JP7662339B2 - 極めて均一性が高い加熱基板支持アセンブリ - Google Patents

極めて均一性が高い加熱基板支持アセンブリ Download PDF

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Publication number
JP7662339B2
JP7662339B2 JP2020565321A JP2020565321A JP7662339B2 JP 7662339 B2 JP7662339 B2 JP 7662339B2 JP 2020565321 A JP2020565321 A JP 2020565321A JP 2020565321 A JP2020565321 A JP 2020565321A JP 7662339 B2 JP7662339 B2 JP 7662339B2
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Prior art keywords
substrate support
heater
support assembly
chuck body
substrate
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JP2021525454A5 (enExample
JP2021525454A (ja
Inventor
デーヴィッド ベンジャミンソン,
ヴィジェイ ディー. パーケ,
シッダラマイアー, オンカラ スワミー コラ
カービィ エイチ. フロイド,
ジャスティン ワン,
メフメト トゥグリル サミール,
ドミトリー ルボミルスキー,
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Applied Materials Inc
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Applied Materials Inc
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Priority to JP2021179166A priority Critical patent/JP7662489B2/ja
Publication of JP2021525454A5 publication Critical patent/JP2021525454A5/ja
Priority to JP2025001181A priority patent/JP2025072361A/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • H01J2237/3341Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
JP2020565321A 2018-05-31 2019-05-03 極めて均一性が高い加熱基板支持アセンブリ Active JP7662339B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021179166A JP7662489B2 (ja) 2018-05-31 2021-11-02 極めて均一性が高い加熱基板支持アセンブリ
JP2025001181A JP2025072361A (ja) 2018-05-31 2025-01-06 極めて均一性が高い加熱基板支持アセンブリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862678540P 2018-05-31 2018-05-31
US62/678,540 2018-05-31
PCT/US2019/030741 WO2019231614A1 (en) 2018-05-31 2019-05-03 Extreme uniformity heated substrate support assembly

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021179166A Division JP7662489B2 (ja) 2018-05-31 2021-11-02 極めて均一性が高い加熱基板支持アセンブリ

Publications (3)

Publication Number Publication Date
JP2021525454A JP2021525454A (ja) 2021-09-24
JP2021525454A5 JP2021525454A5 (enExample) 2021-12-16
JP7662339B2 true JP7662339B2 (ja) 2025-04-15

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JP2020565321A Active JP7662339B2 (ja) 2018-05-31 2019-05-03 極めて均一性が高い加熱基板支持アセンブリ
JP2021179166A Active JP7662489B2 (ja) 2018-05-31 2021-11-02 極めて均一性が高い加熱基板支持アセンブリ
JP2025001181A Withdrawn JP2025072361A (ja) 2018-05-31 2025-01-06 極めて均一性が高い加熱基板支持アセンブリ

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JP2021179166A Active JP7662489B2 (ja) 2018-05-31 2021-11-02 極めて均一性が高い加熱基板支持アセンブリ
JP2025001181A Withdrawn JP2025072361A (ja) 2018-05-31 2025-01-06 極めて均一性が高い加熱基板支持アセンブリ

Country Status (6)

Country Link
US (1) US12488967B2 (enExample)
JP (3) JP7662339B2 (enExample)
KR (3) KR102471635B1 (enExample)
CN (1) CN112088427A (enExample)
TW (1) TWI702685B (enExample)
WO (1) WO2019231614A1 (enExample)

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TWI896439B (zh) * 2020-03-30 2025-09-01 美商蘭姆研究公司 基板處理系統及基板支座溫度控制方法
TWI868119B (zh) * 2020-03-30 2025-01-01 美商蘭姆研究公司 基板處理系統及基板支座溫度控制方法
US11493551B2 (en) 2020-06-22 2022-11-08 Advantest Test Solutions, Inc. Integrated test cell using active thermal interposer (ATI) with parallel socket actuation
US11549981B2 (en) 2020-10-01 2023-01-10 Advantest Test Solutions, Inc. Thermal solution for massively parallel testing
US11808812B2 (en) 2020-11-02 2023-11-07 Advantest Test Solutions, Inc. Passive carrier-based device delivery for slot-based high-volume semiconductor test system
US11821913B2 (en) 2020-11-02 2023-11-21 Advantest Test Solutions, Inc. Shielded socket and carrier for high-volume test of semiconductor devices
US12320841B2 (en) 2020-11-19 2025-06-03 Advantest Test Solutions, Inc. Wafer scale active thermal interposer for device testing
US11567119B2 (en) 2020-12-04 2023-01-31 Advantest Test Solutions, Inc. Testing system including active thermal interposer device
US11573262B2 (en) 2020-12-31 2023-02-07 Advantest Test Solutions, Inc. Multi-input multi-zone thermal control for device testing
US12317378B2 (en) * 2021-02-04 2025-05-27 Applied Materials, Inc. Multi-zone heater control for wafer processing equipment
US11881423B2 (en) * 2021-02-09 2024-01-23 Applied Materials, Inc. Electrostatic chuck with metal bond
US11410869B1 (en) * 2021-02-22 2022-08-09 Applied Materials, Inc. Electrostatic chuck with differentiated ceramics
US20220282371A1 (en) * 2021-03-03 2022-09-08 Applied Materials, Inc. Electrostatic chuck with metal shaft
US11587640B2 (en) 2021-03-08 2023-02-21 Advantest Test Solutions, Inc. Carrier based high volume system level testing of devices with pop structures
US12112971B2 (en) * 2021-03-12 2024-10-08 Applied Materials, Inc. Multi-zone semiconductor substrate supports
TWI768786B (zh) * 2021-03-24 2022-06-21 天虹科技股份有限公司 可準確調整溫度的承載盤及應用該承載盤的薄膜沉積裝置
US20230011261A1 (en) * 2021-07-09 2023-01-12 Applied Materials, Inc. Multi-zone heater with minimum rf loss
US12094748B2 (en) 2021-08-18 2024-09-17 Applied Materials, Inc. Bipolar esc with balanced RF impedance
US20230060192A1 (en) * 2021-09-02 2023-03-02 Entegris, Inc. Methods and apparatus for processing an electrostatic chuck
US11656273B1 (en) 2021-11-05 2023-05-23 Advantest Test Solutions, Inc. High current device testing apparatus and systems
US20230420274A1 (en) * 2022-06-22 2023-12-28 Tel Manufacturing And Engineering Of America, Inc. Radiatively-Cooled Substrate Holder
TWI890199B (zh) * 2022-12-02 2025-07-11 日商鎧俠股份有限公司 半導體裝置冷卻裝置
US12400896B2 (en) * 2023-05-24 2025-08-26 Applied Materials, Inc. Fabrication of substrate support devices using inorganic dielectric bonding

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JP2015109139A (ja) 2013-12-03 2015-06-11 日本碍子株式会社 セラミックヒータ及びその製法
JP2016171185A (ja) 2015-03-12 2016-09-23 住友大阪セメント株式会社 静電チャック装置
JP2018511934A (ja) 2015-03-20 2018-04-26 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 基板処理チャックによる結露低減のためのガス流
JP2017152137A (ja) 2016-02-23 2017-08-31 日本碍子株式会社 静電チャックヒータ
JP2017208374A (ja) 2016-05-16 2017-11-24 東京エレクトロン株式会社 載置台システム、基板処理装置及び温度制御方法

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