JP7624980B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7624980B2
JP7624980B2 JP2022522080A JP2022522080A JP7624980B2 JP 7624980 B2 JP7624980 B2 JP 7624980B2 JP 2022522080 A JP2022522080 A JP 2022522080A JP 2022522080 A JP2022522080 A JP 2022522080A JP 7624980 B2 JP7624980 B2 JP 7624980B2
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oxide
insulator
conductor
transistor
circuit
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Japanese (ja)
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JPWO2021229374A1 (https=
JPWO2021229374A5 (https=
Inventor
舜平 山崎
隆之 池田
達也 大貫
裕人 八窪
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2025008562A priority Critical patent/JP7756818B2/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operations
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1415—Saving, restoring, recovering or retrying at system level
    • G06F11/1441—Resetting or repowering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/30—Authentication, i.e. establishing the identity or authorisation of security principals
    • G06F21/31—User authentication
    • G06F21/34—User authentication involving the use of external additional devices, e.g. dongles or smart cards
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G06F7/5443—Sum of products
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q50/00—Information and communication technology [ICT] specially adapted for implementation of business processes of specific business sectors, e.g. utilities or tourism
    • G06Q50/10—Services
    • G06Q50/26—Government or public services
    • G06Q50/265—Personal security, identity or safety
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/481—Encapsulations, e.g. protective coatings characterised by their materials comprising semiconductor materials
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16H—HEALTHCARE INFORMATICS, i.e. INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR THE HANDLING OR PROCESSING OF MEDICAL OR HEALTHCARE DATA
    • G16H40/00—ICT specially adapted for the management or administration of healthcare resources or facilities; ICT specially adapted for the management or operation of medical equipment or devices
    • G16H40/60—ICT specially adapted for the management or administration of healthcare resources or facilities; ICT specially adapted for the management or operation of medical equipment or devices for the operation of medical equipment or devices
    • G16H40/67—ICT specially adapted for the management or administration of healthcare resources or facilities; ICT specially adapted for the management or operation of medical equipment or devices for the operation of medical equipment or devices for remote operation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Security & Cryptography (AREA)
  • General Engineering & Computer Science (AREA)
  • Business, Economics & Management (AREA)
  • Tourism & Hospitality (AREA)
  • Computer Hardware Design (AREA)
  • Software Systems (AREA)
  • Mathematical Analysis (AREA)
  • Computational Mathematics (AREA)
  • Computing Systems (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Economics (AREA)
  • Health & Medical Sciences (AREA)
  • Strategic Management (AREA)
  • Primary Health Care (AREA)
  • Marketing (AREA)
  • Human Resources & Organizations (AREA)
  • General Health & Medical Sciences (AREA)
  • General Business, Economics & Management (AREA)
  • Educational Administration (AREA)
  • Development Economics (AREA)
  • Quality & Reliability (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2022522080A 2020-05-15 2021-05-06 半導体装置 Active JP7624980B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2025008562A JP7756818B2 (ja) 2020-05-15 2025-01-21 半導体装置
JP2025169402A JP2025188138A (ja) 2020-05-15 2025-10-07 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020086266 2020-05-15
JP2020086266 2020-05-15
PCT/IB2021/053820 WO2021229374A1 (ja) 2020-05-15 2021-05-06 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025008562A Division JP7756818B2 (ja) 2020-05-15 2025-01-21 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2021229374A1 JPWO2021229374A1 (https=) 2021-11-18
JPWO2021229374A5 JPWO2021229374A5 (https=) 2024-05-01
JP7624980B2 true JP7624980B2 (ja) 2025-01-31

Family

ID=78525457

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2022522080A Active JP7624980B2 (ja) 2020-05-15 2021-05-06 半導体装置
JP2025008562A Active JP7756818B2 (ja) 2020-05-15 2025-01-21 半導体装置
JP2025169402A Pending JP2025188138A (ja) 2020-05-15 2025-10-07 半導体装置

Family Applications After (2)

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JP2025008562A Active JP7756818B2 (ja) 2020-05-15 2025-01-21 半導体装置
JP2025169402A Pending JP2025188138A (ja) 2020-05-15 2025-10-07 半導体装置

Country Status (6)

Country Link
US (1) US12581693B2 (https=)
JP (3) JP7624980B2 (https=)
KR (1) KR20230011931A (https=)
CN (1) CN115606008A (https=)
DE (1) DE112021002788T5 (https=)
WO (1) WO2021229374A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008212652A (ja) 2007-02-09 2008-09-18 Semiconductor Energy Lab Co Ltd 補助装置
JP2016001729A (ja) 2014-05-22 2016-01-07 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
JP2018129046A (ja) 2017-02-08 2018-08-16 株式会社半導体エネルギー研究所 Ａｉシステム
JP2019046199A (ja) 2017-09-01 2019-03-22 株式会社半導体エネルギー研究所 プロセッサ、および電子機器

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CN101180641B (zh) 2005-01-31 2012-02-08 株式会社半导体能源研究所 半导体器件及其制造方法
US7732241B2 (en) 2005-11-30 2010-06-08 Semiconductor Energy Labortory Co., Ltd. Microstructure and manufacturing method thereof and microelectromechanical system
DE102006008258B4 (de) 2006-02-22 2012-01-26 Siemens Ag System zur Identifikation eines medizinischen Implantats
US20080076974A1 (en) 2006-04-28 2008-03-27 Semiconductor Energy Laboratory Co., Ltd. Biological information detection sensor device
JP2008043302A (ja) 2006-08-21 2008-02-28 Hitachi Ltd 生体植込み用ｒｆｉｄタグ及びその挿入冶具体
JP5147345B2 (ja) 2006-09-29 2013-02-20 株式会社半導体エネルギー研究所 半導体装置
US7839124B2 (en) 2006-09-29 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Wireless power storage device comprising battery, semiconductor device including battery, and method for operating the wireless power storage device
JP2008113632A (ja) 2006-11-07 2008-05-22 Hitachi Ltd 生体植込用ｒｆｉｄタグおよびその挿入冶具体
WO2008123262A1 (en) 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Individual management system
US7777631B2 (en) 2007-04-29 2010-08-17 James Neil Rodgers Body chip
US20120109255A1 (en) 2010-10-27 2012-05-03 National Tsing Hua University Retina Stimulation Apparatus and Manufacturing Method Thereof
US8954156B2 (en) 2010-10-27 2015-02-10 National Tsing Hua University Methods and apparatuses for configuring artificial retina devices
EP2632388B1 (en) 2010-10-27 2020-03-25 Iridium Medical Technology Co., Ltd Flexible artificial retina devices
US8530265B2 (en) 2010-10-27 2013-09-10 National Tsing Hua University Method of fabricating flexible artificial retina devices
US9114004B2 (en) 2010-10-27 2015-08-25 Iridium Medical Technology Co, Ltd. Flexible artificial retina devices
US8613135B2 (en) 2011-05-06 2013-12-24 National Tsing Hua University Method for non-planar chip assembly
KR101772255B1 (ko) 2011-05-06 2017-08-28 이리듐 메디칼 테크놀로지 컴퍼니 리미티드 비평면 집적 회로 디바이스
US9155881B2 (en) 2011-05-06 2015-10-13 Iridium Medical Technology Co, Ltd. Non-planar chip assembly
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JP2016111677A (ja) 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 半導体装置、無線センサ、及び電子機器
US10770729B2 (en) 2015-01-09 2020-09-08 Semiconductor Energy Laboratory Co., Ltd. Electrode, power storage device, and electronic equipment
WO2018073708A1 (en) * 2016-10-20 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Storage device, driving method thereof, semiconductor device, electronic component, and electronic device
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JP2019079415A (ja) 2017-10-26 2019-05-23 京セラ株式会社 電子機器、制御装置、制御プログラム及び電子機器の動作方法
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008212652A (ja) 2007-02-09 2008-09-18 Semiconductor Energy Lab Co Ltd 補助装置
JP2016001729A (ja) 2014-05-22 2016-01-07 株式会社半導体エネルギー研究所 半導体装置、健康管理システム
JP2018129046A (ja) 2017-02-08 2018-08-16 株式会社半導体エネルギー研究所 Ａｉシステム
JP2019046199A (ja) 2017-09-01 2019-03-22 株式会社半導体エネルギー研究所 プロセッサ、および電子機器

Also Published As

Publication number Publication date
DE112021002788T5 (de) 2023-04-27
JP2025188138A (ja) 2025-12-25
KR20230011931A (ko) 2023-01-25
CN115606008A (zh) 2023-01-13
WO2021229374A1 (ja) 2021-11-18
JPWO2021229374A1 (https=) 2021-11-18
JP7756818B2 (ja) 2025-10-20
US20230178654A1 (en) 2023-06-08
JP2025066126A (ja) 2025-04-22
US12581693B2 (en) 2026-03-17

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