TWI702685B - 極端均勻加熱基板支撐組件 - Google Patents
極端均勻加熱基板支撐組件 Download PDFInfo
- Publication number
- TWI702685B TWI702685B TW108117423A TW108117423A TWI702685B TW I702685 B TWI702685 B TW I702685B TW 108117423 A TW108117423 A TW 108117423A TW 108117423 A TW108117423 A TW 108117423A TW I702685 B TWI702685 B TW I702685B
- Authority
- TW
- Taiwan
- Prior art keywords
- chuck
- heater
- support assembly
- main body
- substrate support
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 139
- 238000001816 cooling Methods 0.000 claims abstract description 69
- 239000000919 ceramic Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000012790 adhesive layer Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 27
- 239000010410 layer Substances 0.000 claims description 25
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- 230000001070 adhesive effect Effects 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 20
- 238000010926 purge Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 21
- 238000000576 coating method Methods 0.000 description 15
- 239000012212 insulator Substances 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- 239000013529 heat transfer fluid Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 239000000203 mixture Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- 239000003989 dielectric material Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 210000002304 esc Anatomy 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
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- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920006260 polyaryletherketone Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Resistance Heating (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862678540P | 2018-05-31 | 2018-05-31 | |
| US62/678,540 | 2018-05-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202004980A TW202004980A (zh) | 2020-01-16 |
| TWI702685B true TWI702685B (zh) | 2020-08-21 |
Family
ID=68693589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108117423A TWI702685B (zh) | 2018-05-31 | 2019-05-21 | 極端均勻加熱基板支撐組件 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12488967B2 (enExample) |
| JP (3) | JP7662339B2 (enExample) |
| KR (3) | KR102471635B1 (enExample) |
| CN (1) | CN112088427A (enExample) |
| TW (1) | TWI702685B (enExample) |
| WO (1) | WO2019231614A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI896439B (zh) * | 2020-03-30 | 2025-09-01 | 美商蘭姆研究公司 | 基板處理系統及基板支座溫度控制方法 |
| TWI868119B (zh) * | 2020-03-30 | 2025-01-01 | 美商蘭姆研究公司 | 基板處理系統及基板支座溫度控制方法 |
| US11493551B2 (en) | 2020-06-22 | 2022-11-08 | Advantest Test Solutions, Inc. | Integrated test cell using active thermal interposer (ATI) with parallel socket actuation |
| US11549981B2 (en) | 2020-10-01 | 2023-01-10 | Advantest Test Solutions, Inc. | Thermal solution for massively parallel testing |
| US11808812B2 (en) | 2020-11-02 | 2023-11-07 | Advantest Test Solutions, Inc. | Passive carrier-based device delivery for slot-based high-volume semiconductor test system |
| US11821913B2 (en) | 2020-11-02 | 2023-11-21 | Advantest Test Solutions, Inc. | Shielded socket and carrier for high-volume test of semiconductor devices |
| US12320841B2 (en) | 2020-11-19 | 2025-06-03 | Advantest Test Solutions, Inc. | Wafer scale active thermal interposer for device testing |
| US11567119B2 (en) | 2020-12-04 | 2023-01-31 | Advantest Test Solutions, Inc. | Testing system including active thermal interposer device |
| US11573262B2 (en) | 2020-12-31 | 2023-02-07 | Advantest Test Solutions, Inc. | Multi-input multi-zone thermal control for device testing |
| US12317378B2 (en) * | 2021-02-04 | 2025-05-27 | Applied Materials, Inc. | Multi-zone heater control for wafer processing equipment |
| US11881423B2 (en) * | 2021-02-09 | 2024-01-23 | Applied Materials, Inc. | Electrostatic chuck with metal bond |
| US11410869B1 (en) * | 2021-02-22 | 2022-08-09 | Applied Materials, Inc. | Electrostatic chuck with differentiated ceramics |
| US20220282371A1 (en) * | 2021-03-03 | 2022-09-08 | Applied Materials, Inc. | Electrostatic chuck with metal shaft |
| US11587640B2 (en) | 2021-03-08 | 2023-02-21 | Advantest Test Solutions, Inc. | Carrier based high volume system level testing of devices with pop structures |
| US12112971B2 (en) * | 2021-03-12 | 2024-10-08 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| TWI768786B (zh) * | 2021-03-24 | 2022-06-21 | 天虹科技股份有限公司 | 可準確調整溫度的承載盤及應用該承載盤的薄膜沉積裝置 |
| US20230011261A1 (en) * | 2021-07-09 | 2023-01-12 | Applied Materials, Inc. | Multi-zone heater with minimum rf loss |
| US12094748B2 (en) | 2021-08-18 | 2024-09-17 | Applied Materials, Inc. | Bipolar esc with balanced RF impedance |
| US20230060192A1 (en) * | 2021-09-02 | 2023-03-02 | Entegris, Inc. | Methods and apparatus for processing an electrostatic chuck |
| US11656273B1 (en) | 2021-11-05 | 2023-05-23 | Advantest Test Solutions, Inc. | High current device testing apparatus and systems |
| US20230420274A1 (en) * | 2022-06-22 | 2023-12-28 | Tel Manufacturing And Engineering Of America, Inc. | Radiatively-Cooled Substrate Holder |
| TWI890199B (zh) * | 2022-12-02 | 2025-07-11 | 日商鎧俠股份有限公司 | 半導體裝置冷卻裝置 |
| US12400896B2 (en) * | 2023-05-24 | 2025-08-26 | Applied Materials, Inc. | Fabrication of substrate support devices using inorganic dielectric bonding |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170110358A1 (en) * | 2014-03-05 | 2017-04-20 | Applied Materials, Inc. | Pixelated capacitance controlled esc |
| US20170173934A1 (en) * | 2012-09-19 | 2017-06-22 | Applied Materials, Inc. | Methods for bonding substrates |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5801915A (en) * | 1994-01-31 | 1998-09-01 | Applied Materials, Inc. | Electrostatic chuck having a unidirectionally conducting coupler layer |
| US5888304A (en) | 1996-04-02 | 1999-03-30 | Applied Materials, Inc. | Heater with shadow ring and purge above wafer surface |
| US5730801A (en) * | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
| US6133557A (en) * | 1995-01-31 | 2000-10-17 | Kyocera Corporation | Wafer holding member |
| US6616767B2 (en) * | 1997-02-12 | 2003-09-09 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability |
| US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
| US6992876B1 (en) | 1999-07-08 | 2006-01-31 | Lam Research Corporation | Electrostatic chuck and its manufacturing method |
| JP2001244059A (ja) | 2000-02-28 | 2001-09-07 | Kyocera Corp | セラミックヒーター及びこれを用いたウエハ加熱装置 |
| US6534751B2 (en) * | 2000-02-28 | 2003-03-18 | Kyocera Corporation | Wafer heating apparatus and ceramic heater, and method for producing the same |
| US6967312B2 (en) * | 2000-07-19 | 2005-11-22 | Ibiden Co., Ltd. | Semiconductor manufacturing/testing ceramic heater, production method for the ceramic heater and production system for the ceramic heater |
| JP2002175867A (ja) * | 2000-12-08 | 2002-06-21 | Ibiden Co Ltd | セラミックヒータ |
| JP2003224180A (ja) | 2002-01-28 | 2003-08-08 | Kyocera Corp | ウエハ支持部材 |
| JP2005317749A (ja) * | 2004-04-28 | 2005-11-10 | Sumitomo Electric Ind Ltd | 半導体製造装置用保持体及びそれを搭載した半導体製造装置 |
| KR100587191B1 (ko) * | 2004-12-28 | 2006-06-08 | 주식회사 코미코 | 세라믹 정전척의 접합구조체 및 그 제조방법 |
| US8038796B2 (en) * | 2004-12-30 | 2011-10-18 | Lam Research Corporation | Apparatus for spatial and temporal control of temperature on a substrate |
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2019
- 2019-05-03 KR KR1020207033946A patent/KR102471635B1/ko active Active
- 2019-05-03 US US16/403,097 patent/US12488967B2/en active Active
- 2019-05-03 JP JP2020565321A patent/JP7662339B2/ja active Active
- 2019-05-03 WO PCT/US2019/030741 patent/WO2019231614A1/en not_active Ceased
- 2019-05-03 CN CN201980030055.8A patent/CN112088427A/zh active Pending
- 2019-05-03 KR KR1020257021454A patent/KR20250100800A/ko active Pending
- 2019-05-03 KR KR1020227041112A patent/KR20220163508A/ko not_active Ceased
- 2019-05-21 TW TW108117423A patent/TWI702685B/zh active
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2021
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2025
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2022020732A (ja) | 2022-02-01 |
| WO2019231614A1 (en) | 2019-12-05 |
| JP7662489B2 (ja) | 2025-04-15 |
| CN112088427A (zh) | 2020-12-15 |
| TW202004980A (zh) | 2020-01-16 |
| US12488967B2 (en) | 2025-12-02 |
| JP2021525454A (ja) | 2021-09-24 |
| US20190371577A1 (en) | 2019-12-05 |
| KR20250100800A (ko) | 2025-07-03 |
| KR20220163508A (ko) | 2022-12-09 |
| JP2025072361A (ja) | 2025-05-09 |
| KR20200136495A (ko) | 2020-12-07 |
| KR102471635B1 (ko) | 2022-11-29 |
| JP7662339B2 (ja) | 2025-04-15 |
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