JP7679412B2 - 光電変換装置、光電変換システム、および移動体 - Google Patents

光電変換装置、光電変換システム、および移動体 Download PDF

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JP7679412B2
JP7679412B2 JP2023021653A JP2023021653A JP7679412B2 JP 7679412 B2 JP7679412 B2 JP 7679412B2 JP 2023021653 A JP2023021653 A JP 2023021653A JP 2023021653 A JP2023021653 A JP 2023021653A JP 7679412 B2 JP7679412 B2 JP 7679412B2
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metal
photoelectric conversion
wiring
semiconductor element
wiring pattern
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JP2023065467A (ja
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裕介 大貫
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60W—CONJOINT CONTROL OF VEHICLE SUB-UNITS OF DIFFERENT TYPE OR DIFFERENT FUNCTION; CONTROL SYSTEMS SPECIALLY ADAPTED FOR HYBRID VEHICLES; ROAD VEHICLE DRIVE CONTROL SYSTEMS FOR PURPOSES NOT RELATED TO THE CONTROL OF A PARTICULAR SUB-UNIT
    • B60W30/00—Purposes of road vehicle drive control systems not related to the control of a particular sub-unit, e.g. of systems using conjoint control of vehicle sub-units
    • B60W30/08—Active safety systems predicting or avoiding probable or impending collision or attempting to minimise its consequences
    • B60W30/09—Taking automatic action to avoid collision, e.g. braking and steering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60W—CONJOINT CONTROL OF VEHICLE SUB-UNITS OF DIFFERENT TYPE OR DIFFERENT FUNCTION; CONTROL SYSTEMS SPECIALLY ADAPTED FOR HYBRID VEHICLES; ROAD VEHICLE DRIVE CONTROL SYSTEMS FOR PURPOSES NOT RELATED TO THE CONTROL OF A PARTICULAR SUB-UNIT
    • B60W2554/00—Input parameters relating to objects
    • B60W2554/80—Spatial relation or speed relative to objects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/961—Functions of bonds pads
    • H10W72/963—Providing mechanical bonding or support, e.g. dummy bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/961—Functions of bonds pads
    • H10W72/965—Providing thermal transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/961—Functions of bonds pads
    • H10W72/967—Multiple bond pads having different functions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H10W80/743—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having disposition changed during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

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  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Transportation (AREA)
  • Mechanical Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2023021653A 2020-03-31 2023-02-15 光電変換装置、光電変換システム、および移動体 Active JP7679412B2 (ja)

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JP2020063833 2020-03-31
JP2020063833 2020-03-31
JP2020191737 2020-11-18
JP2020191737 2020-11-18
JP2021017514A JP2022007971A (ja) 2020-03-31 2021-02-05 光電変換装置、光電変換システム、および移動体

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Publication number Priority date Publication date Assignee Title
JP7558822B2 (ja) 2020-10-29 2024-10-01 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP7427646B2 (ja) * 2021-12-07 2024-02-05 キヤノン株式会社 光電変換装置、光電変換システム、移動体
WO2023132001A1 (ja) * 2022-01-05 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099470A (ja) 2012-11-13 2014-05-29 Fujitsu Ltd 半導体装置および半導体集積回路装置、電子装置
US20160086869A1 (en) 2013-05-14 2016-03-24 Siliconfile Technologies Inc. Semiconductor device having improved heat-dissipation characteristics
JP2018182038A (ja) 2017-04-12 2018-11-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP2019102619A (ja) 2017-11-30 2019-06-24 キヤノン株式会社 半導体装置および機器
JP2019140237A (ja) 2018-02-09 2019-08-22 キヤノン株式会社 光電変換装置および撮像システム
JP2019140253A (ja) 2018-02-09 2019-08-22 キヤノン株式会社 半導体装置、半導体装置の製造方法
US20200020684A1 (en) 2018-07-15 2020-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. 3dic structure and method of fabricating the same
WO2020044943A1 (ja) 2018-08-31 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 半導体装置

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP5111157B2 (ja) 2008-02-27 2012-12-26 キヤノン株式会社 光電変換装置及び光電変換装置を用いた撮像システム
JP5919653B2 (ja) * 2011-06-09 2016-05-18 ソニー株式会社 半導体装置
JP2015041677A (ja) 2013-08-21 2015-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JPWO2017038403A1 (ja) 2015-09-01 2018-08-16 ソニー株式会社 積層体
JP6701108B2 (ja) 2017-03-21 2020-05-27 キヤノン株式会社 固体撮像装置及び撮像システム
JP6991816B2 (ja) 2017-09-29 2022-01-13 キヤノン株式会社 半導体装置および機器
JP7102119B2 (ja) 2017-09-29 2022-07-19 キヤノン株式会社 半導体装置および機器
JP2019153675A (ja) 2018-03-02 2019-09-12 ルネサスエレクトロニクス株式会社 固体撮像装置およびその製造方法
JP7356214B2 (ja) * 2018-09-04 2023-10-04 キヤノン株式会社 撮像装置、その製造方法及びカメラ
JP2020068289A (ja) * 2018-10-24 2020-04-30 キヤノン株式会社 光電変換装置、撮像システム、移動体、および積層用の半導体チップ
JP7562306B2 (ja) * 2020-06-23 2024-10-07 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014099470A (ja) 2012-11-13 2014-05-29 Fujitsu Ltd 半導体装置および半導体集積回路装置、電子装置
US20160086869A1 (en) 2013-05-14 2016-03-24 Siliconfile Technologies Inc. Semiconductor device having improved heat-dissipation characteristics
JP2018182038A (ja) 2017-04-12 2018-11-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP2019102619A (ja) 2017-11-30 2019-06-24 キヤノン株式会社 半導体装置および機器
JP2019140237A (ja) 2018-02-09 2019-08-22 キヤノン株式会社 光電変換装置および撮像システム
JP2019140253A (ja) 2018-02-09 2019-08-22 キヤノン株式会社 半導体装置、半導体装置の製造方法
US20200020684A1 (en) 2018-07-15 2020-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. 3dic structure and method of fabricating the same
WO2020044943A1 (ja) 2018-08-31 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 半導体装置

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JP2023065467A (ja) 2023-05-12
US20210305303A1 (en) 2021-09-30
CN113473050A (zh) 2021-10-01
EP3890018A1 (en) 2021-10-06
JP2025109739A (ja) 2025-07-25
US12604554B2 (en) 2026-04-14
CN113473050B (zh) 2024-11-01

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