JP7660285B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP7660285B2
JP7660285B2 JP2021573007A JP2021573007A JP7660285B2 JP 7660285 B2 JP7660285 B2 JP 7660285B2 JP 2021573007 A JP2021573007 A JP 2021573007A JP 2021573007 A JP2021573007 A JP 2021573007A JP 7660285 B2 JP7660285 B2 JP 7660285B2
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Japan
Prior art keywords
electrode
photoelectric conversion
pixel
pixel electrodes
imaging device
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JP2021573007A
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Japanese (ja)
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JPWO2021149413A1 (https=
JPWO2021149413A5 (ja
Inventor
貴裕 小柳
優子 留河
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Solid State Image Pick-Up Elements (AREA)
JP2021573007A 2020-01-23 2020-12-17 撮像装置 Active JP7660285B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020009139 2020-01-23
JP2020009139 2020-01-23
PCT/JP2020/047086 WO2021149413A1 (ja) 2020-01-23 2020-12-17 撮像装置

Publications (3)

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JPWO2021149413A1 JPWO2021149413A1 (https=) 2021-07-29
JPWO2021149413A5 JPWO2021149413A5 (ja) 2022-09-14
JP7660285B2 true JP7660285B2 (ja) 2025-04-11

Family

ID=76992187

Family Applications (1)

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JP2021573007A Active JP7660285B2 (ja) 2020-01-23 2020-12-17 撮像装置

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US (1) US11895854B2 (https=)
JP (1) JP7660285B2 (https=)
WO (1) WO2021149413A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022102342A1 (https=) * 2020-11-13 2022-05-19
TWI783805B (zh) * 2021-12-01 2022-11-11 天光材料科技股份有限公司 光電半導體之結構
WO2024236862A1 (ja) * 2023-05-15 2024-11-21 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007336282A (ja) 2006-06-15 2007-12-27 Fujifilm Corp 光電変換膜積層型カラー固体撮像素子
JP2011100894A (ja) 2009-11-06 2011-05-19 Fujifilm Corp 光電変換膜積層型撮像素子及びその製造方法
JP2016033972A (ja) 2014-07-31 2016-03-10 キヤノン株式会社 撮像装置及び撮像システム
JP2016033979A (ja) 2014-07-31 2016-03-10 キヤノン株式会社 撮像装置、撮像システムおよび撮像装置の製造方法
WO2017061176A1 (ja) 2015-10-06 2017-04-13 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223971A (ja) * 1982-06-23 1983-12-26 Hitachi Ltd 固体撮像素子
JPS62122268A (ja) * 1985-11-22 1987-06-03 Fuji Photo Film Co Ltd 固体撮像素子
JP4183784B2 (ja) * 1997-09-09 2008-11-19 株式会社半導体エネルギー研究所 液晶パネルの作製方法
JP5533046B2 (ja) 2010-03-05 2014-06-25 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
JP5946132B2 (ja) 2012-09-25 2016-07-05 富士フイルム株式会社 固体撮像素子の製造方法
JP6598436B2 (ja) * 2014-08-08 2019-10-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP6920652B2 (ja) 2017-02-03 2021-08-18 パナソニックＩｐマネジメント株式会社 撮像装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007336282A (ja) 2006-06-15 2007-12-27 Fujifilm Corp 光電変換膜積層型カラー固体撮像素子
JP2011100894A (ja) 2009-11-06 2011-05-19 Fujifilm Corp 光電変換膜積層型撮像素子及びその製造方法
JP2016033972A (ja) 2014-07-31 2016-03-10 キヤノン株式会社 撮像装置及び撮像システム
JP2016033979A (ja) 2014-07-31 2016-03-10 キヤノン株式会社 撮像装置、撮像システムおよび撮像装置の製造方法
WO2017061176A1 (ja) 2015-10-06 2017-04-13 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法

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JPWO2021149413A1 (https=) 2021-07-29
WO2021149413A1 (ja) 2021-07-29
US11895854B2 (en) 2024-02-06
US20220336534A1 (en) 2022-10-20

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