JP7637237B2 - 半導体デバイスの製造方法および製造装置 - Google Patents

半導体デバイスの製造方法および製造装置 Download PDF

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JP7637237B2
JP7637237B2 JP2023529812A JP2023529812A JP7637237B2 JP 7637237 B2 JP7637237 B2 JP 7637237B2 JP 2023529812 A JP2023529812 A JP 2023529812A JP 2023529812 A JP2023529812 A JP 2023529812A JP 7637237 B2 JP7637237 B2 JP 7637237B2
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賢太郎 村川
剛 神川
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Kyocera Corp
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    • H—ELECTRICITY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • H10P14/272—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using mask materials other than SiO2 or SiN
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  • Chemical & Material Sciences (AREA)
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  • Inorganic Chemistry (AREA)
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JP2023529812A 2021-06-21 2022-06-08 半導体デバイスの製造方法および製造装置 Active JP7637237B2 (ja)

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PCT/JP2022/023088 WO2022270309A1 (ja) 2021-06-21 2022-06-08 半導体デバイスの製造方法および製造装置、半導体デバイスならびに電子機器

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231734A (ja) 2001-02-06 2002-08-16 Oki Data Corp 基板ユニット、半導体素子、半導体素子の実装方法及びその製造方法
JP2005244172A (ja) 2004-01-30 2005-09-08 Sumitomo Electric Ind Ltd 半導体素子の製造方法
JP2006273716A (ja) 1997-10-30 2006-10-12 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板の製造方法
JP2008226871A (ja) 2007-03-08 2008-09-25 Nec Corp 半導体装置及びその製造方法
JP2012114263A (ja) 2010-11-25 2012-06-14 Pawdec:Kk 半導体素子およびその製造方法
JP2019134101A (ja) 2018-01-31 2019-08-08 京セラ株式会社 半導体素子の製造方法
JP2020202351A (ja) 2019-06-13 2020-12-17 日亜化学工業株式会社 発光素子の製造方法
WO2021221055A1 (ja) 2020-04-28 2021-11-04 京セラ株式会社 半導体素子の製造方法
JP6986645B1 (ja) 2020-12-29 2021-12-22 京セラ株式会社 半導体基板、半導体デバイス、電子機器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218730A (ja) * 1985-07-17 1987-01-27 Nec Corp 半導体装置の製造方法
JP4264992B2 (ja) 1997-05-28 2009-05-20 ソニー株式会社 半導体装置の製造方法
JPWO2005106977A1 (ja) * 2004-04-27 2008-03-21 松下電器産業株式会社 窒化物半導体素子およびその製造方法
US12087577B2 (en) * 2018-05-17 2024-09-10 The Regents Of The University Of California Method for dividing a bar of one or more devices

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006273716A (ja) 1997-10-30 2006-10-12 Sumitomo Electric Ind Ltd ＧａＮ単結晶基板の製造方法
JP2002231734A (ja) 2001-02-06 2002-08-16 Oki Data Corp 基板ユニット、半導体素子、半導体素子の実装方法及びその製造方法
JP2005244172A (ja) 2004-01-30 2005-09-08 Sumitomo Electric Ind Ltd 半導体素子の製造方法
JP2008226871A (ja) 2007-03-08 2008-09-25 Nec Corp 半導体装置及びその製造方法
JP2012114263A (ja) 2010-11-25 2012-06-14 Pawdec:Kk 半導体素子およびその製造方法
JP2019134101A (ja) 2018-01-31 2019-08-08 京セラ株式会社 半導体素子の製造方法
JP2020202351A (ja) 2019-06-13 2020-12-17 日亜化学工業株式会社 発光素子の製造方法
WO2021221055A1 (ja) 2020-04-28 2021-11-04 京セラ株式会社 半導体素子の製造方法
JP6986645B1 (ja) 2020-12-29 2021-12-22 京セラ株式会社 半導体基板、半導体デバイス、電子機器

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EP4362115A1 (en) 2024-05-01
US20240313151A1 (en) 2024-09-19
WO2022270309A1 (ja) 2022-12-29

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