JP7671743B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7671743B2
JP7671743B2 JP2022519950A JP2022519950A JP7671743B2 JP 7671743 B2 JP7671743 B2 JP 7671743B2 JP 2022519950 A JP2022519950 A JP 2022519950A JP 2022519950 A JP2022519950 A JP 2022519950A JP 7671743 B2 JP7671743 B2 JP 7671743B2
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electrode
gate
semiconductor device
view
pad
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JPWO2021225119A1 (https=
Inventor
佑紀 中野
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Rohm Co Ltd
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Rohm Co Ltd
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    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
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    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/669—Vertical DMOS [VDMOS] FETs having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells
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    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
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    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
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JP2022519950A 2020-05-08 2021-04-30 半導体装置 Active JP7671743B2 (ja)

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JP2020082750 2020-05-08
JP2020082750 2020-05-08
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US (1) US20230352371A1 (https=)
JP (2) JP7671743B2 (https=)
CN (1) CN115485858A (https=)
DE (2) DE212021000197U1 (https=)
WO (1) WO2021225119A1 (https=)

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Publication number Priority date Publication date Assignee Title
JP7670694B2 (ja) * 2020-05-08 2025-04-30 ローム株式会社 半導体装置
US12477773B2 (en) 2020-09-17 2025-11-18 Rohm Co., Ltd. Semiconductor device including terminal electrodes
CN114512531A (zh) * 2020-11-16 2022-05-17 苏州东微半导体股份有限公司 碳化硅器件
WO2023080086A1 (ja) * 2021-11-05 2023-05-11 ローム株式会社 半導体装置
WO2023080087A1 (ja) * 2021-11-05 2023-05-11 ローム株式会社 半導体装置
US20240421230A1 (en) * 2023-06-14 2024-12-19 Microchip Technology Incorporated ELECTRONIC DEVICES WITH SUBSTRATES LESS THAN 50 µm THICK AND METHODS OF MANUFACTURE
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