JP2020202351A - 発光素子の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 258
- 239000000758 substrate Substances 0.000 claims abstract description 156
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 154
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 154
- 239000010703 silicon Substances 0.000 claims abstract description 154
- 239000011347 resin Substances 0.000 claims abstract description 106
- 229920005989 resin Polymers 0.000 claims abstract description 106
- 238000000034 method Methods 0.000 claims description 47
- 230000000873 masking effect Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 abstract description 41
- 238000005530 etching Methods 0.000 description 24
- 238000001020 plasma etching Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Abstract
Description
Claims (7)
- シリコン基板と、前記シリコン基板上に、n型半導体層、発光層、およびp型半導体層が順に形成された半導体積層体と、を有するウェーハを準備する工程と、
前記p型半導体層上にp側電極を形成する工程と、
前記半導体積層体の側面に絶縁膜を形成する工程と、
前記絶縁膜を形成した後、前記シリコン基板と前記絶縁膜とを覆う樹脂層を形成する工程と、
前記樹脂層を形成した後、前記シリコン基板を選択的に除去することで、前記n型半導体層上に前記シリコン基板の一部を残しつつ、前記絶縁膜および前記樹脂層を前記シリコン基板から露出させる工程と、
前記シリコン基板の前記一部をマスクにして前記シリコン基板から露出させた前記絶縁膜を除去し、前記n型半導体層の側面および前記樹脂層の側面を露出させる工程と、
前記n型半導体層の前記側面と前記樹脂層の前記側面との間に位置し、露出させた前記n型半導体層の前記側面に接続されるn側電極を形成する工程と、
前記n側電極を形成した後、前記シリコン基板の前記一部を除去し、前記n型半導体層を露出させる工程と、
を備えた発光素子の製造方法。 - シリコン基板と、前記シリコン基板上に、n型半導体層、発光層、およびp型半導体層が順に形成された半導体積層体と、を有するウェーハを準備する工程と、
前記半導体積層体を複数の素子部に分離する工程と、
前記p型半導体層上にp側電極を形成する工程と、
前記複数の素子部のうち隣り合う前記素子部それぞれの前記半導体積層体の側面に絶縁膜を形成する工程と、
前記絶縁膜を形成した後、前記シリコン基板と前記絶縁膜とを覆うとともに、隣り合う前記素子部の間に位置する樹脂層を形成する工程と、
前記樹脂層を形成した後、前記シリコン基板を選択的に除去することで、前記n型半導体層上に前記シリコン基板の一部を残しつつ、前記絶縁膜および前記樹脂層を前記シリコン基板から露出させる工程と、
隣り合う前記素子部それぞれの前記半導体積層体の前記側面に設けられた前記絶縁膜を除去し、前記n型半導体層の側面および前記樹脂層の側面を露出させる工程と、
隣り合う前記素子部の間の前記樹脂層の上面に形成されるとともに、前記n型半導体層の前記側面と前記樹脂層の前記側面との間に位置し、隣り合う前記素子部それぞれの前記n型半導体層の前記側面を介して隣り合う前記素子部を接続するn側電極を形成する工程と、
前記n側電極を形成した後、前記シリコン基板の前記一部を除去し、前記n型半導体層を露出させる工程と、
を備えた発光素子の製造方法。 - シリコン基板と、前記シリコン基板上に、n型半導体層、発光層、およびp型半導体層が順に形成された半導体積層体と、を有するウェーハを準備する工程と、
前記半導体積層体の前記p型半導体層および前記発光層を除去し、前記n型半導体層の一部を前記p型半導体層および前記発光層から露出させ、前記p型半導体層および前記発光層を含むメサ部を形成する工程と、
前記メサ部の前記p型半導体層上にp側電極を形成する工程と、
前記メサ部の側面に第1絶縁膜を形成する工程と、
前記第1絶縁膜を形成した後、前記n型半導体層の前記一部を除去し、前記シリコン基板を前記n型半導体層から露出させることで前記n型半導体層の側面を形成する工程と、
前記n型半導体層の前記側面に、第1n側電極を形成する工程と、
前記第1n側電極の側面に、第2絶縁膜を形成する工程と、
前記第2絶縁膜を形成した後、前記シリコン基板と前記第2絶縁膜とを覆う樹脂層を形成する工程と、
前記樹脂層を形成した後、前記シリコン基板を選択的に除去することで、前記n型半導体層上に前記シリコン基板の一部を残しつつ、前記第2絶縁膜および前記樹脂層を前記シリコン基板から露出させる工程と、
前記シリコン基板の前記一部をマスクにして前記シリコン基板から露出させた前記第2絶縁膜を除去し、前記第1n側電極の前記側面および前記樹脂層の側面を露出させる工程と、
前記第1n側電極の前記側面と前記樹脂層の前記側面との間に位置し、露出した前記第1n側電極の前記側面に接続される、第2n側電極を形成する工程と、
前記第2n側電極を形成した後、前記シリコン基板の前記一部を除去し、前記n型半導体層を露出させる工程と、
を備えた発光素子の製造方法。 - シリコン基板と、前記シリコン基板上に、n型半導体層、発光層、およびp型半導体層が順に形成された半導体積層体と、を有するウェーハを準備する工程と、
前記半導体積層体の前記p型半導体層および前記発光層を除去し、前記n型半導体層の一部を前記p型半導体層および前記発光層から露出させ、前記p型半導体層および前記発光層を含む複数のメサ部を形成する工程と、
前記複数のメサ部それぞれの前記p型半導体層上にp側電極を形成する工程と、
前記複数のメサ部のうち隣り合う前記メサ部の側面それぞれに第1絶縁膜を形成する工程と、
前記半導体積層体を前記メサ部を含む複数の素子部に分離し、隣り合う前記メサ部の間に位置する前記n型半導体層の前記一部を除去することで、隣り合う前記素子部それぞれの前記n型半導体層の側面を形成する工程と、
隣り合う前記素子部の前記n型半導体層の前記側面それぞれに第1n側電極を形成する工程と、
隣り合う前記素子部それぞれに設けられた前記第1n側電極の側面に第2絶縁膜を形成する工程と、
前記第2絶縁膜を形成した後、前記シリコン基板と前記第2絶縁膜とを覆い、隣り合う前記素子部の間に位置する樹脂層を形成する工程と、
前記樹脂層を形成した後、前記シリコン基板を選択的に除去することで、前記複数の素子部の前記n型半導体層上のそれぞれに前記シリコン基板の一部を残しつつ、前記第2絶縁膜および前記樹脂層を前記シリコン基板から露出させる工程と、
前記シリコン基板の前記一部をマスクにして前記シリコン基板から露出させた隣り合う前記素子部それぞれに設けられた前記第2絶縁膜を除去し、前記第1n側電極の側面および前記樹脂層の側面を露出させる工程と、
前記第1n側電極の前記側面と前記樹脂層の前記側面との間に位置し、隣り合う前記素子部の間の前記樹脂層の上面に形成されるとともに、隣り合う前記素子部それぞれの前記第1n側電極の前記側面を介して隣り合う前記素子部を接続する、第2n側電極を形成する工程と、
前記第2n側電極を形成した後、前記シリコン基板の前記一部を除去し、前記n型半導体層を露出させる工程と、
を備えた発光素子の製造方法。 - 前記絶縁膜の膜厚は、0.8μm以上6μm以下である請求項1又は2に記載の発光素子の製造方法。
- 前記第2絶縁膜の膜厚は、0.8μm以上6μm以下である請求項3又は4に記載の発光素子の製造方法。
- 前記n型半導体層の前記側面は、前記n型半導体層から前記p型半導体層に向かう第1方向に対して傾斜している請求項1〜6のいずれか1つに記載の発光素子の製造方法。
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WO2022270309A1 (ja) * | 2021-06-21 | 2022-12-29 | 京セラ株式会社 | 半導体デバイスの製造方法および製造装置、半導体デバイスならびに電子機器 |
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US11791440B2 (en) | 2023-10-17 |
US20200395509A1 (en) | 2020-12-17 |
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