CN115606008A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN115606008A
CN115606008A CN202180035657.XA CN202180035657A CN115606008A CN 115606008 A CN115606008 A CN 115606008A CN 202180035657 A CN202180035657 A CN 202180035657A CN 115606008 A CN115606008 A CN 115606008A
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CN
China
Prior art keywords
insulator
conductor
oxide
transistor
addition
Prior art date
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Pending
Application number
CN202180035657.XA
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English (en)
Chinese (zh)
Inventor
山崎舜平
池田隆之
大贯达也
八洼裕人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN115606008A publication Critical patent/CN115606008A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operations
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1415—Saving, restoring, recovering or retrying at system level
    • G06F11/1441—Resetting or repowering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/30—Authentication, i.e. establishing the identity or authorisation of security principals
    • G06F21/31—User authentication
    • G06F21/34—User authentication involving the use of external additional devices, e.g. dongles or smart cards
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G06F7/5443—Sum of products
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q50/00—Information and communication technology [ICT] specially adapted for implementation of business processes of specific business sectors, e.g. utilities or tourism
    • G06Q50/10—Services
    • G06Q50/26—Government or public services
    • G06Q50/265—Personal security, identity or safety
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/481—Encapsulations, e.g. protective coatings characterised by their materials comprising semiconductor materials
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16H—HEALTHCARE INFORMATICS, i.e. INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR THE HANDLING OR PROCESSING OF MEDICAL OR HEALTHCARE DATA
    • G16H40/00—ICT specially adapted for the management or administration of healthcare resources or facilities; ICT specially adapted for the management or operation of medical equipment or devices
    • G16H40/60—ICT specially adapted for the management or administration of healthcare resources or facilities; ICT specially adapted for the management or operation of medical equipment or devices for the operation of medical equipment or devices
    • G16H40/67—ICT specially adapted for the management or administration of healthcare resources or facilities; ICT specially adapted for the management or operation of medical equipment or devices for the operation of medical equipment or devices for remote operation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Security & Cryptography (AREA)
  • General Engineering & Computer Science (AREA)
  • Business, Economics & Management (AREA)
  • Tourism & Hospitality (AREA)
  • Computer Hardware Design (AREA)
  • Software Systems (AREA)
  • Mathematical Analysis (AREA)
  • Computational Mathematics (AREA)
  • Computing Systems (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Economics (AREA)
  • Health & Medical Sciences (AREA)
  • Strategic Management (AREA)
  • Primary Health Care (AREA)
  • Marketing (AREA)
  • Human Resources & Organizations (AREA)
  • General Health & Medical Sciences (AREA)
  • General Business, Economics & Management (AREA)
  • Educational Administration (AREA)
  • Development Economics (AREA)
  • Quality & Reliability (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
CN202180035657.XA 2020-05-15 2021-05-06 半导体装置 Pending CN115606008A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020086266 2020-05-15
JP2020-086266 2020-05-15
PCT/IB2021/053820 WO2021229374A1 (ja) 2020-05-15 2021-05-06 半導体装置

Publications (1)

Publication Number Publication Date
CN115606008A true CN115606008A (zh) 2023-01-13

Family

ID=78525457

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180035657.XA Pending CN115606008A (zh) 2020-05-15 2021-05-06 半导体装置

Country Status (6)

Country Link
US (1) US12581693B2 (https=)
JP (3) JP7624980B2 (https=)
KR (1) KR20230011931A (https=)
CN (1) CN115606008A (https=)
DE (1) DE112021002788T5 (https=)
WO (1) WO2021229374A1 (https=)

Family Cites Families (40)

* Cited by examiner, † Cited by third party
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US20080076974A1 (en) 2006-04-28 2008-03-27 Semiconductor Energy Laboratory Co., Ltd. Biological information detection sensor device
JP2008043302A (ja) 2006-08-21 2008-02-28 Hitachi Ltd 生体植込み用ｒｆｉｄタグ及びその挿入冶具体
JP5147345B2 (ja) 2006-09-29 2013-02-20 株式会社半導体エネルギー研究所 半導体装置
US7839124B2 (en) 2006-09-29 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Wireless power storage device comprising battery, semiconductor device including battery, and method for operating the wireless power storage device
JP2008113632A (ja) 2006-11-07 2008-05-22 Hitachi Ltd 生体植込用ｒｆｉｄタグおよびその挿入冶具体
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US20120109255A1 (en) 2010-10-27 2012-05-03 National Tsing Hua University Retina Stimulation Apparatus and Manufacturing Method Thereof
US8954156B2 (en) 2010-10-27 2015-02-10 National Tsing Hua University Methods and apparatuses for configuring artificial retina devices
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US9114004B2 (en) 2010-10-27 2015-08-25 Iridium Medical Technology Co, Ltd. Flexible artificial retina devices
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JP2016111677A (ja) 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 半導体装置、無線センサ、及び電子機器
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JP2019079415A (ja) 2017-10-26 2019-05-23 京セラ株式会社 電子機器、制御装置、制御プログラム及び電子機器の動作方法
JP7110223B2 (ja) 2017-11-02 2022-08-01 株式会社半導体エネルギー研究所 給電装置およびその動作方法
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CN112085132B (zh) 2020-08-27 2025-08-22 浙江曜泰数智科技有限公司 一种用于获取动物体温的可植入rfid标签装置
CN212365034U (zh) 2020-08-27 2021-01-15 金华市金东区大堰河农牧场 一种用于检测温度的可植入rfid标签装置
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Also Published As

Publication number Publication date
DE112021002788T5 (de) 2023-04-27
JP7624980B2 (ja) 2025-01-31
JP2025188138A (ja) 2025-12-25
KR20230011931A (ko) 2023-01-25
WO2021229374A1 (ja) 2021-11-18
JPWO2021229374A1 (https=) 2021-11-18
JP7756818B2 (ja) 2025-10-20
US20230178654A1 (en) 2023-06-08
JP2025066126A (ja) 2025-04-22
US12581693B2 (en) 2026-03-17

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