JP7687514B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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JP7687514B2
JP7687514B2 JP2024500927A JP2024500927A JP7687514B2 JP 7687514 B2 JP7687514 B2 JP 7687514B2 JP 2024500927 A JP2024500927 A JP 2024500927A JP 2024500927 A JP2024500927 A JP 2024500927A JP 7687514 B2 JP7687514 B2 JP 7687514B2
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atomic density
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JPWO2023157330A1 (https=
JPWO2023157330A5 (https=
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泰典 阿形
尚 吉村
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Bipolar Transistors (AREA)
JP2024500927A 2022-02-17 2022-06-16 半導体装置およびその製造方法 Active JP7687514B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022022803 2022-02-17
JP2022022803 2022-02-17
PCT/JP2022/024121 WO2023157330A1 (ja) 2022-02-17 2022-06-16 半導体装置およびその製造方法

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JPWO2023157330A1 JPWO2023157330A1 (https=) 2023-08-24
JPWO2023157330A5 JPWO2023157330A5 (https=) 2024-04-19
JP7687514B2 true JP7687514B2 (ja) 2025-06-03

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US (1) US20240162287A1 (https=)
JP (1) JP7687514B2 (https=)
CN (1) CN117836952A (https=)
DE (1) DE112022002851T5 (https=)
WO (1) WO2023157330A1 (https=)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259779A (ja) 2004-03-09 2005-09-22 Shindengen Electric Mfg Co Ltd 半導体装置及びその製造方法
JP2007123469A (ja) 2005-10-27 2007-05-17 Toyota Central Res & Dev Lab Inc 半導体装置とその製造方法
WO2012056536A1 (ja) 2010-10-27 2012-05-03 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2012156207A (ja) 2011-01-24 2012-08-16 Mitsubishi Electric Corp 半導体装置と半導体装置の製造方法
JP2014107391A (ja) 2012-11-27 2014-06-09 Toyota Motor Corp 半導体装置とその製造方法
WO2014112228A1 (ja) 2013-01-18 2014-07-24 株式会社日立パワーデバイス ダイオード、電力変換装置
WO2015087439A1 (ja) 2013-12-13 2015-06-18 三菱電機株式会社 半導体装置の製造方法
WO2015118713A1 (ja) 2014-02-10 2015-08-13 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP2020043301A (ja) 2018-09-13 2020-03-19 株式会社デンソー 半導体装置
WO2020080295A1 (ja) 2018-10-18 2020-04-23 富士電機株式会社 半導体装置および製造方法
WO2021166980A1 (ja) 2020-02-18 2021-08-26 富士電機株式会社 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2996567B2 (ja) * 1992-10-30 2000-01-11 松下電子工業株式会社 固体撮像素子の製造方法
JP6112071B2 (ja) 2014-06-19 2017-04-12 トヨタ自動車株式会社 半導体装置の製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259779A (ja) 2004-03-09 2005-09-22 Shindengen Electric Mfg Co Ltd 半導体装置及びその製造方法
JP2007123469A (ja) 2005-10-27 2007-05-17 Toyota Central Res & Dev Lab Inc 半導体装置とその製造方法
WO2012056536A1 (ja) 2010-10-27 2012-05-03 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2012156207A (ja) 2011-01-24 2012-08-16 Mitsubishi Electric Corp 半導体装置と半導体装置の製造方法
JP2014107391A (ja) 2012-11-27 2014-06-09 Toyota Motor Corp 半導体装置とその製造方法
WO2014112228A1 (ja) 2013-01-18 2014-07-24 株式会社日立パワーデバイス ダイオード、電力変換装置
WO2015087439A1 (ja) 2013-12-13 2015-06-18 三菱電機株式会社 半導体装置の製造方法
WO2015118713A1 (ja) 2014-02-10 2015-08-13 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP2020043301A (ja) 2018-09-13 2020-03-19 株式会社デンソー 半導体装置
WO2020080295A1 (ja) 2018-10-18 2020-04-23 富士電機株式会社 半導体装置および製造方法
WO2021166980A1 (ja) 2020-02-18 2021-08-26 富士電機株式会社 半導体装置

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JPWO2023157330A1 (https=) 2023-08-24
WO2023157330A1 (ja) 2023-08-24
CN117836952A (zh) 2024-04-05
US20240162287A1 (en) 2024-05-16
DE112022002851T5 (de) 2024-03-14

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