KR20230058430A - 반도체 막 두께 제어 - Google Patents

반도체 막 두께 제어 Download PDF

Info

Publication number
KR20230058430A
KR20230058430A KR1020237009232A KR20237009232A KR20230058430A KR 20230058430 A KR20230058430 A KR 20230058430A KR 1020237009232 A KR1020237009232 A KR 1020237009232A KR 20237009232 A KR20237009232 A KR 20237009232A KR 20230058430 A KR20230058430 A KR 20230058430A
Authority
KR
South Korea
Prior art keywords
resin film
film
recess
substrate
soluble
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237009232A
Other languages
English (en)
Korean (ko)
Inventor
다니엘 풀포드
마이클 머피
조디 그르제스코위악
제프리 스미스
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20230058430A publication Critical patent/KR20230058430A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H01L21/0271—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H01L21/0337—
    • H01L21/31133—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)
KR1020237009232A 2020-09-01 2021-07-08 반도체 막 두께 제어 Pending KR20230058430A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202063073047P 2020-09-01 2020-09-01
US63/073,047 2020-09-01
US17/125,609 2020-12-17
US17/125,609 US11656550B2 (en) 2020-09-01 2020-12-17 Controlling semiconductor film thickness
PCT/US2021/040788 WO2022051025A1 (en) 2020-09-01 2021-07-08 Controlling semiconductor film thickness

Publications (1)

Publication Number Publication Date
KR20230058430A true KR20230058430A (ko) 2023-05-03

Family

ID=80356605

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237009232A Pending KR20230058430A (ko) 2020-09-01 2021-07-08 반도체 막 두께 제어

Country Status (5)

Country Link
US (1) US11656550B2 (https=)
JP (1) JP7688816B2 (https=)
KR (1) KR20230058430A (https=)
TW (1) TWI881160B (https=)
WO (1) WO2022051025A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11776808B2 (en) * 2020-03-17 2023-10-03 Tokyo Electron Limited Planarization of spin-on films
US20240085795A1 (en) * 2022-09-13 2024-03-14 Tokyo Electron Limited Patterning a semiconductor workpiece
US12598747B2 (en) 2022-11-01 2026-04-07 Tokyo Electron Limited Fabricating three-dimensional semiconductor structures

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20070138699A1 (en) 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
JP2009042582A (ja) 2007-08-10 2009-02-26 Tokyo Ohka Kogyo Co Ltd 微細パターン形成方法及び被覆膜形成用材料
KR101439394B1 (ko) * 2008-05-02 2014-09-15 삼성전자주식회사 산 확산을 이용하는 더블 패터닝 공정에 의한 반도체소자의 미세 패턴 형성 방법
US20100015550A1 (en) * 2008-07-17 2010-01-21 Weihong Liu Dual damascene via filling composition
JP5011345B2 (ja) * 2009-05-15 2012-08-29 東京エレクトロン株式会社 レジストパターンのスリミング処理方法
US9081277B2 (en) * 2010-12-24 2015-07-14 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition
US8790867B2 (en) 2011-11-03 2014-07-29 Rohm And Haas Electronic Materials Llc Methods of forming photolithographic patterns by negative tone development
US10090376B2 (en) 2013-10-29 2018-10-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and methods of forming capacitor structures
KR20160083080A (ko) * 2013-11-08 2016-07-11 도쿄엘렉트론가부시키가이샤 화학적 폴리싱 및 평탄화를 위한 방법
JP6196739B2 (ja) * 2014-01-28 2017-09-13 東京エレクトロン株式会社 原子層堆積を用いずに自己整合ダブルパターニングを行う方法
KR102193680B1 (ko) * 2014-08-14 2020-12-21 삼성전자주식회사 반도체 소자의 제조 방법
TWI582536B (zh) 2014-10-31 2017-05-11 羅門哈斯電子材料有限公司 圖案形成方法
KR102344900B1 (ko) * 2015-04-12 2021-12-28 도쿄엘렉트론가부시키가이샤 오픈 피처 내에 유전체 절연 구조를 생성하기 위한 차감 방법
US10338466B2 (en) * 2015-04-13 2019-07-02 Tokyo Electron Limited System and method for planarizing a substrate
US10061199B2 (en) 2015-06-24 2018-08-28 Tokyo Electron Limited Methods of forming a mask for substrate patterning
TWI707400B (zh) 2016-02-24 2020-10-11 日商日產化學工業股份有限公司 使用含矽組成物之半導體基板之平坦化方法
US9869933B2 (en) * 2016-03-07 2018-01-16 Rohm And Haas Electronic Materials Llc Pattern trimming methods
WO2017197288A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of a photo agent
US10241411B2 (en) 2016-10-31 2019-03-26 Rohm And Haas Electronic Materials Llc Topcoat compositions containing fluorinated thermal acid generators
US10684549B2 (en) 2016-12-31 2020-06-16 Rohm And Haas Electronic Materials Llc Pattern-formation methods
US11248086B2 (en) 2018-05-01 2022-02-15 Tokyo Ohka Kogyo Co., Ltd. Hard-mask forming composition and method for manufacturing electronic component
US11605538B2 (en) * 2018-10-31 2023-03-14 Taiwan Semiconductor Manufacturing Co., Ltd. Protective composition and method of forming photoresist pattern
US11393694B2 (en) 2018-11-13 2022-07-19 Tokyo Electron Limited Method for planarization of organic films
KR102890564B1 (ko) * 2019-01-29 2025-11-24 램 리써치 코포레이션 기판들의 환경에 민감한 표면들을 위한 희생적 보호 층
US20210294148A1 (en) * 2020-03-17 2021-09-23 Tokyo Electron Limited Planarizing Organic Films
JP2022099428A (ja) * 2020-12-23 2022-07-05 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 犠牲層の上部を除去する方法、それに用いられる犠牲溶液および酸性水溶液

Also Published As

Publication number Publication date
TW202226337A (zh) 2022-07-01
JP7688816B2 (ja) 2025-06-05
WO2022051025A1 (en) 2022-03-10
TWI881160B (zh) 2025-04-21
US11656550B2 (en) 2023-05-23
US20220066317A1 (en) 2022-03-03
JP2023539512A (ja) 2023-09-14

Similar Documents

Publication Publication Date Title
US10061199B2 (en) Methods of forming a mask for substrate patterning
US9406526B2 (en) Method for patterning contact openings on a substrate
KR20230058430A (ko) 반도체 막 두께 제어
KR20090115564A (ko) 산 확산을 이용하는 더블 패터닝 공정에 의한 반도체소자의 미세 패턴 형성 방법
KR20240148814A (ko) 염료 확산을 통한 선택적 탈보호
US7341939B2 (en) Method for patterning micro features by using developable bottom anti-reflection coating
US12488989B2 (en) Method to form narrow slot contacts
CN117546271A (zh) 经由使用双层系统的增强无冻结反间隔物形成去除材料覆盖层的方法
KR102933466B1 (ko) 자가-정렬 이중 패터닝을 위한 무동결 방법
KR102956177B1 (ko) 좁은 슬롯 접점을 형성하기 위한 방법
US20240419074A1 (en) Formation of sub-lithographic mandrel patterns using reversible overcoat

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000