WO2021261190A1 - 太陽電池 - Google Patents

太陽電池 Download PDF

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Publication number
WO2021261190A1
WO2021261190A1 PCT/JP2021/021041 JP2021021041W WO2021261190A1 WO 2021261190 A1 WO2021261190 A1 WO 2021261190A1 JP 2021021041 W JP2021021041 W JP 2021021041W WO 2021261190 A1 WO2021261190 A1 WO 2021261190A1
Authority
WO
WIPO (PCT)
Prior art keywords
hole transport
solar cell
layer
electrode
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/021041
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
太佑 松井
健之 関本
孝史 西原
輝明 山本
隆介 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to EP21827933.9A priority Critical patent/EP4174970A4/en
Priority to CN202180040466.2A priority patent/CN115700037A/zh
Priority to JP2022532486A priority patent/JP7671752B2/ja
Publication of WO2021261190A1 publication Critical patent/WO2021261190A1/ja
Priority to US18/059,917 priority patent/US12120895B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/658—Organoboranes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the solar cell of the present disclosure is A first electrode, a photoelectric conversion layer, an intermediate layer, a hole transport layer, and a second electrode are provided in this order, and here,
  • the hole transport layer contains a hole transport material and an oxidizing agent.
  • the photoelectric conversion layer contains a perovskite compound containing iodine, and the intermediate layer contains at least one selected from the group consisting of bromide, chloride, and fluoride.
  • the perovskite solar cell of the present disclosure may include an electron transport layer between the first electrode and the photoelectric conversion layer.
  • FIG. 2 shows a cross-sectional view of a modified example of the solar cell according to the first embodiment.
  • the first electrode 2 may be formed by using a non-transparent material and providing a pattern through which light is transmitted.
  • Examples of light-transmitting patterns are linear (striped), wavy, grid-like (ie, mesh-like), or punch-metal patterns with a large number of fine through-holes arranged regularly or irregularly. Is. When the first electrode 2 has these patterns, light can be transmitted through a portion where the electrode material does not exist.
  • Examples of non-transparent materials are platinum, gold, silver, copper, aluminum, rhodium, indium, titanium, iron, nickel, tin, zinc, or alloys containing any of these.
  • a conductive carbon material may be used as the non-transparent material.
  • An example of the method for forming the hole transport layer 5 is a coating method or a printing method.
  • coating methods are doctor blade method, bar coating method, spray method, dip coating method, or spin coating method.
  • An example of a printing method is a screen printing method.
  • the hole transport layer 5 may be formed by pressurizing or firing a film obtained by mixing a plurality of materials.
  • the hole transport material is a small molecule organic substance or an inorganic semiconductor
  • the hole transport layer 5 may be formed by a vacuum vapor deposition method.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
PCT/JP2021/021041 2020-06-24 2021-06-02 太陽電池 Ceased WO2021261190A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP21827933.9A EP4174970A4 (en) 2020-06-24 2021-06-02 Solar cell
CN202180040466.2A CN115700037A (zh) 2020-06-24 2021-06-02 太阳能电池
JP2022532486A JP7671752B2 (ja) 2020-06-24 2021-06-02 太陽電池
US18/059,917 US12120895B2 (en) 2020-06-24 2022-11-29 Solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020109179 2020-06-24
JP2020-109179 2020-06-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/059,917 Continuation US12120895B2 (en) 2020-06-24 2022-11-29 Solar cell

Publications (1)

Publication Number Publication Date
WO2021261190A1 true WO2021261190A1 (ja) 2021-12-30

Family

ID=79282548

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/021041 Ceased WO2021261190A1 (ja) 2020-06-24 2021-06-02 太陽電池

Country Status (5)

Country Link
US (1) US12120895B2 (https=)
EP (1) EP4174970A4 (https=)
JP (1) JP7671752B2 (https=)
CN (1) CN115700037A (https=)
WO (1) WO2021261190A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117377367A (zh) * 2022-06-27 2024-01-09 隆基绿能科技股份有限公司 一种太阳能电池及其制备方法
WO2025216132A1 (ja) * 2024-04-09 2025-10-16 京セラ株式会社 正孔輸送層、太陽電池素子および太陽電池モジュール

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115942760A (zh) * 2023-02-14 2023-04-07 中国科学院化学研究所 一种改进的钙钛矿太阳能电池及制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220248A (ja) * 2014-06-25 2014-11-20 三菱化学株式会社 有機電界発光素子の製造方法
JP2016178156A (ja) * 2015-03-19 2016-10-06 株式会社東芝 光電変換素子
JP2018085497A (ja) * 2016-11-16 2018-05-31 ペクセル・テクノロジーズ株式会社 光電変換素子
WO2019182058A1 (ja) * 2018-03-20 2019-09-26 国立大学法人京都大学 Ｓｎ系ペロブスカイト層及び太陽電池の製造方法
CN111223990A (zh) * 2019-11-29 2020-06-02 西南石油大学 含碱金属卤化物空穴修饰层的反型钙钛矿太阳能电池及制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
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PL3084854T3 (pl) * 2013-12-17 2020-07-13 Oxford University Innovation Limited Urządzenie fotowoltaiczne zawierające perowskit halogenku metalu i środek pasywujący
JP2016051891A (ja) 2014-08-28 2016-04-11 公立大学法人 滋賀県立大学 太陽電池およびその太陽電池の製造方法
CN111063809A (zh) * 2015-08-14 2020-04-24 陕西师范大学 一种钙钛矿太阳能电池及其制备方法
JP2019075487A (ja) 2017-10-18 2019-05-16 公立大学法人 滋賀県立大学 太陽電池およびその太陽電池の製造方法
KR102052415B1 (ko) * 2017-11-08 2019-12-05 고려대학교 산학협력단 결정성 공액 고분자 기반 정공수송층을 포함하는 페로브스카이트 태양전지
US10573766B2 (en) 2018-02-01 2020-02-25 Panasonic Corporation Solar cell
CN108922971B (zh) * 2018-06-30 2020-04-17 中国科学院上海硅酸盐研究所 一种快速提升基于有机空穴传输层钙钛矿太阳能电池性能的工艺
JP6675505B2 (ja) 2019-02-15 2020-04-01 株式会社東芝 光電変換素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014220248A (ja) * 2014-06-25 2014-11-20 三菱化学株式会社 有機電界発光素子の製造方法
JP2016178156A (ja) * 2015-03-19 2016-10-06 株式会社東芝 光電変換素子
JP2018085497A (ja) * 2016-11-16 2018-05-31 ペクセル・テクノロジーズ株式会社 光電変換素子
WO2019182058A1 (ja) * 2018-03-20 2019-09-26 国立大学法人京都大学 Ｓｎ系ペロブスカイト層及び太陽電池の製造方法
CN111223990A (zh) * 2019-11-29 2020-06-02 西南石油大学 含碱金属卤化物空穴修饰层的反型钙钛矿太阳能电池及制备方法

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
"An interface stabilized perovskite solar cell with high stabilized efficiency and low voltage loss", ENERGY ENVIRON. SCI., vol. 12, 2019, pages 2192 - 2199
"Ionic Reactivity at Contacts and Aging of Methylammonium Lead Triiodide Perovskite Solar Cells", ADV. ENERGY MATER., vol. 6, pages 1502246
"Sequential deposition as a route to high-performance perovskite-sensitized solar cells", NATURE, vol. 499, 18 July 2013 (2013-07-18)
"Surface passivation of perovskite film for efficient solar cells", NATURE PHOTONICS, vol. 13, 2019, pages 460 - 466
See also references of EP4174970A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117377367A (zh) * 2022-06-27 2024-01-09 隆基绿能科技股份有限公司 一种太阳能电池及其制备方法
WO2025216132A1 (ja) * 2024-04-09 2025-10-16 京セラ株式会社 正孔輸送層、太陽電池素子および太陽電池モジュール

Also Published As

Publication number Publication date
JP7671752B2 (ja) 2025-05-02
CN115700037A (zh) 2023-02-03
JPWO2021261190A1 (https=) 2021-12-30
EP4174970A4 (en) 2023-11-29
US12120895B2 (en) 2024-10-15
EP4174970A1 (en) 2023-05-03
US20230088816A1 (en) 2023-03-23

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