JP7682379B2 - 接合体および弾性波素子 - Google Patents

接合体および弾性波素子 Download PDF

Info

Publication number
JP7682379B2
JP7682379B2 JP2024511194A JP2024511194A JP7682379B2 JP 7682379 B2 JP7682379 B2 JP 7682379B2 JP 2024511194 A JP2024511194 A JP 2024511194A JP 2024511194 A JP2024511194 A JP 2024511194A JP 7682379 B2 JP7682379 B2 JP 7682379B2
Authority
JP
Japan
Prior art keywords
piezoelectric material
layer
material layer
substrate
argon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024511194A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023188514A5 (https=
JPWO2023188514A1 (https=
Inventor
祐葵 伊藤
泰士 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2023188514A1 publication Critical patent/JPWO2023188514A1/ja
Publication of JPWO2023188514A5 publication Critical patent/JPWO2023188514A5/ja
Priority to JP2025080369A priority Critical patent/JP7811679B2/ja
Application granted granted Critical
Publication of JP7682379B2 publication Critical patent/JP7682379B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25Constructional features of resonators using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02559Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02574Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2024511194A 2022-03-30 2022-11-10 接合体および弾性波素子 Active JP7682379B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025080369A JP7811679B2 (ja) 2022-03-30 2025-05-13 接合体および弾性波素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022056518 2022-03-30
JP2022056518 2022-03-30
PCT/JP2022/041912 WO2023188514A1 (ja) 2022-03-30 2022-11-10 接合体および弾性波素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025080369A Division JP7811679B2 (ja) 2022-03-30 2025-05-13 接合体および弾性波素子

Publications (3)

Publication Number Publication Date
JPWO2023188514A1 JPWO2023188514A1 (https=) 2023-10-05
JPWO2023188514A5 JPWO2023188514A5 (https=) 2024-10-10
JP7682379B2 true JP7682379B2 (ja) 2025-05-23

Family

ID=88199939

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2024511194A Active JP7682379B2 (ja) 2022-03-30 2022-11-10 接合体および弾性波素子
JP2025080369A Active JP7811679B2 (ja) 2022-03-30 2025-05-13 接合体および弾性波素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025080369A Active JP7811679B2 (ja) 2022-03-30 2025-05-13 接合体および弾性波素子

Country Status (6)

Country Link
US (1) US20250023551A1 (https=)
JP (2) JP7682379B2 (https=)
KR (1) KR102937541B1 (https=)
CN (1) CN118872204A (https=)
DE (1) DE112022006665T5 (https=)
WO (1) WO2023188514A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20260052906A1 (en) * 2024-08-16 2026-02-19 Tel Manufacturing And Engineering Of America, Inc. Method for processing a substrate

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011171359A (ja) 2010-02-16 2011-09-01 Hitachi Cable Ltd 圧電薄膜素子及び圧電薄膜デバイス
US20180175826A1 (en) 2016-12-15 2018-06-21 Qorvo Us, Inc. Bulk acoustic wave resonator with multilayer piezoelectric structure
JP2020182137A (ja) 2019-04-26 2020-11-05 京セラ株式会社 弾性波装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06303073A (ja) * 1993-02-17 1994-10-28 Fujitsu Ltd 弾性表面波デバイスとその製造方法
JPH07202631A (ja) * 1993-11-25 1995-08-04 Fujitsu Ltd 弾性表面波装置及びその製造方法
WO2020250490A1 (ja) 2019-06-11 2020-12-17 日本碍子株式会社 複合基板、弾性波素子および複合基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011171359A (ja) 2010-02-16 2011-09-01 Hitachi Cable Ltd 圧電薄膜素子及び圧電薄膜デバイス
US20180175826A1 (en) 2016-12-15 2018-06-21 Qorvo Us, Inc. Bulk acoustic wave resonator with multilayer piezoelectric structure
JP2020182137A (ja) 2019-04-26 2020-11-05 京セラ株式会社 弾性波装置

Also Published As

Publication number Publication date
JP7811679B2 (ja) 2026-02-05
KR20240167884A (ko) 2024-11-28
US20250023551A1 (en) 2025-01-16
JP2025107428A (ja) 2025-07-17
JPWO2023188514A1 (https=) 2023-10-05
KR102937541B1 (ko) 2026-03-10
CN118872204A (zh) 2024-10-29
WO2023188514A1 (ja) 2023-10-05
DE112022006665T5 (de) 2024-12-12

Similar Documents

Publication Publication Date Title
JP6375471B1 (ja) 接合体および弾性波素子
KR102428548B1 (ko) 접합 방법
KR102123350B1 (ko) 탄성파 소자 및 그 제조 방법
JP7133031B2 (ja) 接合体および弾性波素子
JP7069338B2 (ja) 接合体および弾性波素子
JPWO2017163723A1 (ja) 接合方法
KR102222096B1 (ko) 탄성파 소자 및 그 제조 방법
JP6850401B1 (ja) 接合体および弾性波素子
JP7811679B2 (ja) 接合体および弾性波素子
JPWO2018096797A1 (ja) 接合体
JP6605184B1 (ja) 接合体および弾性波素子
JP6393015B1 (ja) 弾性波素子およびその製造方法
JP6612002B1 (ja) 接合体および弾性波素子
JPWO2021002046A1 (ja) 接合体および弾性波素子
WO2022054372A1 (ja) 弾性波デバイス用複合基板
TWI743700B (zh) 4g頻帶用彈性表面波元件
CN114731150A (zh) 压电性材料基板与支撑基板的接合体
JPWO2019244461A1 (ja) 接合体および弾性波素子

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240501

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241002

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250314

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250414

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250513

R150 Certificate of patent or registration of utility model

Ref document number: 7682379

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150