JP7669508B2 - 発光装置および発光装置形成基板 - Google Patents

発光装置および発光装置形成基板 Download PDF

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Publication number
JP7669508B2
JP7669508B2 JP2023552709A JP2023552709A JP7669508B2 JP 7669508 B2 JP7669508 B2 JP 7669508B2 JP 2023552709 A JP2023552709 A JP 2023552709A JP 2023552709 A JP2023552709 A JP 2023552709A JP 7669508 B2 JP7669508 B2 JP 7669508B2
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layer
semiconductor layer
light
insulating
light emitting
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JPWO2023058308A1 (https=
JPWO2023058308A5 (https=
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逸 青木
眞澄 西村
拓海 金城
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Japan Display Inc
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Japan Display Inc
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
JP2023552709A 2021-10-05 2022-08-02 発光装置および発光装置形成基板 Active JP7669508B2 (ja)

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JP2025067434A JP2025096595A (ja) 2021-10-05 2025-04-16 発光装置および発光装置形成基板

Applications Claiming Priority (3)

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JP2021164232 2021-10-05
JP2021164232 2021-10-05
PCT/JP2022/029693 WO2023058308A1 (ja) 2021-10-05 2022-08-02 発光装置および発光装置形成基板

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JPWO2023058308A1 JPWO2023058308A1 (https=) 2023-04-13
JPWO2023058308A5 JPWO2023058308A5 (https=) 2024-06-05
JP7669508B2 true JP7669508B2 (ja) 2025-04-28

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JP2025067434A Pending JP2025096595A (ja) 2021-10-05 2025-04-16 発光装置および発光装置形成基板

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US (1) US20240274752A1 (https=)
JP (2) JP7669508B2 (https=)
WO (1) WO2023058308A1 (https=)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269605A (ja) 1999-03-15 2000-09-29 Akihiko Yoshikawa 窒化ガリウム結晶を有する積層体およびその製造方法
JP2005044778A (ja) 2003-07-19 2005-02-17 Samsung Sdi Co Ltd 電界発光素子
JP2010500751A (ja) 2006-08-06 2010-01-07 ライトウェーブ フォトニクス インク． １以上の共振反射器を有するｉｉｉ族窒化物の発光デバイス、及び反射性を有するよう設計された上記デバイス用成長テンプレート及びその方法
CN103325893A (zh) 2013-06-25 2013-09-25 清华大学 基于非单晶衬底的GaN基LED外延片
JP2018512744A (ja) 2015-02-10 2018-05-17 アイビーム マテリアルズ，インク． Ｉｂａｄテクスチャ加工基板上のエピタキシャル六方晶材料
JP2018533220A (ja) 2015-11-10 2018-11-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体部品およびオプトエレクトロニクス半導体部品の製造方法
WO2019058467A1 (ja) 2017-09-20 2019-03-28 株式会社 東芝 エピタキシャル成長用基板、エピタキシャル成長用基板の製造方法、エピタキシャル基板及び半導体素子
US20190198313A1 (en) 2016-09-12 2019-06-27 University Of Houston System Flexible Single-Crystal Semiconductor Heterostructures and Methods of Making Thereof
JP2019129305A (ja) 2018-01-26 2019-08-01 鼎展電子股▲分▼有限公司 可撓性マイクロ発光ダイオード表示モジュール
WO2019168187A1 (ja) 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法
WO2020100290A1 (ja) 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法
JP2020517066A (ja) 2017-08-16 2020-06-11 クンシャン ゴー−ビシオノクス オプト−エレクトロニクス カンパニー リミテッドＫｕｎｓｈａｎ Ｇｏ−Ｖｉｓｉｏｎｏｘ Ｏｐｔｏ−Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．， Ｌｔｄ． 有機ｅｌ装置及びその電極

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710280A (en) * 1980-06-23 1982-01-19 Futaba Corp Gan light emitting element
DE3124456C2 (de) * 1980-06-23 1985-04-25 Futaba Denshi Kogyo K.K., Mobara, Chiba Halbleiterbauelement sowie Verfahren zu dessen Herstellung
JPS5710223A (en) * 1980-06-23 1982-01-19 Futaba Corp Semiconductor device
JPH0936427A (ja) * 1995-07-18 1997-02-07 Showa Denko Kk 半導体装置及びその製造方法
JP2000091628A (ja) * 1998-09-09 2000-03-31 Murata Mfg Co Ltd 半導体発光素子

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269605A (ja) 1999-03-15 2000-09-29 Akihiko Yoshikawa 窒化ガリウム結晶を有する積層体およびその製造方法
JP2005044778A (ja) 2003-07-19 2005-02-17 Samsung Sdi Co Ltd 電界発光素子
JP2010500751A (ja) 2006-08-06 2010-01-07 ライトウェーブ フォトニクス インク． １以上の共振反射器を有するｉｉｉ族窒化物の発光デバイス、及び反射性を有するよう設計された上記デバイス用成長テンプレート及びその方法
CN103325893A (zh) 2013-06-25 2013-09-25 清华大学 基于非单晶衬底的GaN基LED外延片
JP2018512744A (ja) 2015-02-10 2018-05-17 アイビーム マテリアルズ，インク． Ｉｂａｄテクスチャ加工基板上のエピタキシャル六方晶材料
JP2018533220A (ja) 2015-11-10 2018-11-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体部品およびオプトエレクトロニクス半導体部品の製造方法
US20190198313A1 (en) 2016-09-12 2019-06-27 University Of Houston System Flexible Single-Crystal Semiconductor Heterostructures and Methods of Making Thereof
JP2020517066A (ja) 2017-08-16 2020-06-11 クンシャン ゴー−ビシオノクス オプト−エレクトロニクス カンパニー リミテッドＫｕｎｓｈａｎ Ｇｏ−Ｖｉｓｉｏｎｏｘ Ｏｐｔｏ−Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．， Ｌｔｄ． 有機ｅｌ装置及びその電極
WO2019058467A1 (ja) 2017-09-20 2019-03-28 株式会社 東芝 エピタキシャル成長用基板、エピタキシャル成長用基板の製造方法、エピタキシャル基板及び半導体素子
JP2019129305A (ja) 2018-01-26 2019-08-01 鼎展電子股▲分▼有限公司 可撓性マイクロ発光ダイオード表示モジュール
WO2019168187A1 (ja) 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法
WO2020100290A1 (ja) 2018-11-16 2020-05-22 堺ディスプレイプロダクト株式会社 マイクロｌｅｄデバイスおよびその製造方法

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WO2023058308A1 (ja) 2023-04-13
JP2025096595A (ja) 2025-06-26
US20240274752A1 (en) 2024-08-15

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