体膜厚を制御する方法 - Google Patents

半導体膜厚を制御する方法 Download PDF

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Publication number
JP7688816B2
JP7688816B2 JP2023513933A JP2023513933A JP7688816B2 JP 7688816 B2 JP7688816 B2 JP 7688816B2 JP 2023513933 A JP2023513933 A JP 2023513933A JP 2023513933 A JP2023513933 A JP 2023513933A JP 7688816 B2 JP7688816 B2 JP 7688816B2
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Japan
Prior art keywords
resin film
substrate
film
overcoat film
solvent
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Japanese (ja)
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JP2023539512A5 (https=
JP2023539512A (ja
Inventor
フルフォード，ダニエル
マーフィー，マイケル
グルゼスコヴィアク，ジョディ
スミス，ジェフリー
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)
JP2023513933A 2020-09-01 2021-07-08 半導体膜厚を制御する方法 Active JP7688816B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063073047P 2020-09-01 2020-09-01
US63/073,047 2020-09-01
US17/125,609 2020-12-17
US17/125,609 US11656550B2 (en) 2020-09-01 2020-12-17 Controlling semiconductor film thickness
PCT/US2021/040788 WO2022051025A1 (en) 2020-09-01 2021-07-08 Controlling semiconductor film thickness

Publications (3)

Publication Number Publication Date
JP2023539512A JP2023539512A (ja) 2023-09-14
JP2023539512A5 JP2023539512A5 (https=) 2024-03-28
JP7688816B2 true JP7688816B2 (ja) 2025-06-05

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Application Number Title Priority Date Filing Date
JP2023513933A Active JP7688816B2 (ja) 2020-09-01 2021-07-08 半導体膜厚を制御する方法

Country Status (5)

Country Link
US (1) US11656550B2 (https=)
JP (1) JP7688816B2 (https=)
KR (1) KR20230058430A (https=)
TW (1) TWI881160B (https=)
WO (1) WO2022051025A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11776808B2 (en) * 2020-03-17 2023-10-03 Tokyo Electron Limited Planarization of spin-on films
US20240085795A1 (en) * 2022-09-13 2024-03-14 Tokyo Electron Limited Patterning a semiconductor workpiece
US12598747B2 (en) 2022-11-01 2026-04-07 Tokyo Electron Limited Fabricating three-dimensional semiconductor structures

Citations (4)

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JP2016539362A (ja) 2013-11-08 2016-12-15 東京エレクトロン株式会社 化学的研磨平坦化の方法
JP2017506428A (ja) 2014-01-28 2017-03-02 東京エレクトロン株式会社 原子層堆積を用いずに自己整合ダブルパターニングを行う方法
JP2018516385A (ja) 2015-04-13 2018-06-21 東京エレクトロン株式会社 基板を平坦化するためのシステム及び方法
WO2020160016A1 (en) 2019-01-29 2020-08-06 Lam Research Corporation Sacrificial protection layer for environmentally sensitive surfaces of substrates

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US20070138699A1 (en) 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
JP2009042582A (ja) 2007-08-10 2009-02-26 Tokyo Ohka Kogyo Co Ltd 微細パターン形成方法及び被覆膜形成用材料
KR101439394B1 (ko) * 2008-05-02 2014-09-15 삼성전자주식회사 산 확산을 이용하는 더블 패터닝 공정에 의한 반도체소자의 미세 패턴 형성 방법
US20100015550A1 (en) * 2008-07-17 2010-01-21 Weihong Liu Dual damascene via filling composition
JP5011345B2 (ja) * 2009-05-15 2012-08-29 東京エレクトロン株式会社 レジストパターンのスリミング処理方法
US9081277B2 (en) * 2010-12-24 2015-07-14 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition
US8790867B2 (en) 2011-11-03 2014-07-29 Rohm And Haas Electronic Materials Llc Methods of forming photolithographic patterns by negative tone development
US10090376B2 (en) 2013-10-29 2018-10-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and methods of forming capacitor structures
KR102193680B1 (ko) * 2014-08-14 2020-12-21 삼성전자주식회사 반도체 소자의 제조 방법
TWI582536B (zh) 2014-10-31 2017-05-11 羅門哈斯電子材料有限公司 圖案形成方法
KR102344900B1 (ko) * 2015-04-12 2021-12-28 도쿄엘렉트론가부시키가이샤 오픈 피처 내에 유전체 절연 구조를 생성하기 위한 차감 방법
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JP2016539362A (ja) 2013-11-08 2016-12-15 東京エレクトロン株式会社 化学的研磨平坦化の方法
JP2017506428A (ja) 2014-01-28 2017-03-02 東京エレクトロン株式会社 原子層堆積を用いずに自己整合ダブルパターニングを行う方法
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WO2020160016A1 (en) 2019-01-29 2020-08-06 Lam Research Corporation Sacrificial protection layer for environmentally sensitive surfaces of substrates

Also Published As

Publication number Publication date
TW202226337A (zh) 2022-07-01
WO2022051025A1 (en) 2022-03-10
TWI881160B (zh) 2025-04-21
US11656550B2 (en) 2023-05-23
US20220066317A1 (en) 2022-03-03
KR20230058430A (ko) 2023-05-03
JP2023539512A (ja) 2023-09-14

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