JP7671752B2 - 太陽電池 - Google Patents

太陽電池 Download PDF

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Publication number
JP7671752B2
JP7671752B2 JP2022532486A JP2022532486A JP7671752B2 JP 7671752 B2 JP7671752 B2 JP 7671752B2 JP 2022532486 A JP2022532486 A JP 2022532486A JP 2022532486 A JP2022532486 A JP 2022532486A JP 7671752 B2 JP7671752 B2 JP 7671752B2
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JP
Japan
Prior art keywords
solar cell
hole transport
layer
electrode
photoelectric conversion
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JP2022532486A
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Japanese (ja)
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JPWO2021261190A1 (https=
JPWO2021261190A5 (https=
Inventor
太佑 松井
健之 関本
孝史 西原
輝明 山本
隆介 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/658—Organoboranes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
JP2022532486A 2020-06-24 2021-06-02 太陽電池 Active JP7671752B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020109179 2020-06-24
JP2020109179 2020-06-24
PCT/JP2021/021041 WO2021261190A1 (ja) 2020-06-24 2021-06-02 太陽電池

Publications (3)

Publication Number Publication Date
JPWO2021261190A1 JPWO2021261190A1 (https=) 2021-12-30
JPWO2021261190A5 JPWO2021261190A5 (https=) 2023-03-10
JP7671752B2 true JP7671752B2 (ja) 2025-05-02

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JP2022532486A Active JP7671752B2 (ja) 2020-06-24 2021-06-02 太陽電池

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US (1) US12120895B2 (https=)
EP (1) EP4174970A4 (https=)
JP (1) JP7671752B2 (https=)
CN (1) CN115700037A (https=)
WO (1) WO2021261190A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117377367A (zh) * 2022-06-27 2024-01-09 隆基绿能科技股份有限公司 一种太阳能电池及其制备方法
CN115942760A (zh) * 2023-02-14 2023-04-07 中国科学院化学研究所 一种改进的钙钛矿太阳能电池及制备方法
WO2025216132A1 (ja) * 2024-04-09 2025-10-16 京セラ株式会社 正孔輸送層、太陽電池素子および太陽電池モジュール

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220248A (ja) 2014-06-25 2014-11-20 三菱化学株式会社 有機電界発光素子の製造方法
JP2016051891A (ja) 2014-08-28 2016-04-11 公立大学法人 滋賀県立大学 太陽電池およびその太陽電池の製造方法
JP2018085497A (ja) 2016-11-16 2018-05-31 ペクセル・テクノロジーズ株式会社 光電変換素子
JP2019071500A (ja) 2019-02-15 2019-05-09 株式会社東芝 光電変換素子の製造方法
JP2019075487A (ja) 2017-10-18 2019-05-16 公立大学法人 滋賀県立大学 太陽電池およびその太陽電池の製造方法
JP2019134159A (ja) 2018-02-01 2019-08-08 パナソニック株式会社 太陽電池
WO2019182058A1 (ja) 2018-03-20 2019-09-26 国立大学法人京都大学 Ｓｎ系ペロブスカイト層及び太陽電池の製造方法
CN111223990A (zh) 2019-11-29 2020-06-02 西南石油大学 含碱金属卤化物空穴修饰层的反型钙钛矿太阳能电池及制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL3084854T3 (pl) * 2013-12-17 2020-07-13 Oxford University Innovation Limited Urządzenie fotowoltaiczne zawierające perowskit halogenku metalu i środek pasywujący
JP6486737B2 (ja) * 2015-03-19 2019-03-20 株式会社東芝 光電変換素子
CN111063809A (zh) * 2015-08-14 2020-04-24 陕西师范大学 一种钙钛矿太阳能电池及其制备方法
KR102052415B1 (ko) * 2017-11-08 2019-12-05 고려대학교 산학협력단 결정성 공액 고분자 기반 정공수송층을 포함하는 페로브스카이트 태양전지
CN108922971B (zh) * 2018-06-30 2020-04-17 中国科学院上海硅酸盐研究所 一种快速提升基于有机空穴传输层钙钛矿太阳能电池性能的工艺

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220248A (ja) 2014-06-25 2014-11-20 三菱化学株式会社 有機電界発光素子の製造方法
JP2016051891A (ja) 2014-08-28 2016-04-11 公立大学法人 滋賀県立大学 太陽電池およびその太陽電池の製造方法
JP2018085497A (ja) 2016-11-16 2018-05-31 ペクセル・テクノロジーズ株式会社 光電変換素子
JP2019075487A (ja) 2017-10-18 2019-05-16 公立大学法人 滋賀県立大学 太陽電池およびその太陽電池の製造方法
JP2019134159A (ja) 2018-02-01 2019-08-08 パナソニック株式会社 太陽電池
WO2019182058A1 (ja) 2018-03-20 2019-09-26 国立大学法人京都大学 Ｓｎ系ペロブスカイト層及び太陽電池の製造方法
JP2019071500A (ja) 2019-02-15 2019-05-09 株式会社東芝 光電変換素子の製造方法
CN111223990A (zh) 2019-11-29 2020-06-02 西南石油大学 含碱金属卤化物空穴修饰层的反型钙钛矿太阳能电池及制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NISHIHARA, Yoshihiko et al.，Influence of p-type doping on perovskite solar cells fabricated with dithiophene-benzene copolymer as the hole-transporting layer，J. Appl. Phys.，2020年02月28日，59, SGGF08 (2020)，pp.SGGF08-1 - SGGF08-9，https://doi.org/10.7567/1347-4065/ab645d

Also Published As

Publication number Publication date
CN115700037A (zh) 2023-02-03
JPWO2021261190A1 (https=) 2021-12-30
EP4174970A4 (en) 2023-11-29
US12120895B2 (en) 2024-10-15
EP4174970A1 (en) 2023-05-03
WO2021261190A1 (ja) 2021-12-30
US20230088816A1 (en) 2023-03-23

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